System-level electro-thermal analysis of RDS(ON) for power MOSFET

2017 ◽  
Author(s):  
Rajen Murugan ◽  
Nathan Ai ◽  
C.T. Kao
Keyword(s):  
Thermal Analysis ◽  
System Level ◽  
Power Mosfet

scholarly journals H131 Evaluation of Heat Generation of Si Power MOSFET using Electro-Thermal Analysis

2012 ◽  
Vol 2012 (0) ◽  
pp. 245-246
Author(s):  
Risako Kibushi ◽  
Tomoyuki Hatakeyama ◽  
Masaru Ishizuka
Keyword(s):  
Thermal Analysis ◽  
Heat Generation ◽  
Power Mosfet

VOLTAGE DEPENDENCE OF HOT SPOT TEMPERATURE ON SIC POWER MOSFET WITH ELECTRO-THERMAL ANALYSIS

2018 ◽  
Author(s):  
Risako Kibushi ◽  
Tomoyuki Hatakeyama ◽  
Kazuhisa Yuki ◽  
Noriyuki Unno ◽  
Masaru Ishizuka
Keyword(s):  
Thermal Analysis ◽  
Voltage Dependence ◽  
Hot Spot ◽  
Power Mosfet ◽  
Spot Temperature

Doping Dependent Electro-Thermal Analysis of 4H-SiC Power MOSFET

2020 ◽  
Vol 17 (7) ◽  
pp. 2905-2911
Author(s):  
Ngoc Thi Nguyen ◽  
Seong-Ji Min ◽  
Sang-Mo Koo
Keyword(s):  
Thermal Analysis ◽  
Temperature Distribution ◽  
Hot Spot ◽  
Drift Region ◽  
Analysis Method ◽  
Doping Density ◽  
Power Mosfet ◽  
Thermal Analysis Method ◽  
Mos Structure ◽  
Spot Temperature

This paper presents a comparison of device behaviors of 4H-SiC DMOSFET (DMOS), trench MOS-FETs without (T-MOS) and with a p-shield (TP-MOS). The influence of doping density on device temperature distribution is investigated using the electro-thermal analysis method. It is established that the formation of a hot-spot (the highest temperature) is formed at the junction between the p-base and the n-drift region next to the corner of the trench gate. This hot spot temperature increases with rising doping density of the n-drift region. Additionally on-resistance (Ron) of the three examined structures increase when temperatures rise from 300 K to 523 K. At 300 K, the on-resistance of the TP-MOS was 2.7 mil cm2 32.5% lower than that of T-MOS while 67.47% lower than that of DMOS. When the temperature rises to 523 K, TP-MOS structure, with an on-resistance of 5.26 mil cm2 is obtained, which is lower by 34.25% and 73.7% with comparison to those of T-MOS and DMOS, respectively.

Integrated Thermal Analysis of Natural Convection Air Cooled Electronic Enclosure

1999 ◽  
Vol 121 (2) ◽  
pp. 108-115 ◽  
Author(s):  
L. Tang ◽  
Y. K. Joshi
Keyword(s):  
Heat Transfer ◽  
Thermal Analysis ◽  
Boundary Condition ◽  
Natural Convection ◽  
Thermal Analyses ◽  
Heat Fluxes ◽  
Global Model ◽  
System Level ◽  
Integrated Analysis ◽  
Component Level

In the present paper, a methodology is described for the integrated thermal analysis of a laminar natural convection air cooled nonventilated electronic system. This approach is illustrated by modeling an enclosure with electronic components of different sizes mounted on a printed wiring board. First, a global model for the entire enclosure was developed using a finite volume computational fluid dynamics/heat transfer (CFD/CHT) approach on a coarse grid. Thermal information from the global model, in the form of board and component surface temperatures, local heat transfer coefficients and reference temperatures, and heat fluxes, was extracted. These quantities were interpolated on a finer grid using bilinear interpolation and further employed in board and component level thermal analyses as various boundary condition combinations. Thus, thermal analyses at all levels were connected. The component investigated is a leadless ceramic chip carrier (LCCC). The integrated analysis approach was validated by comparing the results for a LCCC package with those obtained from detailed system level thermal analysis for the same package. Two preferred boundary condition combinations are suggested for component level thermal analysis.

A System Level Thermal Analysis of Large Telecommunication Racks

2003 ◽  
Author(s):  
L. T. Yeh
Keyword(s):  
Thermal Analysis ◽  
Flow Rate ◽  
Printed Circuit Boards ◽  
System Level ◽  
Circuit Boards ◽  
Air Flow Rate ◽  
Printed Circuit ◽  
Computational Fluid Dynamics Cfd ◽  
Cfd Method ◽  
Level Analysis

A system level thermal analysis is performed by employing the computational fluid dynamics (CFD) method on a large telecommunication rack. Each rack consists of two identical shelves located on the top-to-bottom orientation. Each shelf includes one fan tray with 6 fans, 3 card cages with a total of 50 printed circuit boards (PCBs). Air enters from the front of the shelf, and then makes a 90-degree turn upwards through PCBs, and finally turns another 90-degree to exit the system from the back of the shelf. The system level analysis is performed independently on each shelf. The main purpose of the analysis is to determine the air flow rate to individual printed circuit boards as well as the air temperature distribution in the system. The computed flow rate for individual PCBs is then used for a detailed board analysis to predict the component temperatures of individual boards.

scholarly journals Multi-Scale Thermal Analysis for Design of SiC-Based Medium Voltage Motor Drive

2019 ◽  
Author(s):  
J. Emily Cousineau ◽  
Kevin Bennion ◽  
Karun Potty ◽  
He Li ◽  
Risha Na ◽  
...  
Keyword(s):  
Thermal Analysis ◽  
System Level ◽  
Motor Drive ◽  
Cfd Simulations ◽  
Medium Voltage ◽  
Pin Fin ◽  
Multi Scale ◽  
Fea Model ◽  
Fast Running ◽  
Time Required

Abstract This paper describes a multi-scale thermal analysis approach for the design of an air-cooled 1.7-kV SiC MOSFET-based medium-voltage variable-speed motor drive. The scope of the models and required efficient and flexible thermal models to be developed. Two modeling techniques are described that significantly reduced model run time and enabled more complex models to be run faster while retaining needed accuracy. The first technique uses the effectiveness-NTU method to extract convection boundary conditions from a CFD model that can be applied to a fast-running FEA model. The second is a porous media technique that enables system-level CFD simulations that incorporate effects from heat exchangers (e.g., pin fin heat sinks) that run in a fraction of the time required for fully resolved CFD simulations. The multi-scale approach to the thermal analysis enabled fast and accurate simulation for the converter design ranging from the die level up to the full system with 36 submodules. The modeling results were validated against experimental data from system tests performed by OSU.

scholarly journals Transient Electro-Thermal Coupled Modeling of Three-Phase Power MOSFET Inverter during Load Cycles

Materials ◽  
2021 ◽  
Vol 14 (18) ◽  
pp. 5427
Author(s):  
Hsien-Chie Cheng ◽  
Siang-Yu Lin ◽  
Yan-Cheng Liu
Keyword(s):  
Thermal Analysis ◽  
Network Model ◽  
Circuit Simulation ◽  
Parameter Extraction ◽  
Junction Temperature ◽  
System Level ◽  
Power Losses ◽  
Coupling Analysis ◽  
Thermal Network ◽  
Three Phase

This study introduces an effective and efficient dynamic electro-thermal coupling analysis (ETCA) approach to explore the electro-thermal behavior of a three-phase power metal–oxide–semiconductor field-effect transistor (MOSFET) inverter for brushless direct current motor drive under natural and forced convection during a six-step operation. This coupling analysis integrates three-dimensional electromagnetic simulation for parasitic parameter extraction, simplified equivalent circuit simulation for power loss calculation, and a compact Foster thermal network model for junction temperature prediction, constructed through parametric transient computational fluid dynamics (CFD) thermal analysis. In the proposed ETCA approach, the interactions between the junction temperature and the power losses (conduction and switching losses) and between the parasitics and the switching transients and power losses are all accounted for. The proposed Foster thermal network model and ETCA approach are validated with the CFD thermal analysis and the standard ETCA approach, respectively. The analysis results demonstrate how the proposed models can be used as an effective and efficient means of analysis to characterize the system-level electro-thermal performance of a three-phase bridge inverter.

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