A High-Voltage Single-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor for BiCMOS Integration

2017 ◽  
Vol 64 (7) ◽  
pp. 3019-3022
Author(s):  
Marko Koricic ◽  
Josip Zilak ◽  
Tomislav Suligoj
Keyword(s):  
High Voltage ◽  
Bipolar Transistor ◽  
Horizontal Current ◽  
Surface Field ◽  
Single Emitter ◽  
Reduced Surface

scholarly journals Design of a Low on Resistance High Voltage (120V) Novel 3D NLDMOS with Side Isolation Based on 0.35um BCD Process Technology

2018 ◽  
Vol 201 ◽  
pp. 02004
Author(s):  
Shao-Ming Yang ◽  
Gene Sheu ◽  
Tzu Chieh Lee ◽  
Ting Yao Chien ◽  
Chieh Chih Wu ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
High Voltage ◽  
High Performance ◽  
Power Device ◽  
Simulation Tool ◽  
Process Technology ◽  
Surface Field ◽  
Kirk Effect ◽  
Tcad Simulation ◽  
Reduced Surface

High performance power device is necessary for BCD power device. In this paper, we used 3D Synopsis TCAD simulation tool Sentaurus to develop 120V device and successfully simulated. We implemented in a conventional 0.35um BCDMOS process to present of a novel high side 120V LDMOS have reduced surface field (RESURF) and Liner p-top structure with side isolation technology. The device has been research to achieve a benchmark specific on-resistance of 189 mΩ-mm2 while maintaining horizontal breakdown voltage and vertical isolation voltage both to target breakdown voltage of 120V. In ESOA, we also proposed a better performance of both device without kirk effect.

Designing of Quasi-Modulated Region in 4H-SiC Lateral RESURF MOSFETs

2014 ◽  
Vol 778-780 ◽  
pp. 943-946
Author(s):  
Yuichiro Nanen ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Silicon Carbide ◽  
Metal Oxide ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Surface Field ◽  
Reduced Surface

Characteristics of high-voltage lateral silicon carbide metal-oxide-semiconductor field-effect transistors (MOSFETs) with various reduced surface field (RESURF) structures were simulated. Breakdown voltage was enhanced from 5300 V for single-zone RESURF to 7400 V for two-zone, and to 7600 V for quasi-modulated RESURF MOSFETs.

Design and Implementation of a New Drive Circuit of Monolithic Emitter-Switching Bipolar Transistor (ESBT)

2014 ◽  
Vol 668-669 ◽  
pp. 812-817
Author(s):  
De Hui Lin ◽  
Ping Lou ◽  
Hui Pin Lin
Keyword(s):  
High Voltage ◽  
Input Voltage ◽  
Bipolar Transistor ◽  
Soft Switch ◽  
Design And Implementation ◽  
Three Phase ◽  
Drive Circuit ◽  
Driving Circuit ◽  
Switch Circuit

This paper introduces a kind of monolithic emitter switched bipolar transistor (ESBT) for three-phase rectifier applications and other high voltage applications. This paper proposes an improved driving circuit, combining the soft switch circuit. We made a flyback circuit prototype which the rated power is 80W, and the maximum input voltage is 800V, and compared with the existing driving circuit.

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