scholarly journals Sputtered ZnO Thin-Film Transistors With Carrier Mobility Over 50 ${\rm cm}^{2}/{\rm Vs}$

2013 ◽  
Vol 60 (10) ◽  
pp. 3424-3429 ◽  
Author(s):  
Christian Brox-Nilsen ◽  
Jidong Jin ◽  
Yi Luo ◽  
Peng Bao ◽  
Aimin M. Song
2015 ◽  
Vol 1731 ◽  
Author(s):  
Chih-Hung Li ◽  
Jian-Zhang Chen ◽  
I-Chun Cheng

ABSTRACTWe investigated the electrical properties of the rf-sputtered HfxZn1-xO/ZnO heterostructures. The thermal annealing on ZnO prior to the HfxZn1-xO deposition greatly influences the properties of the heterostructures. A highly conductive interface formed at the interface between HfxZn1-xO and ZnO thin films as the ZnO annealing temperature exceeded 500°C, leading to the apparent decrease of the electrical resistance. The resistance decreased with an increase of either thickness or Hf content of the HfxZn1-xO capping layer. The Hf0.05Zn0.95O/ZnO heterostructure with a 200-nm-thick 600°C-annealed ZnO exhibits a carrier mobility of 14.3 cm2V-1s-1 and a sheet carrier concentration of 1.93×1013 cm-2; the corresponding values for the bare ZnO thin film are 0.47 cm2V-1s-1 and 2.27×1012 cm-2, respectively. Rf-sputtered HfZnO/ZnO heterostructures can potentially be used to increase the carrier mobility of thin-film transistors in large-area electronics.


2014 ◽  
Vol 35 (12) ◽  
pp. 1266-1268 ◽  
Author(s):  
Yang Geng ◽  
Wen Yang ◽  
Hong-Liang Lu ◽  
Yuan Zhang ◽  
Qing-Qing Sun ◽  
...  

2012 ◽  
Vol 29 (1) ◽  
pp. 018501 ◽  
Author(s):  
Shao-Juan Li ◽  
Xin He ◽  
De-Dong Han ◽  
Lei Sun ◽  
Yi Wang ◽  
...  

2010 ◽  
Vol 96 (21) ◽  
pp. 213303 ◽  
Author(s):  
Marco Marchl ◽  
Andrej W. Golubkov ◽  
Matthias Edler ◽  
Thomas Griesser ◽  
Peter Pacher ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document