Roles of Gate Voltage and Stress Power in Self-Heating Degradation of a-InGaZnO Thin-Film Transistors

2021 ◽  
pp. 1-5
Author(s):  
Mengjun Du ◽  
Jinfeng Zhao ◽  
Dongli Zhang ◽  
Huaisheng Wang ◽  
Qi Shan ◽  
...  
Keyword(s):  
Thin Film ◽  
Gate Voltage ◽  
Thin Film Transistors ◽  
Self Heating

Simulation of Thermal Transport in Nanowire Composites for Macro-Electronics Applications

2004 ◽  
Author(s):  
Satish Kumar ◽  
Jayathi Y. Murthy ◽  
M. A. Alam
Keyword(s):  
Thin Film ◽  
Biot Number ◽  
Thermal Transport ◽  
Thin Film Transistors ◽  
Finite Volume Scheme ◽  
Temperature Profiles ◽  
Number Density ◽  
Plastic Substrates ◽  
Self Heating ◽  
Fourier Theory

Thermal transport in thin film transistors (TFTs) composed of nanowires embedded in plastic substrates is considered. Random ensembles of intersecting and contacting wires embedded in a substrate are analyzed using Fourier theory. Heat generation due to self-heating is included. A finite volume scheme is used to obtain the temperature solutions in the wires and substrate. Temperature profiles in the ensemble are investigated as a function of wire number density, wire-contact Biot number as well as the Biot number for heat transfer to the substrate.

Water-Related Instability in Low-Temperature Polycrystalline Silicon Thin-Film Transistors Caused by Self-Heating

2011 ◽  
Vol 50 (3S) ◽  
pp. 03CB04
Author(s):  
Toshiaki Tsuchiya ◽  
Shinzo Tsuboi ◽  
Genshiro Kawachi ◽  
Masakiyo Matsumura
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film ◽  
Self Heating

Fabrication of Transparent Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Operation

2005 ◽  
Vol 902 ◽  
Author(s):  
Eisuke Tokumitsu ◽  
Masaru Senoo ◽  
Etsu Shin
Keyword(s):  
Thin Film ◽  
Indium Tin Oxide ◽  
Gate Voltage ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Quartz Substrate ◽  
Drain Current ◽  
Optical Transmittance ◽  
Gate Insulator ◽  
Current Drain

AbstractWe demonstrate transparent thin film transistors (TFTs) with nonvolatile memory operation using Bi4-xLaxTi3O12 (BLT) as a gate insulator and indium tin oxide (ITO) as a channel. ITO is also used for the gate, source and drain electrodes. Drain current-drain voltage (ID-VD) characteristics of transparent ITO/BLT ferroelectric-gate TFTs exhibit excellent n-channel transistor operations. On current of 0.35 mA was obtained when the applied gate voltage is 6V. On the other hand, the off current of the device is as low as 10-10A, which indicates that the ITO channel is sufficiently depleted by the ferroelectric polarization. In addition, drain current-gate voltage (ID-VG) characteristics demonstrate clear counterclockwise hysteresis loop due to the ferroelectric gate insulator. Optical transmittance of the fabricated device is greater than 60% including the quartz substrate.

Analysis of self-heating related instability in n-channel polysilicon thin film transistors fabricated on polyimide

2009 ◽  
Vol 517 (23) ◽  
pp. 6371-6374 ◽  
Author(s):  
L. Maiolo ◽  
M. Cuscunà ◽  
L. Mariucci ◽  
A. Minotti ◽  
A. Pecora ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Self Heating
Sign in / Sign up

Export Citation Format

Share Document