Room Temperature Wet Chemical Growth of an Oxygen Enhanced Diffusion Oxide Utilized in a Boron Diffusion Process

2019 ◽  
Author(s):  
Orry Faur ◽  
Maria Faur
Keyword(s):  
Diffusion Process ◽  
Room Temperature ◽  
Boron Diffusion ◽  
Enhanced Diffusion ◽  
Wet Chemical

Enhanced Boron Diffusion in Amorphous Silicon

2004 ◽  
Vol 810 ◽  
Author(s):  
J.M. Jacques ◽  
N. Burbure ◽  
K.S. Jones ◽  
M.E. Law ◽  
L.S. Robertson ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Solid Phase ◽  
Amorphous Layer ◽  
Boron Diffusion ◽  
Cross Sectional ◽  
Enhanced Diffusion ◽  
Transmission Electron ◽  
Variable Angle Spectroscopic Ellipsometry ◽  
Secondary Ion

ABSTRACTIn prior works, we demonstrated the phenomenon of fluorine-enhanced boron diffusion within self-amorphized silicon. Present studies address the process dependencies of low temperature boron motion within ion implanted materials utilizing a germanium amorphization. Silicon wafers were preamorphized with either 60 keV or 80 keV Ge+ at a dose of 1×1015 atoms/cm2. Subsequent 500 eV, 1×1015 atoms/cm211B+ implants, as well as 6 keV F+ implants with doses ranging from 1×1014 atoms/cm2 to 5×1015 atoms/cm2 were also done. Furnace anneals were conducted at 550°C for 10 minutes under an inert N2 ambient. Secondary Ion Mass Spectroscopy (SIMS) was utilized to characterize the occurrence of boron diffusion within amorphous silicon at room temperature, as well as during the Solid Phase Epitaxial Regrowth (SPER) process. Amorphous layer depths were verified through Cross-Sectional Transmission Electron Microscopy (XTEM) and Variable Angle Spectroscopic Ellipsometry (VASE). Boron motion within as-implanted samples is observed at fluorine concentrations greater than 1×1020 atoms/cm3. The magnitude of the boron motion scales with increasing fluorine dose and concentration. During the initial stages of SPER, boron was observed to diffuse irrespective of the co-implanted fluorine dose. Fluorine enhanced diffusion at room temperature does not appear to follow the same process as the enhanced diffusion observed during the regrowth process.

Wet Chemical Etching of Zn-containing oxides and HfO2 for the fabrication of Transparent TFTs

2009 ◽  
Vol 1201 ◽  
Author(s):  
Jae-Kwan Kim ◽  
Jun Young Kim ◽  
Seung-Cheol Han ◽  
Joon Seop Kwak ◽  
Ji-Myon Lee
Keyword(s):  
Sulfuric Acid ◽  
Surface Morphology ◽  
Chemical Etching ◽  
Etch Rate ◽  
Room Temperature ◽  
Wet Chemical ◽  
Wet Chemical Etching

AbstractThe etch rate and surface morphology of Zn-containing oxide and HfO2 films after wet chemical etching were investigated. ZnO could be easily etched using each acid tested in this study, specifically sulfuric, formic, oxalic, and HF acids. The etch rate of IGZO was strongly dependent on the etchant used, and the highest measured etch rate (500 nm/min) was achieved using buffered oxide etchant at room temperature. The etch rate of IGZO was drastically increased when sulfuric acid at concentration greater than 1.5 molar was used. Furthermore, etching of HfO2 films by BF acid proceeded through lateral widening and merging of the initial irregular pits.

Tailored defect-induced sharp excitonic emission from microcrystalline CuI and its ab initio validation

2014 ◽  
Vol 2 (32) ◽  
pp. 6592-6600 ◽  
Author(s):  
Swati Das ◽  
Subhajit Saha ◽  
Dipayan Sen ◽  
Uttam Kumar Ghorai ◽  
Kalyan Kumar Chattopadhyay
Keyword(s):  
Thin Films ◽  
Ab Initio ◽  
Chemical Reaction ◽  
Room Temperature ◽  
Iodine Concentration ◽  
Excitonic Emission ◽  
Wet Chemical

Iodine concentration modulated free excitonic emission of CuI thin films developed by wet chemical reaction at room temperature.

ChemInform Abstract: Wet Chemical Digital Etching of GaAs at Room Temperature.

ChemInform ◽  
2010 ◽  
Vol 28 (12) ◽  
pp. no-no
Author(s):  
G. C. DESALVO ◽  
C. A. BOZADA ◽  
J. L. EBEL ◽  
D. C. LOOK ◽  
J. P. BARRETTE ◽  
...  
Keyword(s):  
Room Temperature ◽  
Wet Chemical

Room Temperature Boron Diffusion in Amorphous Silicon

2006 ◽  
Vol 912 ◽  
Author(s):  
Jeannette M. Jacques ◽  
Kevin S. Jones ◽  
Mark E. Law ◽  
Lance S. Robertson ◽  
Leonard M. Rubin ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Amorphous Materials ◽  
Room Temperature ◽  
Trapping Site ◽  
Concentration Change ◽  
Boron Diffusion ◽  
Dopant Distribution ◽  
Post Implantation ◽  
Site Population ◽  
Trapping Sites

AbstractAs millisecond annealing is increasingly utilized, the as-implanted profile dominates the final dopant distribution. We characterized boron diffusion in amorphous silicon prior to post-implantation annealing. SIMS confirmed that both fluorine and germanium enhance boron motion in amorphous materials. The magnitude of boron diffusion in germanium amorphized silicon scales with increasing fluorine dose. Boron atoms are mobile at concentrations approaching 1x1019 atoms/cm^3. It appears that defects inherent to the structure of amorphous silicon can trap and immobilize boron atoms at room temperature, but that chemical reactions involving Si-F and Si-Ge eliminate potential trapping sites. Sequential Ge+, F+, and B+ implants result in 80% more boron motion than do sequential Si+, F+, and B+ implants. The mobile boron dose and trapping site concentration change as functions of the fluorine dose through power law relationships. As the fluorine dose increases, the trapping site population decreases and the mobile boron dose increases. This reduction in trap density can result in as-implanted “junction depths” that are as much as 75% deeper (taken at 1x1018 atoms/cm-3) for samples implanted with 500 eV, 1x1015 atoms/cm2 boron.

Investigation of Fluorine Effect on the Boron Diffusion by Mean of Boron Redistribution in Shallow Delta-doped Layers

2004 ◽  
Vol 810 ◽  
Author(s):  
A. Halimaoui ◽  
J. M. Hartmann ◽  
C. Laviron ◽  
R. El-Farhane ◽  
F. Laugier
Keyword(s):  
Point Defects ◽  
Depth Profiling ◽  
Boron Diffusion ◽  
Enhanced Diffusion ◽  
Boron Doped ◽  
Transient Enhanced Diffusion ◽  
Sims Depth Profiling

ABSTRACTPreviously published articles have shown that co-implanted fluorine reduces transient enhanced diffusion of boron. However, it is not yet elucidated whether this effect is due to interaction of fluorine with point-defects or boron atoms. In this work, we have used boron redistribution in a shallow Delta-doped Si structures in order to get some insights into the role of fluorine in the boron diffusion. The structures consisted of 3 boron-doped layers separated by 40nm-thick undoped silicon. The samples were given to Ge preamorphization and F co-implant. SIMS depth profiling was used to analyse boron redistribution after annealing. The results we obtained strongly suggest that fluorine is not interacting with point-defects. The reduction in boron TED is most probably due to boron-fluorine interaction.

An Ultra-Simple Method for Synthesis of Violet CdS Quantum Dots at Sub-Room Temperature

2020 ◽  
Vol 20 (6) ◽  
pp. 3935-3938 ◽  
Author(s):  
Chandan Yadav ◽  
Karan Surana ◽  
Pramod K. Singh ◽  
Bhaskar Bhattacharya
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Uv Light ◽  
Xrd Analysis ◽  
Wet Chemical Method ◽  
Simple Method ◽  
Light Emitting ◽  
Violet Color ◽  
Wet Chemical ◽  
Sensitized Solar Cells

The emergence of fluorescence quantum dots (QDs) has led to the development of variety of applications in science and technology. Owing to the diverse optical and electrical properties of CdS QDs we have synthesized the same using wet chemical method. The QDs have been prepared at sub-room temperature using a new solvent comprising a mixture of water and methanol. The QDs when seen under UV light radiate violet color. The band-gap of the QDs deduced from the absorption spectra was 3.08 eV while PL spectra of the QDs suggested possibility of multiple exciton generation with a close to narrow size distribution. XRD analysis confirmed cubic structure of the particles. The obtained results suggest that these QDs can play ideal role in quantum dot sensitized solar cells (QDSSC) or in light emitting diodes (LEDs).

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