Quality factor of microstrip resonators based on YBCO films, in frequency range 1.5-2 GHz

Author(s):  
M. Skoryk ◽  
V. Pan ◽  
V. Tarasov ◽  
V. Flis ◽  
A. Filimonov ◽  
...  
2017 ◽  
Vol 26 (05) ◽  
pp. 1750075 ◽  
Author(s):  
Najam Muhammad Amin ◽  
Lianfeng Shen ◽  
Zhi-Gong Wang ◽  
Muhammad Ovais Akhter ◽  
Muhammad Tariq Afridi

This paper presents the design of a 60[Formula: see text]GHz-band LNA intended for the 63.72–65.88[Formula: see text]GHz frequency range (channel-4 of the 60[Formula: see text]GHz band). The LNA is designed in a 65-nm CMOS technology and the design methodology is based on a constant-current-density biasing scheme. Prior to designing the LNA, a detailed investigation into the transistor and passives performances at millimeter-wave (MMW) frequencies is carried out. It is shown that biasing the transistors for an optimum noise figure performance does not degrade their power gain significantly. Furthermore, three potential inductive transmission line candidates, based on coplanar waveguide (CPW) and microstrip line (MSL) structures, have been considered to realize the MMW interconnects. Electromagnetic (EM) simulations have been performed to design and compare the performances of these inductive lines. It is shown that the inductive quality factor of a CPW-based inductive transmission line ([Formula: see text] is more than 3.4 times higher than its MSL counterpart @ 65[Formula: see text]GHz. A CPW structure, with an optimized ground-equalizing metal strip density to achieve the highest inductive quality factor, is therefore a preferred choice for the design of MMW interconnects, compared to an MSL. The LNA achieves a measured forward gain of [Formula: see text][Formula: see text]dB with good input and output impedance matching of better than [Formula: see text][Formula: see text]dB in the desired frequency range. Covering a chip area of 1256[Formula: see text][Formula: see text]m[Formula: see text]m including the pads, the LNA dissipates a power of only 16.2[Formula: see text]mW.


1999 ◽  
Vol 14 (2) ◽  
pp. 500-502
Author(s):  
Seungbum Hong ◽  
Eunah Kim ◽  
Han Wook Song ◽  
Jongwan Choi ◽  
Dae-Weon Kim ◽  
...  

It has been generally accepted that the product of the unloaded quality factor and resonant frequency is the universal parameter for comparison of dielectric resonators with different size.1,2 However, it is suggested in this study that this universal parameter should be modified due to the presence of the polarons. From the frequency dependence of the unloaded quality factor, it is possible to extract the factor determined only by the phonon scattering effects, and we denoted this parameter by Qs. It was found that the Qs parameter for ZrxSnzTiyO4 (ZST) and Ba(Zn1/3Ta2/3)O3 (BZT) ceramics showed constancy in the frequency range of 2–12 GHz, which supports the idea of polaron conduction loss contribution to the dielectric loss.


1995 ◽  
Vol 85 (5) ◽  
pp. 1359-1372
Author(s):  
Hsi-Ping Liu

Abstract Because of its simple form, a bandlimited, four-parameter anelastic model that yields nearly constant midband Q for low-loss materials is often used for calculating synthetic seismograms. The four parameters used in the literature to characterize anelastic behavior are τ1, τ2, Qm, and MR in the relaxation-function approach (s1 = 1/τ1 and s2 = 1/τ2 are angular frequencies defining the bandwidth, MR is the relaxed modulus, and Qm is approximately the midband quality factor when Qm ≫ 1); or τ1, τ2, Qm, and MR in the creep-function approach (s1 = 1/τ1 and s2 = 1/τ2 are angular frequencies defining the bandwidth, and Qm is approximately the midband quality factor when Qm ≫ 1). In practice, it is often the case that, for a particular medium, the quality factor Q(ω0) and phase velocity c(ω0) at an angular frequency ω0 (s1 < ω0 < s2; s1 < ω0 < s2) are known from field measurements. If values are assigned to τ1 and τ2 (τ2 < τ1), or to τ1 and τ2 (τ2 < τ1), then the two remaining parameters, Qm and MR, or Qm and MR, can be obtained from Q(ω0). However, for highly attenuative media, e.g., Q(ω0) ≦ 5, Q(ω) can become highly skewed and negative at low frequencies (for the relaxation-function approach) or at high frequencies (for the creep-function approach) if this procedure is followed. A negative Q(ω) is unacceptable because it implies an increase in energy for waves propagating in a homogeneous and attenuative medium. This article shows that given (τ1, τ2, ω0) or (τ1, τ2, ω0), a lower limit of Q(ω0) exists for a bandlimited, four-parameter anelastic model. In the relaxation-function approach, the minimum permissible Q(ω0) is given by ln [(1 + ω20τ21)/(1 + ω20τ22)]/{2 arctan [ω0(τ1 − τ2)/(1 + ω20τ1τ2)]}. In the creep-function approach, the minimum permissible Q(ω0) is given by {2 ln (τ1/τ2) − ln [(1 + ω20τ21)/(1 + ω20τ22)]}/{2 arctan [ω0(τ1 − τ2)/(1 + ω20τ1τ2)]}. The more general statement that, for a given set of relaxation mechanisms, a lower limit exists for Q(ω0) is also shown to hold. Because a nearly constant midband Q cannot be achieved for highly attenuative media using a four-parameter anelastic model, a bandlimited, six-parameter anelastic model that yields a nearly constant midband Q for such media is devised; an expression for the minimum permissible Q(ω0) is given. Six-parameter anelastic models with quality factors Q ∼ 5 and Q ∼ 16, constant to 6% over the frequency range 0.5 to 200 Hz, illustrate this result. In conformity with field observations that Q(ω) for near-surface earth materials is approximately constant over a wide frequency range, the bandlimited, six-parameter anelastic models are suitable for modeling wave propagation in highly attenuative media for bandlimited time functions in engineering and exploration seismology.


Author(s):  
A. N. Kuznetsov ◽  
S. A. Doberstein ◽  
I. V. Veremeev

This paper presents the data for frequency trimming of the single port STW resona-tors in a frequency range of 500–1000 MHz by plasma chemical etching method. The main parameters of resonators after frequency trimming are given: frequency tolerance <±100·10–6, quality factor of 8600–9500, equivalent elements needed for use of the STW resonators.


2011 ◽  
Vol 2011 (CICMT) ◽  
pp. 000054-000058 ◽  
Author(s):  
Goran Radosavljević ◽  
Andrea Marić ◽  
Walter Smetana ◽  
Ljiljana Živanov

This paper presents for the first time a parallel comparison of the performance of RF inductors realized on different substrate configurations. Presented inductors are meander type structures fabricated in Low Temperature Co-fired Ceramic (LTCC) technology. Also, chosen material is never before implemented for inductor fabrication. The performance improvement is achieved by design optimization of different substrate configurations that incorporate placement of an air-gap beneath the inductor and/or introduction of an additional shielding layer on the top. Designed structures are characterized on the basis of simulation and experimental data, achieving good correlation between obtained results. Presented results show over 30 % increase in quality factor and widening of the operating frequency range by over 55 %.


2002 ◽  
Vol 15 (2) ◽  
pp. 212-216 ◽  
Author(s):  
R Schneider ◽  
A G Zaitsev ◽  
J Geerk ◽  
G Linker ◽  
F Ratzel ◽  
...  

2011 ◽  
Vol 135-136 ◽  
pp. 918-923 ◽  
Author(s):  
Qing Hua Li

A structure of multi-layer spiral inductor having parallel and series branches of the metal strip was designed for fully-integrated DC-DC converters. As the result that the parallel branching structure greatly reduced the series resistance and the series branching structure greatly improved the series inductance of the inductor, the structure can achieve quality factor and current capability enhancement while compatible with conventional CMOS process. The quality factor was quantitatively analyzed with a scalable model and its origin was investigated at a structural point of view. From the experiment results, the substrate effects can be neglected in the interesting frequency range, 50MHz -500MHz, and the quality factor is enhanced beyond the additional parasitic capacitance.


1997 ◽  
Vol 227 (3-4) ◽  
pp. 153-158 ◽  
Author(s):  
S Rowan ◽  
R Hutchins ◽  
A McLaren ◽  
N.A Robertson ◽  
S.M Twyford ◽  
...  

1997 ◽  
Vol 229 (6) ◽  
pp. 416
Author(s):  
S. Rowan ◽  
R. Hutchins ◽  
A. McLaren ◽  
N.A. Robertson ◽  
S.M. Twyford ◽  
...  

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