Large-Area <jats:formula formulatype="inline"> &lt;img src="/images/tex/812.gif" alt="\hbox {MgB}_{2}"&gt; </jats:formula> Films Fabricated by Scaled-Up Hybrid Physical–Chemical Vapor Deposition

A scaled-up hybrid physical-chemical vapor deposition (HPCVD) method has been developed to fabricate large-area high-quality magnesium diboride (MgB2) thin films. The 2-in-diameter MgB2thin films on sapphire (0001) show uniform superconducting properties, includingTc~ 39 K, residual-resistivity ratio ~ 14, andJc(4.2 K) ~ 107A/cm2. X-ray diffraction showed that the films are epitaxial withc-axis normal to the film surface. The film properties are uniform across the 2-in substrate.

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CMOS-Compatible Synthesis of Large-Area, High-Mobility Graphene by Chemical Vapor Deposition of Acetylene on Cobalt Thin Films

ACS Nano ◽

10.1021/nn202012m ◽

2011 ◽

Vol 5 (9) ◽

pp. 7198-7204 ◽

Cited By ~ 82

Author(s):

Michael E. Ramón ◽

Aparna Gupta ◽

Chris Corbet ◽

Domingo A. Ferrer ◽

Hema C. P. Movva ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

High Mobility ◽

Chemical Vapor ◽

Large Area ◽

Cobalt Thin Films ◽

Cmos Compatible

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High quality MgB2thick films and large-area films fabricated by hybrid physical–chemical vapor deposition with a pocket heater

Superconductor Science and Technology ◽

10.1088/0953-2048/21/8/085019 ◽

2008 ◽

Vol 21 (8) ◽

pp. 085019 ◽

Cited By ~ 10

Author(s):

S F Wang ◽

Ke Chen ◽

C-H Lee ◽

A Soukiassian ◽

D R Lamborn ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Large Area ◽

High Quality ◽

Physical Chemical

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Nanoscale disorder in high critical field, carbon-doped MgB2 hybrid physical-chemical vapor deposition thin films

Applied Physics Letters ◽

10.1063/1.2775088 ◽

2007 ◽

Vol 91 (8) ◽

pp. 082513 ◽

Cited By ~ 16

Author(s):

Y. Zhu ◽

D. C. Larbalestier ◽

P. M. Voyles ◽

A. V. Pogrebnyakov ◽

X. X. Xi ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Critical Field ◽

Vapor Deposition ◽

Chemical Vapor ◽

Carbon Doped ◽

Physical Chemical ◽

Doped Mgb2

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Nanoscale Disorder in MgB2 Thin Films Grown by Hybrid Physical-Chemical Vapor Deposition

Microscopy and Microanalysis ◽

10.1017/s1431927608081488 ◽

2008 ◽

Vol 14 (S2) ◽

pp. 212-213

Author(s):

Y Zhu ◽

D Larbalestier ◽

A Gurevich ◽

XX Xi ◽

PM Voyles

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

New Mexico ◽

Vapor Deposition ◽

Chemical Vapor ◽

Physical Chemical ◽

Mgb2 Thin Films

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008

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Graphene field-effect transistors using large-area monolayer graphene grown by chemical vapor deposition on Co thin films

69th Device Research Conference ◽

10.1109/drc.2011.5994446 ◽

2011 ◽

Cited By ~ 1

Author(s):

M. E. Ramon ◽

A. Gupta ◽

C. Corbet ◽

D. A. Ferrer ◽

H.C.P. Movva ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Monolayer Graphene ◽

Large Area

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Superconducting MgB2 thin films on silicon carbide substrates by hybrid physical–chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.1563840 ◽

2003 ◽

Vol 82 (13) ◽

pp. 2097-2099 ◽

Cited By ~ 116

Author(s):

X. H. Zeng ◽

A. V. Pogrebnyakov ◽

M. H. Zhu ◽

J. E. Jones ◽

X. X. Xi ◽

...

Keyword(s):

Thin Films ◽

Silicon Carbide ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Physical Chemical ◽

Mgb2 Thin Films

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HIGH QUALITY FULLY IN-SITU MgB2 THIN FILMS OBTAINED BY DC MAGNETRON SPUTTERING

International Journal of Modern Physics B ◽

10.1142/s0217979203016601 ◽

2003 ◽

Vol 17 (04n06) ◽

pp. 779-784 ◽

Cited By ~ 3

Author(s):

M. G. MAGLIONE ◽

F. CHIARELLA ◽

R. DI CAPUA ◽

R. VAGLIO ◽

M. SALVATO ◽

...

Keyword(s):

Magnetic Field ◽

Thin Films ◽

Magnetron Sputtering ◽

Target Surface ◽

Residual Resistivity ◽

Precursor Film ◽

Large Area ◽

Residual Resistivity Ratio ◽

Resistivity Ratio

MgB 2 thin films were grown in-situ at INFM- University of Naples by a magnetron sputtering technique in a UHV system (10-7 Pa) equipped with 3 focused 2′′ magnetron sources (a stoichiometric MgB 2 and metallic Mg and B targets by Superconducting Components Inc.). The substrates (sapphire or MgO) were placed "on axis" at 7 cm from the target surface on the surface of a molybdenum heater that could be operated up to 1000°C under vacuum. Best results were obtained codepositing MgB 2 and Mg at equal sputtering power (500W) for 10 min on cold substrates, resulting in a Mg rich Mg-B precursor film. The films were then annealed inhyphen;situ at 830°C for 10 min in a In sealed Nb box in presence of saturated Mg vapor. The process is highly reproducible and can be easily scaled to produce large area films. The resulting films were about 1μm thick, with 100nm surface roughness as measured by AFM Resistive transition showed a maximum T c of 35 K and a transition width lower than 0.5 K. The residual resistivity ratio was 1.6 for the best sample. Resistivity measurements in external magnetic field up to 8 T have been performed both in parallel and perpendicular configuration. The upper critical magnetic field vs. temperature behavior has been determined from the experimental data and the superconducting anisotropy has been calculated for samples with different T c .

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