Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors

2011 ◽  
Vol 58 (8) ◽  
pp. 2209-2217 ◽  
Author(s):  
Antonio Martinez ◽  
Manuel Aldegunde ◽  
Natalia Seoane ◽  
Andrew R. Brown ◽  
John R. Barker ◽  
...  
Keyword(s):  
Quantum Transport ◽  
Cross Sections ◽  
Silicon Nanowire ◽  
Channel Length ◽  
Nanowire Transistors ◽  
Transport Study ◽  
The Impact ◽  
Random Discrete Dopants

Influence of discrete dopant on quantum transport in silicon nanowire transistors

2012 ◽  
Vol 70 ◽  
pp. 92-100 ◽  
Author(s):  
Nima Dehdashti Akhavan ◽  
Isabelle Ferain ◽  
Ran Yu ◽  
Pedram Razavi ◽  
Jean-Pierre Colinge
Keyword(s):  
Quantum Transport ◽  
Silicon Nanowire ◽  
Nanowire Transistors

Comparative Study of Silicon Nanowire Transistors with Triangular-Shaped Cross Sections

2014 ◽  
Author(s):  
Y.B. Zhang ◽  
L. Sun ◽  
H. Xu ◽  
Y.Q. Xia ◽  
J.W. Han ◽  
...  
Keyword(s):  
Comparative Study ◽  
Cross Sections ◽  
Silicon Nanowire ◽  
Nanowire Transistors

Comparative study of silicon nanowire transistors with triangular-shaped cross sections

2015 ◽  
Vol 54 (4S) ◽  
pp. 04DN01 ◽  
Author(s):  
Yi-Bo Zhang ◽  
Lei Sun ◽  
Hao Xu ◽  
Jing-Wen Han ◽  
Yi Wang ◽  
...  
Keyword(s):  
Comparative Study ◽  
Cross Sections ◽  
Silicon Nanowire ◽  
Nanowire Transistors

Material Prospects of Reconfigurable Transistor (RFETs) – From Silicon to Germanium Nanowires

2014 ◽  
Vol 1659 ◽  
pp. 225-230 ◽  
Author(s):  
Jens Trommer ◽  
André Heinzig ◽  
Anett Heinrich ◽  
Paul Jordan ◽  
Matthias Grube ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Silicon Nanowire ◽  
Promising Material ◽  
Germanium Nanowires ◽  
Nanowire Transistors ◽  
Material Solution ◽  
P Type ◽  
The Impact

ABSTRACTReconfigurable nanowire transistors provide the operation of unipolar p-type and n-type FETs freely selectable within a single device. The enhanced functionality is enabled by controlling the currents through two individually gated Schottky junctions. Here we analyze the impact of the Schottky barrier height on the symmetry of Silicon nanowire RFET transfer characteristics and their performance within circuits. Prospective simulations are carried out, indicating that germanium nanowire based RFETs of the same dimensions will show a distinctly increased performance, making them a promising material solution for future reconfigurable electronics.

Sign in / Sign up

Export Citation Format

Share Document