Enhancement Mode β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FET (HFET) With High Transconductance and Cutoff Frequency

This paper presents a detailed study of theoretical performance of graphene field effect transistor (GFET) using analytical approach. GFET shows promising performance in terms of faster saturation as well as extremely high cutoff frequency (3.9[Formula: see text]THz). A significant shift of the Dirac point as well as an asymmetrical ambipolar behavior is observed on the transfer characteristics. Similarly, an approximate symmetrical capacitance–voltage (C–V) characteristics is obtained where it has guaranteed the consistency because it shows a significant saturation both in the accumulation and inversion region. In addition, a high transconductance of 6800[Formula: see text]uS at small channel length (20[Formula: see text]nm) along with high cutoff frequency (3.9[Formula: see text]THz) has been observed which demands for high speed field effect devices.

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High-Current and High-Transconductance Self-Aligned P+-GaAs Junction HFET of Complete Enhancement-Mode Operation

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.2555 ◽

1999 ◽

Vol 38 (Part 1, No. 4B) ◽

pp. 2555-2558 ◽

Cited By ~ 1

Author(s):

Katsunori Nishii ◽

Mitsuru Nishitsuji ◽

Takahiro Yokoyama ◽

Shinji Yamamoto ◽

Akiyoshi Tamura ◽

...

Keyword(s):

High Current ◽

Enhancement Mode ◽

Mode Operation ◽

High Transconductance

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Enhancement-Mode N-Polar GaN Metal–Insulator–Semiconductor Field Effect Transistors with Current Gain Cutoff Frequency of 120 GHz

Applied Physics Express ◽

10.1143/apex.4.024103 ◽

2011 ◽

Vol 4 (2) ◽

pp. 024103 ◽

Cited By ~ 10

Author(s):

Uttam Singisetti ◽

Man Hoi Wong ◽

Sansaptak Dasgupta ◽

James S. Speck ◽

Umesh K. Mishra

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Cutoff Frequency ◽

Current Gain ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode

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Enhancement-Mode Pseudomorphic $\hbox{In}_{0.22} \hbox{Ga}_{0.78}\hbox{As}$-Channel MOSFETs With Ultrathin InAlP Native Oxide Gate Dielectric and a Cutoff Frequency of 60 GHz

IEEE Electron Device Letters ◽

10.1109/led.2010.2068034 ◽

2010 ◽

Cited By ~ 2

Author(s):

Xiu Xing ◽

Patrick J. Fay

Keyword(s):

Gate Dielectric ◽

Cutoff Frequency ◽

Native Oxide ◽

60 Ghz ◽

Enhancement Mode

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Dc and Microwave Characteristics of High Transconductance AlGaN/GaN Heterostructure Field Effect Transistors on Sic Substrates

MRS Proceedings ◽

10.1557/proc-482-1071 ◽

1997 ◽

Vol 482 ◽

Author(s):

Q. Chen ◽

J. W. Yang ◽

M. A. Khan ◽

A. T. Ping ◽

I. Adesida

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Cutoff Frequency ◽

Channel Current ◽

Heterostructure Field Effect Transistors ◽

High Power Operation ◽

Drain Bias ◽

Gan Heterostructure ◽

High Transconductance ◽

P Type

AbstractHigh quality AJGaN/GaN heterostructures have been successfully deposited on both nand p-type SiC substrates. Heterostructure field effect transistors fabricated using these layers exhibited high channel current density (1.71 A/mm), well behaved pinch-off characteristics, and excellent extrinsic transconductance (Gm = 229 mS/mm). There is negligible channel current degradation up to a source to drain bias of 20 V as opposed to devices grown on sapphire substrates. The 0.25 μm gate-length devices fabricated on the heterostructures grown on p-type SiC has allowed us to extract a cutoff frequency of 53 GHz. The cutoff frequency showed little deterioration with increasing drain bias voltage. These results demonstrate for the first time the high frequency and high power operation potential of the heterostructure field effect transistors based on AlGaN grown on SiC.

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