High carrier mobility and electrical stability under negative bias illumination stress of ZnO thin-film transistors with N2O plasma treated HfOx gate dielectrics

2013 ◽  
Vol 114 (10) ◽  
pp. 103706 ◽  
Author(s):  
Wei-Yu Chen ◽  
Jiann-Shing Jeng ◽  
Jen-Sue Chen
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Gate Dielectrics ◽  
Negative Bias ◽  
Zno Thin Film ◽  
Electrical Stability ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Negative Bias Illumination Stress

Achieving high carrier mobility exceeding 70 cm2/Vs in amorphous zinc tin oxide thin-film transistors

2017 ◽  
Vol 13 (5) ◽  
pp. 406-411 ◽  
Author(s):  
Sang Tae Kim ◽  
Yeonwoo Shin ◽  
Pil Sang Yun ◽  
Jong Uk Bae ◽  
In Jae Chung ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Oxide Thin Film ◽  
Zinc Tin Oxide ◽  
High Carrier Mobility ◽  
High Carrier

A high carrier-mobility crystalline silicon film directly grown on polyimide using SiCl4/H2 microwave plasma for flexible thin film transistors

2015 ◽  
Vol 3 (28) ◽  
pp. 7513-7522 ◽  
Author(s):  
Ping-Yen Hsieh ◽  
Chi-Young Lee ◽  
Nyan-Hwa Tai
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Microwave Plasma ◽  
Crystalline Silicon ◽  
Silicon Film ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Si Films

Flexible Si-TFTs with a high carrier mobility of 106 cm2 V−1 s−1 are fabricated using SiCl4/H2 microwave plasma for the preparation of crystalline Si films.

An all-organic "soft" thin film transistor with very high carrier mobility

1990 ◽  
Vol 2 (12) ◽  
pp. 592-594 ◽  
Author(s):  
Francis Garnier ◽  
Gilles Horowitz ◽  
Xuezhou Peng ◽  
Denis Fichou
Keyword(s):  
Thin Film ◽  
Carrier Mobility ◽  
Thin Film Transistor ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Soft Thin Film ◽  
Very High

Effect of Bandgap Widening on Negative-Bias Illumination Stress Stability of Oxide Thin-Film Transistors

2021 ◽  
Vol 68 (9) ◽  
pp. 4450-4454
Author(s):  
Caihao Deng ◽  
Linfeng Lan ◽  
Penghui He ◽  
Yaping Li ◽  
Xiao Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Negative Bias ◽  
Negative Bias Illumination Stress

scholarly journals Optimization of the Anodization Processing for Aluminum Oxide Gate Dielectrics in ZnO Thin Film Transistors by Multivariate Analysis

2019 ◽  
Vol 21 (5) ◽  
pp. 370-379 ◽  
Author(s):  
Tiago C. Gomes ◽  
Dinesh Kumar ◽  
Lucas Fugikawa-Santos ◽  
Neri Alves ◽  
Jeff Kettle
Keyword(s):  
Thin Film ◽  
Multivariate Analysis ◽  
Aluminum Oxide ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Zno Thin Film

Evolution of Nanocrystalline Silicon Layers Deposited at 150°C for Thin Film Transistor Channels

2003 ◽  
Vol 769 ◽  
Author(s):  
I-Chun Cheng ◽  
Steven Allen ◽  
Sigurd Wagner
Keyword(s):  
Thin Film ◽  
Carrier Mobility ◽  
Thin Film Transistor ◽  
Structural Evolution ◽  
Nanocrystalline Silicon ◽  
Crystalline Layer ◽  
Electron Field ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Made In

AbstractThin film transistors of nanocrystalline silicon (nc-Si:H) are made in the staggered topgate, bottom-source/drain geometry. To achieve both high carrier mobility and low off current, the nc-Si:H channel material must be kept thin but comprise a contiguous 10-nm thick crystalline layer at its top. We study this electrically most interesting top layer of the nc-Si:H channel film by AFM and SEM. Introducing an nc-Si:H seed layer underneath the TFT promotes the structural evolution of the nc-Si:H channel layer and raises the electron field effect mobility up to 40 cm2V-1s-1.

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