Effectiveness of Cooperative Learning: Jigsaw and Cross Word Puzzles for Semiconductor Devices Course

Author(s):  
H. Hussin ◽  
A. Abdul Aziz ◽  
A. H. Hussin ◽  
S. Muda
Author(s):  
Peter Pegler ◽  
N. David Theodore ◽  
Ming Pan

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.


Author(s):  
Terrence Reilly ◽  
Al Pelillo ◽  
Barbara Miner

The use of transmission electron microscopes (TEM) has proven to be very valuable in the observation of semiconductor devices. The need for high resolution imaging becomes more important as the devices become smaller and more complex. However, the sample preparation for TEM observation of semiconductor devices have generally proven to be complex and time consuming. The use of ion milling machines usually require a certain degree of expertise and allow a very limited viewing area. Recently, the use of an ultra high resolution "immersion lens" cold cathode field emission scanning electron microscope (CFESEM) has proven to be very useful in the observation of semiconductor devices. Particularly at low accelerating voltages where compositional contrast is increased. The Hitachi S-900 has provided comparable resolution to a 300kV TEM on semiconductor cross sections. Using the CFESEM to supplement work currently being done with high voltage TEMs provides many advantages: sample preparation time is greatly reduced and the observation area has also been increased to 7mm. The larger viewing area provides the operator a much greater area to search for a particular feature of interest. More samples can be imaged on the CFESEM, leaving the TEM for analyses requiring diffraction work and/or detecting the nature of the crystallinity.


2002 ◽  
Vol 61 (3) ◽  
pp. 139-151 ◽  
Author(s):  
Céline Darnon ◽  
Céline Buchs ◽  
Fabrizio Butera

When interacting on a learning task, which is typical of several academic situations, individuals may experience two different motives: Understanding the problem, or showing their competences. When a conflict (confrontation of divergent propositions) emerges from this interaction, it can be solved either in an epistemic way (focused on the task) or in a relational way (focused on the social comparison of competences). The latter is believed to be detrimental for learning. Moreover, research on cooperative learning shows that when they share identical information, partners are led to compare to each other, and are less encouraged to cooperate than when they share complementary information. An epistemic vs. relational conflict vs. no conflict was provoked in dyads composed by a participant and a confederate, working either on identical or on complementary information (N = 122). Results showed that, if relational and epistemic conflicts both entailed more perceived interactions and divergence than the control group, only relational conflict entailed more perceived comparison activities and a less positive relationship than the control group. Epistemic conflict resulted in a more positive perceived relationship than the control group. As far as performance is concerned, relational conflict led to a worse learning than epistemic conflict, and - after a delay - than the control group. An interaction between the two variables on delayed performance showed that epistemic and relational conflicts were different only when working with complementary information. This study shows the importance of the quality of relationship when sharing information during cooperative learning, a crucial factor to be taken into account when planning educational settings at the university.


1991 ◽  
Vol 36 (10) ◽  
pp. 860-861
Author(s):  
Morton Deutsch
Keyword(s):  

2017 ◽  
Vol 3 (4) ◽  
pp. 257-271 ◽  
Author(s):  
Jeremy E. Sawyer ◽  
Rita Obeid ◽  
Dennis Bublitz ◽  
Anna M. Schwartz ◽  
Patricia J. Brooks ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document