An 11 mA Capacitor-Less LDO with 3.08 nA Quiescent Current and SSF-Based Adaptive Biasing

Author(s):  
Oscar Pereira-Rial ◽  
Paula Lopez ◽  
Juan M. Carrillo ◽  
Victor M. Brea ◽  
Diego Cabello
Author(s):  
Suresh Alapati ◽  
Patri Sreehari Rao

<p>This paper presents a fast transient and low noise capacitor-less LDO using multiple loops. The proposed LDO exploits adaptive biasing, bulk modulation and a fast reacting control loop for achieving high performance striking reasonable tradeoffs among quiescent current, transient response and stability. The proposed LDO offers a load regulation of 0.095µV/mA while consuming quiescent current of 16 µA. It exhibits a load transient of 134.23mV with a settling time of 240.8ns against 0 to 100mA load variation with 40pF output capacitor. It exhibits an integrated noise of 31.027 pV2 /Hz at 10 Hz for a maximum load current of 100mA. The proposed LDO is designed using 0.18-µm 1P6 CMOS process.</p>


2021 ◽  
Vol 11 (3) ◽  
pp. 31
Author(s):  
Anindita Paul ◽  
Mario Renteria-Pinon ◽  
Jaime Ramirez-Angulo ◽  
Ricardo Bolaños-Pérez ◽  
Héctor Vázquez-Leal ◽  
...  

An approach to implement single-ended power-efficient static class-AB Miller op-amps with symmetrical and significantly enhanced slew-rate and accurately controlled output quiescent current is introduced. The proposed op-amp can drive a wide range of resistive and capacitive loads. The output positive and negative currents can be much higher than the total op-amp quiescent current. The enhanced performance is achieved by utilizing a simple low-power auxiliary amplifier with resistive local common-mode feedback that increases the quiescent power dissipation by less than 10%. The proposed class AB op-amp is characterized by significantly enhanced large-signal dynamic, static current efficiency, and small-signal figures of merits. The dynamic current efficiency is 15.6 higher, the static current efficiency is 8.9 times higher, and the small-signal figure of merit is 2.3 times higher than the conventional class-A op-amp. A global figure of merit that determines an op-amp’s ultimate speed is 6.33 times higher than the conventional class A op-amp.


2011 ◽  
Vol 20 (01) ◽  
pp. 1-13 ◽  
Author(s):  
CHENCHANG ZHAN ◽  
WING-HUNG KI

A CMOS low quiescent current low dropout regulator (LDR) with high power supply rejection (PSR) and without large output capacitor is proposed for system-on-chip (SoC) power management applications. By cascoding a power NMOS with the PMOS pass transistor, high PSR over a wide frequency range is achieved. The gate-drive of the cascode NMOS is controlled by an auxiliary LDR that draws only 1 μA from a small charge pump, thus helping in reducing the quiescent current. Adaptive biasing is employed for the multi-stage error amplifier of the core LDR to achieve high loop gain hence high PSR at low frequency, low quiescent current at light load and high bandwidth at heavy load. A prototype of the proposed high-PSR LDR is fabricated using a standard 0.35 μm CMOS process, occupying an active area of 0.066 mm2. The lowest supply voltage is 1.6 V and the preset output voltage is 1.2 V. The maximum load current is 10 mA. The measured worst-case PSR at full load without using large output capacitor is -22.7 dB up to 60 MHz. The line and load regulations are 0.25 mV/V and 0.32 mV/mA, respectively.


Author(s):  
Yumiko Tsuruya ◽  
Tetsuya Hirose ◽  
Yuji Osaki ◽  
Nobutaka Kuroki ◽  
Masahiro Numa ◽  
...  

2014 ◽  
Vol 50 (10) ◽  
pp. 771-773 ◽  
Author(s):  
Han‐Xiao Du ◽  
Xin‐Quan Lai ◽  
Cong Liu ◽  
Yuan Chi

2012 ◽  
Vol 591-593 ◽  
pp. 2632-2635
Author(s):  
Lee Chu Liang ◽  
Roslina Mohd Sidek

A low power low-dropout (LDO) voltage regulator with self-reduction quiescent current is proposed in this paper. This proposed capacitorless LDO for Silicon-on-Chip (SoC) application has introduced a self-adjustable low-impedance circuitry at the output of LDO to attain stability critically during low output load current (less than a few hundred of micro-ampere). When the LDO load current increases, it reduces the LDO output impedance and moved the pole towards higher frequency away from the dominant pole and improving the system stability. When this happen, less amount of quiescent current is needed for the low-impedance circuitry to sustain the low output impedance. In this proposed LDO, the quiescent current that been used to sustain the low output impedance will be self-reduced when the output load current increases. Thus, the reduction of quiescent current at low output load current has tremendously improved the efficiency. The simulation results have shown a promising stability at low load current 0~1mA. The dropout voltage for this LDO is only 100mV at 1.2V supply. The proposed LDO is validated using Silterra 0.13μm CMOS process model and designed with high efficiency at low output load current.


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