Dynamic Supply Voltage Control for PA Output Power Correction Under Variable Loading Scenarios

Application of Soft-switching technique and fuzzy control is discussed to optimize traditional induction cooker controller. Soft-switching technique is used to improve output efficiency of induction cooker. Switch voltage regulation by fuzzy control are used to adjust output power of induction cooker. Soft-switching inverter consists of resonant DC link and LC resonant network. Resonant DC link is used to realize ZVS, and resonant network is used to eliminate harmonics. Fuzzy control based on look-up table is adopted to adjust duty cycle of switch mode regulated power supply, which changes the DC supply voltage, so that amplitude of AC signal inverted by induction cooker is changed to adjust output power of induction cooker according to the requirement, , ensuring the operating temperature aligned with the target temperature.

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A 350-GHz Coupled Stack Oscillator with −0.8 dBm Output Power in 65-nm Bulk CMOS Process

Electronics ◽

10.3390/electronics9081214 ◽

2020 ◽

Vol 9 (8) ◽

pp. 1214

Author(s):

Thanh Dat Nguyen ◽

Jong-Phil Hong

Keyword(s):

Output Power ◽

Supply Voltage ◽

Second Harmonic ◽

Power Level ◽

Cmos Technology ◽

Negative Resistance ◽

Output Power Level ◽

Cmos Process ◽

Frequency Selective ◽

Oscillation Frequencies

This paper presents a push-push coupled stack oscillator that achieves a high output power level at terahertz (THz) wave frequency. The proposed stack oscillator core adopts a frequency selective negative resistance topology to improve negative transconductance at the fundamental frequency and a transformer connected between gate and drain terminals of cross pair transistors to minimize the power loss at the second harmonic frequency. Next, the phases and the oscillation frequencies between the oscillator cores are locked by employing an inductor of frequency selective negative resistance topology. The proposed topology was implemented in a 65-nm bulk CMOS technology. The highest measured output power is −0.8 dBm at 353.2 GHz while dissipating 205 mW from a 2.8 V supply voltage.

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Low Supply Voltage Control Oscillator with Transformer Feedback for Photoplethysmography

2019 28th Wireless and Optical Communications Conference (WOCC) ◽

10.1109/wocc.2019.8770574 ◽

2019 ◽

Author(s):

Wen-Cheng Lai ◽

Sheng-Lyang Jang ◽

Yan-Cu Lin

Keyword(s):

Supply Voltage ◽

Voltage Control ◽

Voltage Control Oscillator ◽

Transformer Feedback ◽

Low Supply Voltage

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Design methodology for a switching-mode RF CMOS power amplifier with an output transformer

International Journal of Microwave and Wireless Technologies ◽

10.1017/s1759078715001415 ◽

2015 ◽

Vol 8 (3) ◽

pp. 471-477

Author(s):

Changhyun Lee ◽

Changkun Park

Keyword(s):

Output Power ◽

Power Amplifier ◽

Design Methodology ◽

Supply Voltage ◽

Cmos Technology ◽

Rf Cmos ◽

Power Transistor ◽

Voltage Output ◽

Switching Mode ◽

Output Transformer

In this study, we propose a design methodology for a switching-mode RF CMOS power amplifier with an output transformer. For a given supply voltage, output power, and target efficiency, the initial values of the transistor size, output inductance, and capacitance can be sequentially determined during the design of the power amplifier. The breakdown voltage of the power transistor is considered in the design methodology. To prove the feasibility of the proposed design methodology, we provide the design example of a 2.4-GHz switching-mode CMOS power amplifier with 180-nm RF CMOS technology. From the measured results, the feasibility of the proposed design methodology is proved.

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An X-Band GaN HEMT Oscillator with Four-Path Inductors

Applied Computational Electromagnetics Society ◽

10.47037/2020.aces.j.350912 ◽

2020 ◽

Vol 35 (9) ◽

pp. 1059-1063 ◽

Cited By ~ 7

Author(s):

Wen-Cheng Lai ◽

Sheng-Lyang Jang

Keyword(s):

Power Consumption ◽

Phase Noise ◽

Output Power ◽

Supply Voltage ◽

Frequency Offset ◽

Gan Hemt ◽

Feedback Network ◽

X Band

An X-band GaN HEMT oscillator implemented with the WIN 0.25 μm GaN HEMT technology is proposed. The oscillator consists of a HEMT amplifier with an LC feedback network with four-path inductors. With the supply voltage of VDD = 2 V, the GaN VCO current and power consumption of the oscillator are 10.8 mA and 21.6mW, respectively. The oscillator can generate single-ended signal at 8.82 GHz and it also supplies output power 1.24 dBm. At 1MHz frequency offset from the carrier the phase noise is 124.95 dBc/Hz. The die area of the GaN HEMT oscillator is 2×1 mm2.

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