Uniformity and Retention Improvement of TaOx-Based Conductive Bridge Random Access Memory by CuSiN Interfacial Layer Engineering

2017 ◽  
Vol 38 (9) ◽  
pp. 1232-1235 ◽  
Author(s):  
Tiancheng Gong ◽  
Qing Luo ◽  
Xiaoxin Xu ◽  
Peng Yuan ◽  
Haili Ma ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Conductive Bridge

scholarly journals Publisher's Note: “Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure” [Appl. Phys. Lett. 105, 193501 (2014)]

2015 ◽  
Vol 106 (15) ◽  
pp. 159901
Author(s):  
Meiyun Zhang ◽  
Shibing Long ◽  
Guoming Wang ◽  
Xiaoxin Xu ◽  
Yang Li ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Access Memory ◽  
Conductive Bridge

Superior Retention of Low-Resistance State in Conductive Bridge Random Access Memory With Single Filament Formation

2015 ◽  
Vol 36 (2) ◽  
pp. 129-131 ◽  
Author(s):  
Xiaoxin Xu ◽  
Hangbing Lv ◽  
Hongtao Liu ◽  
Tiancheng Gong ◽  
Guoming Wang ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Filament Formation ◽  
Access Memory ◽  
Single Filament ◽  
Low Resistance ◽  
Conductive Bridge ◽  
Resistance State

An electroforming-free mechanism for Cu2O solid-electrolyte-based conductive-bridge random access memory (CBRAM)

2020 ◽  
Vol 8 (24) ◽  
pp. 8125-8134
Author(s):  
Ki-Hyun Kwon ◽  
Dong-Won Kim ◽  
Hea-Jee Kim ◽  
Soo-Min Jin ◽  
Dae-Seong Woo ◽  
...  
Keyword(s):  
Solid Electrolyte ◽  
Annealing Temperature ◽  
Random Access ◽  
Random Access Memory ◽  
Ex Situ ◽  
Access Memory ◽  
Conductive Bridge

In a CuxO solid-electrolyte-based CBRAM cell using an Ag top electrode, electroforming-free and electro-reset processes could be achieved at a specific ex situ annealing temperature of the solid electrolyte.

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