Simulation of Thermal Transport in Nanowire Composites for Macro-Electronics Applications

Design, Synthesis, and Applications ◽

10.1115/nano2004-46059 ◽

2004 ◽

Author(s):

Satish Kumar ◽

Jayathi Y. Murthy ◽

M. A. Alam

Keyword(s):

Thin Film ◽

Biot Number ◽

Thermal Transport ◽

Thin Film Transistors ◽

Finite Volume Scheme ◽

Temperature Profiles ◽

Number Density ◽

Plastic Substrates ◽

Self Heating ◽

Fourier Theory

Thermal transport in thin film transistors (TFTs) composed of nanowires embedded in plastic substrates is considered. Random ensembles of intersecting and contacting wires embedded in a substrate are analyzed using Fourier theory. Heat generation due to self-heating is included. A finite volume scheme is used to obtain the temperature solutions in the wires and substrate. Temperature profiles in the ensemble are investigated as a function of wire number density, wire-contact Biot number as well as the Biot number for heat transfer to the substrate.

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Characteristics of Indium Tin Zinc Oxide Thin Film Transistors with Plastic Substrates

Korean Journal of Materials Research ◽

10.3740/mrsk.2018.28.4.247 ◽

2018 ◽

Vol 28 (4) ◽

pp. 247-253

Author(s):

Dae-Gyu Yang ◽

Hyoung-Do Kim ◽

Jong-Heon Kim ◽

Hyun-Suk Kim

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Zinc Oxide Thin Film ◽

Plastic Substrates

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In-plane-gate flexible single-crystalline silicon thin-film transistors with high-k gate dielectrics on plastic substrates

AIP Advances ◽

10.1063/1.5045521 ◽

2019 ◽

Vol 9 (1) ◽

pp. 015111 ◽

Cited By ~ 1

Author(s):

Yibo Zhang ◽

Shihui Yu ◽

Kuibo Lan ◽

Lingxia Li ◽

Guoxuan Qin

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Crystalline Silicon ◽

Gate Dielectrics ◽

Single Crystalline Silicon ◽

Silicon Thin Film ◽

Single Crystalline ◽

Plastic Substrates ◽

High K

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Roles of Gate Voltage and Stress Power in Self-Heating Degradation of a-InGaZnO Thin-Film Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3055751 ◽

2021 ◽

pp. 1-5

Author(s):

Mengjun Du ◽

Jinfeng Zhao ◽

Dongli Zhang ◽

Huaisheng Wang ◽

Qi Shan ◽

...

Keyword(s):

Thin Film ◽

Gate Voltage ◽

Thin Film Transistors ◽

Self Heating

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An Investigation of Self-Heating Degradation of Metal Induced Laterally Crystallized N-Type Polysilicon Thin Film Transistors

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual ◽

10.1109/relphy.2007.369574 ◽

2007 ◽

Author(s):

Huaisheng Wang ◽

Mingxiang Wang ◽

Zhenyu Yang ◽

Man Wong

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Self Heating

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Cross-linked poly(hydroxy imide) gate-insulating materials for low-temperature processing of organic thin-film transistors

Journal of Materials Chemistry C ◽

10.1039/c8tc02634c ◽

2018 ◽

Vol 6 (48) ◽

pp. 13359-13366 ◽

Cited By ~ 4

Author(s):

Joo-Young Kim ◽

Ji Whan Kim ◽

Eun Kyung Lee ◽

Jeong-Il Park ◽

Bang-Lin Lee ◽

...

Keyword(s):

Thin Film ◽

Low Temperature ◽

Breakdown Voltage ◽

Thin Film Transistors ◽

Organic Thin Film Transistors ◽

Organic Thin Film ◽

Insulating Materials ◽

Plastic Substrates ◽

Insulating Material ◽

Low Temperature Processing

This paper reports a polymeric gate insulating material of poly(hydroxy imide) cured at the low temperature of 130 °C for the application to organic thin-film transistors on plastic substrates exhibiting high breakdown voltage and no hysteresis.

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Low-Temperature Cross-Linking Benzocyclobutene Based Polymer Dielectric for Organic Thin Film Transistors on Plastic Substrates

The Journal of Organic Chemistry ◽

10.1021/acs.joc.9b02981 ◽

2019 ◽

Vol 85 (1) ◽

pp. 277-283 ◽

Cited By ~ 1

Author(s):

Rawad K. Hallani ◽

Maximilian Moser ◽

Helen Bristow ◽

Maud V. C. Jenart ◽

Hendrik Faber ◽

...

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

Organic Thin Film Transistors ◽

Cross Linking ◽

Organic Thin Film ◽

Plastic Substrates ◽

Polymer Dielectric

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Study of Degradation Phenomenon Due to a Combination of Contamination and Self-Heating in Poly-Si Thin Film Transistors Fabricated by a Low-Temperature Process

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.4213 ◽

2003 ◽

Vol 42 (Part 1, No. 7A) ◽

pp. 4213-4217 ◽

Cited By ~ 20

Author(s):

Satoshi Inoue ◽

Satoshi Takenaka ◽

Tatsuya Shimoda

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

Self Heating ◽

Si Thin Film ◽

Low Temperature Process

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Thin Film Transistors on Plastic Substrates Using Silicon Deposited by Microwave ECR-CVD

MRS Proceedings ◽

10.1557/proc-769-h2.4 ◽

2003 ◽

Vol 769 ◽

Author(s):

Lihong Teng ◽

Wayne A. Anderson

Keyword(s):

Thin Film ◽

Threshold Voltage ◽

Thin Film Transistors ◽

Field Effect ◽

Silicon Films ◽

Subthreshold Swing ◽

Field Effect Mobility ◽

Current Ratio ◽

Saturation Field ◽

Plastic Substrates

AbstractThe properties of thin film transistors (TFT's) on plastic substrates with active silicon films deposited by microwave ECR-CVD were studied. Two types of plastic were used, PEEK and polyimide. The a-Si:H TFT deposited at 200°C on polyimide substrates showed a saturation field effect mobility of 4.5 cm2/V-s, a threshold voltage of 3.7 V, a subthreshold swing of 0.69 V/dec and an ON/OFF current ratio of 7.9×106, while the TFT fabricated on PEEK at 200°C showed a saturation field effect mobility of 3.9 cm2/V-s, a threshold voltage of 4.1 V, a subthreshold swing of 0.73 V/dec and an ON/OFF current ratio of 4×106. Comparison is made to TFT's with the Si deposited at 400°C on glass.

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