GaN-HEMTs on Diamond Prepared by Room-Temperature Bonding Technology

AbstractX-band performance, high temperature DC operation, and uniformity have been evaluated for 1 μm gate AlGaN/GaN HEMTs grown by RF atomic nitrogen plasma MBE. Deposition and fabrication were performed on 2-inch (0001) saphirre substrates to determine process uniformity. HEMTs with 300 μm total gate width and dual gate finger geometry have been fabricated with 650–700 cm2/V s mobility. Maximum frequency cut-offs on the order of of 8–10 were achieved. DC performance at room temperature was >500 mA/mm, and external transconductance was >70mS/mn. The transistors operated at test temperatures of 425°C.

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Measurement of Pulsed Current-Voltage Characteristics of AlGaN/GaN HEMTs from Room Temperature to 15 K

Acta Physica Polonica A ◽

10.12693/aphyspola.119.196 ◽

2011 ◽

Vol 119 (2) ◽

pp. 196-198 ◽

Cited By ~ 3

Author(s):

T. Laurent ◽

R. Sharma ◽

J. Torres ◽

P. Nouvel ◽

S. Blin ◽

...

Keyword(s):

Room Temperature ◽

Pulsed Current ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Gan Hemts

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Direct sapphire to ceramic bonding for CMOS image sensor packaging using room temperature bonding technology

International Symposium on Microelectronics ◽

10.4071/isom-2017-wp33_029 ◽

2017 ◽

Vol 2017 (1) ◽

pp. 000406-000410

Author(s):

H. Lundén ◽

A. Määttänen ◽

L. Murphy

Keyword(s):

Room Temperature ◽

Environmental Changes ◽

Cmos Image Sensor ◽

Image Sensor ◽

Medical Implants ◽

High Radiation ◽

Sensor Devices ◽

Bonding Technology ◽

Radiation Tolerant ◽

Bonding Technique

Abstract The aim of the study was to evaluate the use of a novel bonding technology to create a sapphire-ceramic package for CMOS image sensor devices. The package must be robust enough to be used in space flight applications: it must protect the device from external environmental conditions during testing, storage and use. A series of tests were executed to ensure the package quality. The package needs to be radiation-tolerant to ensure reliability of data in high radiation environments, such as in space. Package hermeticity is an important reliability requirement not only in space but also in other applications such as medical implants, military, nuclear inspection and telecoms. It was proved that novel bonding technique enables direct sapphire to ceramic bonding: robust packages were manufactured. A significant improvement in moisture levels was observed compared to (typically)epoxy sealed packages: detected moisture levels were of only one tenth of what is commonly seen in the stressed image sensor packages. Environmental changes had no influence on the package & device functionality or quality.

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Experimental and numerical investigation of Poole-Frenkel effect on dynamic R ON transients in C-doped p-GaN HEMTs

Semiconductor Science and Technology ◽

10.1088/1361-6641/ac4113 ◽

2021 ◽

Author(s):

Nicolò Zagni ◽

Marcello Cioni ◽

Ferdinando Iucolano ◽

Maurizio Moschetti ◽

Giovanni Verzellesi ◽

...

Keyword(s):

Numerical Simulations ◽

Room Temperature ◽

Arrhenius Plot ◽

Exponential Dependence ◽

Frenkel Effect ◽

Simultaneous Decrease ◽

Gan Hemts ◽

Dominant Acceptor ◽

State Stress

Abstract In this paper, we investigate the influence of Poole-Frenkel Effect (PFE) on the dynamic R ON transients in C-doped p-GaN HEMTs. To this aim, we perform a characterization of the dynamic R ON transients acquired during OFF-state stress (i.e., V GS,STR = 0 V < V T, V DS,STR = 25–125 V and we interpret the results with the aid of numerical simulations. We find that dynamic R ON transients at room temperature accelerate with V DS,STR 1/2, which is signature of PFE, as further confirmed by the simultaneous decrease of the activation energy (E A) extracted from the Arrhenius plot of the dynamic R ON transients at V DS,STR = 50 V and T = 30–110 °C. Results obtained by means of calibrated numerical simulations reproduce the exponential dependence of transients time constants (τ) on V DS,STR 1/2 and consequent E A reduction only when including PFE enhancement of hole emission from dominant acceptor traps in the buffer related to C doping. This result is consistent with the model that considers hole emission from acceptor traps (rather than electron capture) as the mechanism underlying dynamic R ON increase during OFF-state stress.

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