scholarly journals Aging Monitoring Method of Bond Wires Based on Phase-Frequency Characteristics of Differential Mode Conducted Interference Signal for IGBT Module

2021 ◽  
pp. 1-1
Author(s):  
Chengpeng Chu ◽  
Chao Dong ◽  
Jing Hu ◽  
Mingxing Du ◽  
Ziwei Ouyang
Keyword(s):  
Frequency Characteristics ◽  
Interference Signal ◽  
Differential Mode ◽  
Monitoring Method ◽  
Igbt Module ◽  
Bond Wires

scholarly journals An Anti-Interference Online Monitoring Method for IGBT Bond Wire Aging

Electronics ◽  
2021 ◽  
Vol 10 (12) ◽  
pp. 1449
Author(s):  
Chuankun Wang ◽  
Yigang He ◽  
Yunfeng Jiang ◽  
Lie Li
Keyword(s):  
Online Monitoring ◽  
Junction Temperature ◽  
Collector Current ◽  
Monitoring Method ◽  
Insulated Gate Bipolar Transistor ◽  
Igbt Module ◽  
Three Phase ◽  
Bond Wires ◽  
Bond Wire ◽  
Three Phase Inverter

Due to the constant changes of the environment and load, the insulated-gate bipolar transistor (IGBT) module is subjected to a large amount of junction temperature (Tj) fluctuations, which often leads to damage to the bond wires. The monitoring parameters of IGBTs are often coupled with Tj, which increases the difficulty of monitoring IGBTs’ health status online. In this paper, based on the collector current (Ic) and collector-emitter on-state voltage (Vce_on) online monitoring circuit, an online monitoring method of IGBT bond wire aging against interference is proposed. First, the bond wire aging model is established, and the Vce_on is selected as the monitoring parameter. Secondly, taking a three-phase inverter circuit as an example, the Vce_on and Ic waveforms of the IGBT module are monitored in real time, and the process of online monitoring is introduced accordingly. Finally, the experimental results indicate that the method proposed in this paper can accurately identify the aging state of IGBT bond wires under different conditions.

Monitoring Bond Wires Fatigue of Multichip IGBT Module Using Time Duration of the Gate Charge

2021 ◽  
Vol 36 (1) ◽  
pp. 888-897
Author(s):  
Kaihong Wang ◽  
Luowei Zhou ◽  
Pengju Sun ◽  
Xiong Du
Keyword(s):  
Time Duration ◽  
Igbt Module ◽  
Bond Wires ◽  
Gate Charge

scholarly journals An Aging-Degree Evaluation Method for IGBT Bond Wire with Online Multivariate Monitoring

Energies ◽  
2019 ◽  
Vol 12 (20) ◽  
pp. 3962 ◽  
Author(s):  
Zilang Hu ◽  
Xinglai Ge ◽  
Dong Xie ◽  
Yichi Zhang ◽  
Bo Yao ◽  
...  
Keyword(s):  
Evaluation Method ◽  
Junction Temperature ◽  
Normal Operation ◽  
Monitoring Method ◽  
Bonding Wire ◽  
Insulated Gate Bipolar Transistor ◽  
Igbt Module ◽  
Bond Wire ◽  
Artificial Neural Network Ann ◽  
Multivariate Monitoring

The aging fracture of bonding wire is one of the main reasons for failure of insulated gate bipolar transistor (IGBT). This paper proposes an online monitoring method for IGBT bonding wire aging that does not interfere with the normal operation of the IGBT module. A quantitative analysis of aging degree was first performed, and the results of multivariate and univariate monitoring were compared. Based on the relationship between the monitoring parameters and the aging of the IGBT bonding wire, gradual damage of the IGBT bond wire was implemented to simulate aging failure and obtain the aging data. Moreover, the change of junction temperature was considered to regulate monitoring parameters. Then, the aging degree was evaluated by an artificial neural network (ANN) algorithm. The experimental results showed the effectiveness of the proposed method.

A Health Monitoring Method for Bond Wires in IGBT Modules Based on Voltage Ringing Characteristics

2019 ◽  
Vol 66 (9) ◽  
pp. 3953-3960 ◽  
Author(s):  
Lei Jing ◽  
Mingxing Du ◽  
Kexin Wei ◽  
William Gerard Hurley
Keyword(s):  
Health Monitoring ◽  
Monitoring Method ◽  
Igbt Modules ◽  
Bond Wires

Investigation of gate voltage oscillations in an IGBT module after partial bond wires lift-off

2013 ◽  
Vol 53 (2) ◽  
pp. 282-287 ◽  
Author(s):  
Luowei Zhou ◽  
Shengqi Zhou ◽  
Mingwei Xu
Keyword(s):  
Gate Voltage ◽  
Igbt Module ◽  
Bond Wires ◽  
Lift Off

Condition Monitoring IGBT Module Bond Wires Fatigue Using Short-Circuit Current Identification

2017 ◽  
Vol 32 (5) ◽  
pp. 3777-3786 ◽  
Author(s):  
Pengju Sun ◽  
Can Gong ◽  
Xiong Du ◽  
Yingzhou Peng ◽  
Bo Wang ◽  
...  
Keyword(s):  
Condition Monitoring ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Igbt Module ◽  
Bond Wires

scholarly journals A Method to Monitor IGBT Module Bond Wire Failure Using On-State Voltage Separation Strategy

Energies ◽  
2019 ◽  
Vol 12 (9) ◽  
pp. 1791 ◽  
Author(s):  
Qingyi Kong ◽  
Mingxing Du ◽  
Ziwei Ouyang ◽  
Kexin Wei ◽  
William Gerard Hurley
Keyword(s):  
Thermal Parameter ◽  
Junction Temperature ◽  
Collector Current ◽  
Insulated Gate Bipolar Transistor ◽  
Dependent Part ◽  
Igbt Modules ◽  
Igbt Module ◽  
Bond Wires ◽  
Bond Wire ◽  
Separation Strategy

On-state voltage is an important thermal parameter for insulated gate bipolar transistor (IGBT) modules. It is employed widely to predict failure in IGBT module bond wires. However, due to restrictions in work environments and measurement methods, it is difficult to ensure the measurement accuracy for the on-state voltage under practical working conditions. To address this problem, an on-state voltage separation strategy is proposed for the IGBT modules with respect to the influence of collector current (Ic) and junction temperature (Tj). This method involves the separation of the on-state voltage into a dependent part and two independent parts during the IGBT module bond wire prediction. Based on the proposed separation strategy, the independent parts in the failure prediction can be removed, making it possible to directly monitor the voltage variations caused by bond wire failure. The experimental results demonstrate that the proposed diagnosis strategy can accurately predict the bond wire failure stage in an IGBT module under different conditions.

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