In this paper we present Si and SiGe bipolar technologies and circuits suited for present and future high-performance communication systems. The silicon bipolar technology described has an implanted base and, without increase in process complexity in comparison to current production technologies, transit frequencies of 52 GHz and maximum oscillation frequencies of 65 GHz are achieved. The transistors of the described epitaxial SiGe-base technologies exhibit transit frequencies of 81 GHz and maximum oscillation frequencies of 95 GHz. Measurement results of circuits realized in these technologies for low power and high-speed applications are presented: a 43 GHz low power dynamic frequency divider, a 23 GHz monolithically integrated oscillator, a 40 Gb/s clock and data (CDR) recovery realized in the pure silicon bipolar technology, and a 53 GHz static frequency divider, a 79 GHz dynamic frequency divider and a 20 GHz/27 mW dual-modulus prescaler in the SiGe technology.
