scholarly journals A 350-GHz Coupled Stack Oscillator with −0.8 dBm Output Power in 65-nm Bulk CMOS Process

Electronics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 1214
Author(s):  
Thanh Dat Nguyen ◽  
Jong-Phil Hong
Keyword(s):  
Output Power ◽  
Supply Voltage ◽  
Second Harmonic ◽  
Power Level ◽  
Cmos Technology ◽  
Negative Resistance ◽  
Output Power Level ◽  
Cmos Process ◽  
Frequency Selective ◽  
Oscillation Frequencies

This paper presents a push-push coupled stack oscillator that achieves a high output power level at terahertz (THz) wave frequency. The proposed stack oscillator core adopts a frequency selective negative resistance topology to improve negative transconductance at the fundamental frequency and a transformer connected between gate and drain terminals of cross pair transistors to minimize the power loss at the second harmonic frequency. Next, the phases and the oscillation frequencies between the oscillator cores are locked by employing an inductor of frequency selective negative resistance topology. The proposed topology was implemented in a 65-nm bulk CMOS technology. The highest measured output power is −0.8 dBm at 353.2 GHz while dissipating 205 mW from a 2.8 V supply voltage.

scholarly journals A Millimeter-Wave Fundamental Frequency CMOS-Based Oscillator with High Output Power

Electronics ◽  
2019 ◽  
Vol 8 (11) ◽  
pp. 1228 ◽  
Author(s):  
Nguyen ◽  
Park ◽  
Hong
Keyword(s):  
Fundamental Frequency ◽  
Output Power ◽  
Millimeter Wave ◽  
Supply Voltage ◽  
Negative Resistance ◽  
Cmos Process ◽  
High Output Power ◽  
Millimeter Wave Imaging ◽  
Wave Imaging ◽  
High Output

The millimeter-wave imaging approach is a promising candidate to satisfy the unmet needs of real-time biomedical imaging, such as resolution, focal area, and cost. As a part of the endeavor to make millimeter-wave imaging more feasible, this paper presents a CMOS oscillator generating a high output power at the millimeter-wave frequency range, with a high fundamental oscillation frequency. The proposed oscillator adopts a frequency-selective negative resistance topology to improve the negative transconductance and to increase the fundamental frequency of oscillation. The proposed oscillator was implemented in a 65 nm bulk CMOS process. The measured highest output power is –2.2 dBm at 190 GHz while dissipating 100 mW from a 2.8 V supply voltage.

scholarly journals Receiver Designs for Electronic Toll Collection Systems : A Survey

2020 ◽  
pp. 576-581
Author(s):  
Rarika Ravi ◽  
Anu Assis
Keyword(s):  
Dynamic Range ◽  
Supply Voltage ◽  
Automatic Gain Control ◽  
Power Level ◽  
Cmos Technology ◽  
Electronic Toll Collection ◽  
Chip Area ◽  
Advantages And Disadvantages ◽  
Digitally Controlled ◽  
Toll Collection

<p>This paper discusses about different receiver designs adopted so far for various electronic toll collection systems. A comparative analysis based on the discussions is also provided. It shows that each design has it's own advantages and disadvantages compared to others. The main aim of this paper is to identify the most suitable design. The researches shows that the receiver design described in the 5.8GHz digitally controlled DSRC receiver for Chinese electronic toll collection system is the most suitable one. Here all RF, IF blocks and digital baseband for on-chip automatic gain control, are integrated on an RF-SoC. The proposed digitally controlled LNA and mixer circuits are elaborated. The technology used is 0.13μm CMOS technology. The RF block occupies a chip area of 0.75mm2. It consumes 22mA under a 1.5V supply voltage. The bit error rate maintains better than 10-6, the input power level varies from -75dBm to -8dBm. This design provides a receiver sensitivity improvement of at least 25%, and a dynamic range enhancement of at least 12%.</p>

scholarly journals A Two-Stage X-Band 20.7-dBm Power Amplifier in 40-nm CMOS Technology

Electronics ◽  
2020 ◽  
Vol 9 (12) ◽  
pp. 2198
Author(s):  
Zhichao Li ◽  
Shiheng Yang ◽  
Samuel B. S. Lee ◽  
Kiat Seng Yeo
Keyword(s):  
Output Power ◽  
Effective Conductivity ◽  
Building Blocks ◽  
Cmos Technology ◽  
Center Frequency ◽  
Cmos Process ◽  
Two Stage ◽  
Power Added Efficiency ◽  
X Band ◽  
Compact Size

For higher integration density, X-band power amplifiers (PAs) with CMOS technology have been widely discussed in recent publications. However, with reduced power supply voltage and device size, it is a great challenge to design a compact PA with high output power and power-added efficiency (PAE). In the proposed design, a 40-nm standard CMOS process is used for higher integration with other RF building blocks, compared with other CMOS PA designs with larger process node. Transistor cells are designed with neutralization capacitors to increase stability and gain performance of the PA. As a trade-off among gain, output power, and PAE, the transistor cells in driving stage and power stage are biased for class A and class AB operation, respectively. Both transistor cells consist of two transistors working in differential mode. Furthermore, transformer-based matching networks (TMNs) are used to realize a two-stage X-band CMOS PA with compact size. The PA achieves an effective conductivity (EC) of 117.5, which is among the highest in recently reported X-band PAs in CMOS technology. The PA also attains a saturated output power (Psat) of 20.7 dBm, a peak PAE of 22.4%, and a gain of 25.6 dB at the center frequency of 10 GHz under a 1 V supply in 40-nm CMOS.

A 2.3 mW Multi-Frequency Clock Generator with −137 dBc/Hz Phase Noise VCO in 180 nm Digital CMOS Technology

2019 ◽  
Vol 29 (08) ◽  
pp. 2050130 ◽  
Author(s):  
Jagdeep Kaur Sahani ◽  
Anil Singh ◽  
Alpana Agarwal
Keyword(s):  
Phase Noise ◽  
Supply Voltage ◽  
Dead Zone ◽  
Dynamic Logic ◽  
Cmos Technology ◽  
Control Voltage ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Cmos Inverter ◽  
Digital Cmos

A fast phase frequency detector (PFD) and low gain low phase noise voltage-controlled oscillator (VCO)-based phase-locked loop (PLL) design are presented in this paper. PLL works in the frequency range of 0.025–1.6[Formula: see text]GHz, targeting various SoC applications. The proposed PFD, designed using CMOS dynamic logic, is fast and improves the locking time, dead zone and blind zone in the PLL. The standard CMOS inverter gate-based pseudo differential VCO is used in the PLL. Also, CMOS inverter is used as variable capacitor to tune the frequency of VCO with control voltage. The proposed PLL is designed in a 180[Formula: see text]nm CMOS process with supply voltage of 1.8[Formula: see text]V. The phase noise of VCO is [Formula: see text][Formula: see text]dBc/Hz at an offset frequency of 100[Formula: see text]MHz. The reference clock of 25[Formula: see text]MHz synthesizes the output clock of 1.6[Formula: see text]GHz with rms jitter of 0.642[Formula: see text]ps.

scholarly journals DIGITAL CONTROLLED OSCILLATOR (DCO) FOR ALL DIGITAL PHASE-LOCKED LOOP (ADPLL) – A REVIEW

2019 ◽  
Vol 82 (1) ◽  
Author(s):  
Florence Choong ◽  
Mamun Ibne Reaz ◽  
Mohamad Ibrahim Kamaruzzaman ◽  
Md. Torikul Islam Badal ◽  
Araf Farayez ◽  
...  
Keyword(s):  
Supply Voltage ◽  
Complementary Metal Oxide Semiconductor ◽  
Phase Locked Loop ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Process Technology ◽  
Chip Area ◽  
Digital Phase ◽  
Low Power Dissipation

Digital controlled oscillator (DCO) is becoming an attractive replacement over the voltage control oscillator (VCO) with the advances of digital intensive research on all-digital phase locked-loop (ADPLL) in complementary metal-oxide semiconductor (CMOS) process technology. This paper presents a review of various CMOS DCO schemes implemented in ADPLL and relationship between the DCO parameters with ADPLL performance. The DCO architecture evaluated through its power consumption, speed, chip area, frequency range, supply voltage, portability and resolution. It can be concluded that even though there are various schemes of DCO that have been implemented for ADPLL, the selection of the DCO is frequently based on the ADPLL applications and the complexity of the scheme. The demand for the low power dissipation and high resolution DCO in CMOS technology shall remain a challenging and active area of research for years to come. Thus, this review shall work as a guideline for the researchers who wish to work on all digital PLL.

Design methodology for a switching-mode RF CMOS power amplifier with an output transformer

2015 ◽  
Vol 8 (3) ◽  
pp. 471-477
Author(s):  
Changhyun Lee ◽  
Changkun Park
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Design Methodology ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Rf Cmos ◽  
Power Transistor ◽  
Voltage Output ◽  
Switching Mode ◽  
Output Transformer

In this study, we propose a design methodology for a switching-mode RF CMOS power amplifier with an output transformer. For a given supply voltage, output power, and target efficiency, the initial values of the transistor size, output inductance, and capacitance can be sequentially determined during the design of the power amplifier. The breakdown voltage of the power transistor is considered in the design methodology. To prove the feasibility of the proposed design methodology, we provide the design example of a 2.4-GHz switching-mode CMOS power amplifier with 180-nm RF CMOS technology. From the measured results, the feasibility of the proposed design methodology is proved.

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