Electrical conductivity of aliovalent substitution solid solution Pb1−xSmxSnF4+x

2017 ◽  
Author(s):  
Y.V. Pogorenko ◽  
A.O. Omel'chuk ◽  
R.M. Pshenychnyi ◽  
S.B. Bol'shanina ◽  
R.M. Pshenychnyi
Keyword(s):  
Solid Solution ◽  
Electrical Conductivity ◽  
Substitution Solid Solution ◽  
Aliovalent Substitution

Effect of Heat Treatment on Microstructure and Properties of Cu-3Ti-1Al Alloy

2013 ◽  
Vol 749 ◽  
pp. 282-286
Author(s):  
Xian Hui Wang ◽  
Xiao Chun Sun ◽  
Xiao Hong Yang ◽  
Shu Hua Liang
Keyword(s):  
Heat Treatment ◽  
Solid Solution ◽  
Electrical Conductivity ◽  
Electron Microscope ◽  
Treatment Process ◽  
Intermetallic Phase ◽  
Strengthening Effect ◽  
Microstructure And Properties ◽  
Optimal Heat Treatment ◽  
Transmission Electron

The effect of heat treatment on the microstructure and properties of Cu-3Ti-1Al alloy was investigated. The microstructure was characterized by scanning electron microscope (SEM) and transmission electron microscope (TEM), and the hardness and electrical conductivity were tested as well. The results showed that the hardness and electrical conductivity of Cu-3Ti-1Al alloy increased significantly after solid solution and ageing treatment. The strengthening effect of Cu-3Ti-1Al alloy was attributed to the formation of intermetallic phase such as Ti3Al and fine precipitates of coherent β-Cu4Ti. With increase of the aging time and the temperature, the precipitates became coarse and incoherent with Cu matrix, and the discontinuous precipitate β started to grow from grain boundaries toward grain interior, which decreased hardness. As the formation of Ti3Al, β-Cu3Ti and β-Cu4Ti phase can efficiently reduce Ti concentration in Cu matrix. The electrical conductivity of Cu-3Ti-1Al alloy increases. In the range of experiments, the optimal heat treatment process for Cu-3Ti-1Al alloy is solid solution at 850°C for 4h and ageing 500°C for 2h, and the hardness and electrical conductivity are 227HV and 12.3%IACS, respectively.

scholarly journals Термоэлектрические свойства нанокомпозитного Bi-=SUB=-0.45-=/SUB=-Sb-=SUB=-1.55-=/SUB=-Te-=SUB=-2.985-=/SUB=- с микрочастицами SiO-=SUB=-2-=/SUB=-

2019 ◽  
Vol 53 (6) ◽  
pp. 751
Author(s):  
А.А. Шабалдин ◽  
П.П. Константинов ◽  
Д.А. Курдюков ◽  
Л.Н. Лукьянова ◽  
А.Ю. Самунин ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Solid Solution ◽  
Electrical Conductivity ◽  
Wide Temperature Range ◽  
Figure Of Merit ◽  
Nanostructured Material ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Efficiency ◽  
Thermoelectric Figure ◽  
P Type

AbstractNanocomposite thermoelectrics based on Bi_0.45Sb_1.55Te_2.985 solid solution of p -type conductivity are fabricated by the hot pressing of nanopowders of this solid solution with the addition of SiO_2 microparticles. Investigations of the thermoelectric properties show that the thermoelectric power of the nanocomposites increases in a wide temperature range of 80–420 K, while the thermal conductivity considerably decreases at 80–320 K, which, despite a decrease in the electrical conductivity, leads to an increase in the thermoelectric efficiency in the nanostructured material without the SiO_2 addition by almost 50% (at 300 K). When adding SiO_2, the efficiency decreases. The initial thermoelectric fabricated without nanostructuring, in which the maximal thermoelectric figure of merit ZT = 1 at 390 K, is most efficient at temperatures above 350 K.

scholarly journals Studying of dielectric spectra of YCu0.15Mn0.85O3 solid solution with the use of complex conductivity

2021 ◽  
pp. 2160013
Author(s):  
A. V. Nazarenko ◽  
A. V. Pavlenko ◽  
Y. I. Yurasov
Keyword(s):  
Solid Solution ◽  
Electrical Conductivity ◽  
Model Description ◽  
Complex Conductivity ◽  
Electrophysical Properties ◽  
Approximation Model ◽  
Frequency Range ◽  
Dielectric Parameters ◽  
Frequency Behavior ◽  
Complex Electrical Conductivity

This work presents the results of studying the electrophysical properties of the YCu[Formula: see text]Mn[Formula: see text]O3 solid solution in the range of temperatures of [Formula: see text] = 26–400[Formula: see text]C and frequency range of [Formula: see text] = 102–105 Hz. A model description of the revealed dispersion of dielectric parameters in the material is made. The nonclassical modified Havriliak–Negami model written for complex electrical conductivity was used as an approximation model. It is shown that the application of this model almost exactly describes the frequency behavior of the dielectric constant [Formula: see text]/[Formula: see text], the dielectric loss tangent tg[Formula: see text] as well as the real and imaginary parts of complex conductivity [Formula: see text] and [Formula: see text]. The results of this work are an important step in identifying the opportunities and understanding the applications of this model.

Production and Study of Ca/Sn(II) Metastable Fluoride Ion Conductors

1997 ◽  
Vol 481 ◽  
Author(s):  
Michael F. Bell ◽  
Georges Dénès ◽  
Zhimeng Zhu
Keyword(s):  
Solid Solution ◽  
Electrical Conductivity ◽  
High Temperature ◽  
Calcium Nitrate ◽  
Fluoride Ion ◽  
Conductivity Measurements ◽  
Ambient Conditions ◽  
Reaction Conditions ◽  
Density Measurements ◽  
Ion Conductors

ABSTRACTPrecipitation reactions from aqueous solutions of calcium nitrate and tin(II) fluoride result in the formation of two metastable phases, depending on the reaction conditions. Crystalline CaSn2F6 and the microcrystalline Ca1-xSnxF2 solid solution are obtained, the latter crystallizing in the cubic fluorite (CaF2) type with total Ca/Sn disorder. Both phases are fluoride ion conductors. Electrical conductivity measurements versus temperature and bulk density measurements show that both phases are far from thermodynamic equilibrium at ambient conditions, and thus are metastable. Both decompose to a mixture of SnF2 and CaF2 at high temperature. In addition, CaSn2F6 is chemically unstable in an aqueous medium, in which it looses SnF2 to give the microcrystalline Ca1-xSnxF2 solid solution.

Electrical Conductivity and Phase Transitions in Ferroelectric Solid Solutions Li0.17Na0.83ТауNb1-уO3 (y = 0 – 0.5) in High Pressure

2020 ◽  
Vol 310 ◽  
pp. 6-13
Author(s):  
Vadim V. Efremov ◽  
Mikhail N. Palatnikov ◽  
Yuriy V. Radyush ◽  
Olga B. Shcherbina
Keyword(s):  
Solid Solution ◽  
Electrical Conductivity ◽  
High Pressure ◽  
Phase Transitions ◽  
Solid Solutions ◽  
Synthesis Method ◽  
Ferroelectric Ceramic ◽  
Synthesis Temperature ◽  
Structure Phase ◽  
Ceramic Solid Solution

Ferroelectric ceramic solid solutions LixNa1-xTayNb1-yO3 (х = 0.17; у = 0 – 0.5) with the perovskite structure have been obtained by the thermobaric synthesis method. Particularities of their microstructure, elastic properties, electrical conductivity and permittivity have been researched. It has been established that an increase in the thermobaric synthesis temperature leads to a decrease in the Young’s modulus value. Specific static conductivity values have been determined; charge carrier activation enthalpies На have been calculated. The Curie temperature of the samples has been determined to decrease with an increase in tantalum content. A Ferroelectric ceramic solid solution Li0.17Na0.83Ta0.1Nb0.9O3 was shown to undergo four structure phase transitions in the temperature range 300-820 К. A Li0.17Na0.83Ta0.1Nb0.9O3 has been shown to be a high temperature superionic. Possible mechanisms of the detected phenomena are discussed.

Thermal Annealing of Amorphous CoMnNiO Film on Oxidized Si Substrate

1989 ◽  
Vol 164 ◽  
Author(s):  
Tan Hui ◽  
Qin Dong ◽  
Tao Mingde ◽  
Lin Chenglu ◽  
Zou Shichang
Keyword(s):  
Solid Solution ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Amorphous Film ◽  
Spinel Solid Solution ◽  
Si Substrate ◽  
Structure Relaxation ◽  
Spinel Solid Solutions

AbstractAmorphous CoMnNiO film is doposited on oxidized Si substrate by RF sputtering equipment. Structure relaxation occurs in the amorphous CoMnNiO film when it is annealed below 550°C. Annealed in the range from 600°C to 1000°C, the amorphous film is converted into the polycrystal. After annealing in rich oxygen atmosphere, the amorphous film is transformed into spinel solid solution with stable structure and good electrical properties. The electrical conductivity will be reduced due to formation of low valence oxides when annealed without oxygen. As annealing temperature is higher than 1000°C, some spinel solid solutions will be resolved into low valence oxides CoO and NiO, reducing the conductivity of the CoMnNiO film.

scholarly journals Electrical Transport and Thermoelectric Properties of SnSe–SnTe Solid Solution

Materials ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 3854 ◽  
Author(s):  
Jun-Young Cho ◽  
Muhammad Siyar ◽  
Woo Chan Jin ◽  
Euyheon Hwang ◽  
Seung-Hwan Bae ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Solid Solution ◽  
Electrical Conductivity ◽  
Single Crystal ◽  
Carrier Concentration ◽  
Electrical Transport ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
Practical Applications ◽  
Defect Sites

SnSe is considered as a promising thermoelectric (TE) material since the discovery of the record figure of merit (ZT) of 2.6 at 926 K in single crystal SnSe. It is, however, difficult to use single crystal SnSe for practical applications due to the poor mechanical properties and the difficulty and cost of fabricating a single crystal. It is highly desirable to improve the properties of polycrystalline SnSe whose TE properties are still not near to that of single crystal SnSe. In this study, in order to control the TE properties of polycrystalline SnSe, polycrystalline SnSe–SnTe solid solutions were fabricated, and the effect of the solid solution on the electrical transport and TE properties was investigated. The SnSe1−xTex samples were fabricated using mechanical alloying and spark plasma sintering. X-ray diffraction (XRD) analyses revealed that the solubility limit of Te in SnSe1−xTex is somewhere between x = 0.3 and 0.5. With increasing Te content, the electrical conductivity was increased due to the increase of carrier concentration, while the lattice thermal conductivity was suppressed by the increased amount of phonon scattering. The change of carrier concentration and electrical conductivity is explained using the measured band gap energy and the calculated band structure. The change of thermal conductivity is explained using the change of lattice thermal conductivity from the increased amount of phonon scattering at the point defect sites. A ZT of ~0.78 was obtained at 823 K from SnSe0.7Te0.3, which is an ~11% improvement compared to that of SnSe.

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