scholarly journals The Impact of Ti/Al Contacts on AlGaN/GaN HEMT Vertical Leakage and Breakdown

2018 ◽  
Vol 39 (10) ◽  
pp. 1580-1583
Author(s):  
Ben Rackauskas ◽  
Michael J. Uren ◽  
Steve Stoffels ◽  
Ming Zhao ◽  
Benoit Bakeroot ◽  
...  
Keyword(s):  
Gan Hemt ◽  
Vertical Leakage ◽  
The Impact

The Impact of Gate Recess on the H₂ Detection Properties of Pt-AlGaN/GaN HEMT Sensors

2020 ◽  
Vol 20 (16) ◽  
pp. 8947-8955
Author(s):  
Robert Sokolovskij ◽  
Jian Zhang ◽  
Hongze Zheng ◽  
Wenmao Li ◽  
Yang Jiang ◽  
...  
Keyword(s):  
Gan Hemt ◽  
Gate Recess ◽  
The Impact

scholarly journals High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN

Energies ◽  
2021 ◽  
Vol 14 (19) ◽  
pp. 6098
Author(s):  
Gwen Rolland ◽  
Christophe Rodriguez ◽  
Guillaume Gommé ◽  
Abderrahim Boucherif ◽  
Ahmed Chakroun ◽  
...  
Keyword(s):  
High Electron Mobility Transistor ◽  
Device Performance ◽  
High Electron ◽  
Chemical Beam Epitaxy ◽  
High Electron Mobility ◽  
Device Failure ◽  
Gan Hemt ◽  
Silvaco Atlas ◽  
P Type ◽  
The Impact

In this paper is presented a Normally-OFF GaN HEMT (High Electron Mobility Transistor) device using p-doped GaN barrier layer regrown by CBE (Chemical Beam Epitaxy). The impact of the p doping on the device performance is investigated using TCAD simulator (Silvaco/Atlas). With 4E17 cm−3 p doping, a Vth of 1.5 V is achieved. Four terminal breakdowns of the fabricated device are investigated, and the origin of the device failure is identified.

The Impact of Long-Term Memory Effects on the Linearizability of GaN HEMT-Based Power Amplifiers

2021 ◽  
pp. 1-1
Author(s):  
Joao L. Gomes ◽  
Luis C. Nunes ◽  
Filipe M. Barradas ◽  
Adam Cooman ◽  
Aryan E. F. de Jong ◽  
...  
Keyword(s):  
Power Amplifiers ◽  
Memory Effects ◽  
Long Term Memory ◽  
Term Memory ◽  
Gan Hemt ◽  
The Impact

AlNGaN HEMT T-Gate Optimal Design

2013 ◽  
Vol 347-350 ◽  
pp. 1790-1792
Author(s):  
Xiao Wei Zhang ◽  
Ke Jin Jia ◽  
Yuan Gang Wang ◽  
Zhi Hong Feng ◽  
Zheng Ping Zhao
Keyword(s):  
Optimal Design ◽  
High Frequency ◽  
Size Range ◽  
Gate Length ◽  
Maximum Oscillation Frequency ◽  
Gan Hemt ◽  
The Cost ◽  
Gate Resistance ◽  
The Impact ◽  
Gate Size

The GaN HEMT is widely used in high-frequency aspects, use the T-gate to reduce gate resistance is one of the most effective methods to improve the the device maximum oscillation frequency (fmax). But fmax is very sensitive to T-gate size, improper selection may reduce fmax, Therefore, in order to reduce the cost of production, it is necessary to select appropriate simulation T-gate size. We have worked out AlGaN/GaN HEMT with gate length of 0.17μm and fmax values 110GHz. Accuracy of the simulation model is verified by experiment. Then detailed simulates the impact of the T-gate size and we obtain ptimized T-gate size range.

scholarly journals An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology

Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 549
Author(s):  
Mohammad Abdul Alim ◽  
Christophe Gaquiere ◽  
Giovanni Crupi
Keyword(s):  
Ambient Temperature ◽  
Equivalent Circuit Model ◽  
Gate Length ◽  
Scattering Parameters ◽  
Temperature Dependent ◽  
Gan Hemt ◽  
Electron Transport Properties ◽  
The Impact ◽  
Insight Into ◽  
Microwave Characteristics

Presently, growing attention is being given to the analysis of the impact of the ambient temperature on the GaN HEMT performance. The present article is aimed at investigating both DC and microwave characteristics of a GaN-based HEMT versus the ambient temperature using measured data, an equivalent-circuit model, and a sensitivity-based analysis. The tested device is a 0.15-μm ultra-short gate-length AlGaN/GaN HEMT with a gate width of 200 μm. The interdigitated layout of this device is based on four fingers, each with a length of 50 μm. The scattering parameters are measured from 45 MHz to 50 GHz with the ambient temperature varied from −40 °C to 150 °C. A systematic study of the temperature-dependent performance is carried out by means of a sensitivity-based analysis. The achieved findings show that by the heating the transistor, the DC and microwave performance are degraded, due to the degradation in the electron transport properties.

Physics‐Based Simulation for Studying the Impact of Contact Resistance on DC and RF Characteristics of AlGaN/AlN/GaN HEMT

Radio Science ◽  
2019 ◽  
Vol 54 (10) ◽  
pp. 904-909
Author(s):  
Gunjan Rastogi ◽  
R. K. Kaneriya ◽  
Santanu Sinha ◽  
R. B. Upadhyay ◽  
A. N. Bhattacharya
Keyword(s):  
Contact Resistance ◽  
Gan Hemt ◽  
Physics Based Simulation ◽  
The Impact

scholarly journals Methodology for the investigation of threading dislocations as a source of vertical leakage in AlGaN/GaN-HEMT heterostructures for power devices

2019 ◽  
Vol 125 (9) ◽  
pp. 095704 ◽  
Author(s):  
S. Besendörfer ◽  
E. Meissner ◽  
A. Lesnik ◽  
J. Friedrich ◽  
A. Dadgar ◽  
...  
Keyword(s):  
Threading Dislocations ◽  
Power Devices ◽  
Gan Hemt ◽  
Vertical Leakage

Impact of Parasitic Capacitor to the GaN HEMT Devices

2015 ◽  
Vol 764-765 ◽  
pp. 515-520
Author(s):  
Chia Lin Chen ◽  
Chih Huan Fang ◽  
Yuan Chao Niu ◽  
Yaow Ming Chen
Keyword(s):  
High Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Switching Frequency ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
High Switching Frequency ◽  
Voltage Spike ◽  
The Impact

The objective of this paper is to evaluate the impact of the parasitic capacitor to the Gallium-Nitride (GaN) based high-electron-mobility transistor (HEMT). Because of the high switching frequency operation, the parasitic inductor has caught a lot of attention when the GaN HEMT is applied in the high power applications. However, the impact of parasitic capacitor to the GaN HEMT is not discussed in literatures. A prototype circuit is built and tested to evaluate the impacts of parasitic capacitor to the GaN HEMT performance. The results show that the parasitic capacitor can induce voltage spike and damage the GaN HEMT.

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