A power efficient wide band trans-impedance amplifier in sub-micron CMOS integrated circuit technology

2008 ◽  
Author(s):  
Rabin Raut ◽  
Omidreza Ghasemi
Keyword(s):  
Integrated Circuit ◽  
Wide Band ◽  
Power Efficient ◽  
Cmos Integrated Circuit ◽  
Circuit Technology

scholarly journals Commercialisation of CMOS Integrated Circuit Technology in Multi-Electrode Arrays for Neuroscience and Cell-Based Biosensors

Sensors ◽  
2011 ◽  
Vol 11 (5) ◽  
pp. 4943-4971 ◽  
Author(s):  
Anthony H. D. Graham ◽  
Jon Robbins ◽  
Chris R. Bowen ◽  
John Taylor
Keyword(s):  
Integrated Circuit ◽  
Electrode Arrays ◽  
Cmos Integrated Circuit ◽  
Circuit Technology

scholarly journals Skybridge-3D-CMOS: A Fine-Grained 3D CMOS Integrated Circuit Technology

2017 ◽  
Vol 16 (4) ◽  
pp. 639-652 ◽  
Author(s):  
Mingyu Li ◽  
Jiajun Shi ◽  
Mostafizur Rahman ◽  
Santosh Khasanvis ◽  
Sachin Bhat ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Cmos Integrated Circuit ◽  
Fine Grained ◽  
Circuit Technology

Preparation of TEM samples by focused ion beams

1995 ◽  
Vol 53 ◽  
pp. 518-519
Author(s):  
John F. Walker ◽  
J C Reiner ◽  
C Solenthaler
Keyword(s):  
Integrated Circuit ◽  
Polycrystalline Silicon ◽  
Field Effect Transistor ◽  
High Spatial Resolution ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Precise Location ◽  
Effect Transistor ◽  
Circuit Technology

The high spatial resolution available from TEM can be used with great advantage in the field of microelectronics to identify problems associated with the continually shrinking geometries of integrated circuit technology. In many cases the location of the problem can be the most problematic element of sample preparation. Focused ion beams (FIB) have previously been used to prepare TEM specimens, but not including using the ion beam imaging capabilities to locate a buried feature of interest. Here we describe how a defect has been located using the ability of a FIB to both mill a section and to search for a defect whose precise location is unknown. The defect is known from electrical leakage measurements to be a break in the gate oxide of a field effect transistor. The gate is a square of polycrystalline silicon, approximately 1μm×1μm, on a silicon dioxide barrier which is about 17nm thick. The break in the oxide can occur anywhere within that square and is expected to be less than 100nm in diameter.

A Power-Efficient Noise Canceling Technique Using Signal-Suppression Feed-Forward for Wideband LNAs

2015 ◽  
Vol 643 ◽  
pp. 109-116
Author(s):  
Daiki Oki ◽  
Satoru Kawauchi ◽  
Cong Bing Li ◽  
Masataka Kamiyama ◽  
Seiichi Banba ◽  
...  
Keyword(s):  
Power Consumption ◽  
Input Signal ◽  
Noise Figure ◽  
Wide Band ◽  
Noise Cancellation ◽  
Cmos Process ◽  
Feed Forward ◽  
Power Efficient ◽  
Signal Suppression ◽  
Noise Canceling

This paper presents a power-efficient noise-canceling technique based on the feed-forward amplifiers, considering a fundamental tradeoff between noise figure (NF) and power consumption in the design of wide-band amplifiers. By suppressing the input signal of the noise cancellation amplifier, the nonlinear effect on the amplifier can be reduced, as well as the power consumption can be smaller. Furthermore, as a lower gain of the noise-canceling sub-amplifier can be achieved simultaneously, further reduction of the power consumption becomes possible. The verification of the proposed technique is conducted with Spectre simulation using 90nm CMOS process.

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