Stabilizing Resistive Switching Characteristics by Inserting Indium-Tin-Oxide Layer as Oxygen Ion Reservoir in HfO2-Based Resistive Random Access Memory

2019 ◽  
Vol 66 (3) ◽  
pp. 1276-1280 ◽  
Author(s):  
Po-Hsun Chen ◽  
Yu-Ting Su ◽  
Fu-Chen Chang
2011 ◽  
Vol 1292 ◽  
Author(s):  
Jung Won Seo ◽  
Seung Jae Baik ◽  
Sang Jung Kang ◽  
Koeng Su Lim

ABSTRACTThis report covers the resistive switching characteristics of cross-bar type semi-transparent (or see-through) resistive random access memory (RRAM) devices based on ZnO. In order to evaluate the transmittance of the devices, we designed the memory array with various electrode sizes and spaces between the electrodes. To prevent read disturbance problems due to sneak currents, we employed a metal oxide based p-NiO/n-ZnO diode structure, which exhibited good rectifying characteristics and high forward current density. Based on these results, we found that the combined metal oxide diode/RRAM device could be promising candidate with suppressed read disturbances of cross-bar type ZnO RRAM device.


2015 ◽  
Vol 36 (11) ◽  
pp. 1138-1141 ◽  
Author(s):  
Ji Chen ◽  
Kuan-Chang Chang ◽  
Ting-Chang Chang ◽  
Tsung-Ming Tsai ◽  
Chih-Hung Pan ◽  
...  

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