Spice Modeling of Silicon Nanowire Field-Effect Transistors for High-Speed Analog Integrated Circuits

Reducing the size of silicon devices is accompanied by an increase in the effective rate of electrons, decrease transit time and the transition to a ballistic work.Power consumption is reduced too. Formation of large integrated circuits structures onSi-homotransition reduces their frequency range and performance.Nowadaysproposed several new types of devices and technologies forming of large integrated circuits structures that based on high speeds and mobility of electrons in GaAs, and small size structures.These include, for example, the heterostructure field-effect transistors on a segmented doping, bipolar transistors with wide-emitter, transistor with soulful base, vertical ballistic transistors, devices with flat-doped barriers and hot electron transistors as element base of modern high-speed large integrated circuits.In this article we consider graded-gap technology formatting as bipolar and field-effect transistors, which are the basis of modern high-speedof large integrated circuits structures.

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Electrostatic Discharge Characteristics of SiGe Source/Drain PNN Tunnel FET

Electronics ◽

10.3390/electronics10040454 ◽

2021 ◽

Vol 10 (4) ◽

pp. 454

Author(s):

You Wang ◽

Yu Mao ◽

Qizheng Ji ◽

Ming Yang ◽

Zhaonian Yang ◽

...

Keyword(s):

Integrated Circuits ◽

Computer Aided Design ◽

Field Effect ◽

Electrostatic Discharge ◽

Field Effect Transistors ◽

Test Method ◽

Current Path ◽

Simulation Results ◽

Current Characteristics ◽

Aided Design

Gate-grounded tunnel field effect transistors (ggTFETs) are considered as basic electrostatic discharge (ESD) protection devices in TFET-integrated circuits. ESD test method of transmission line pulse is used to deeply analyze the current characteristics and working mechanism of Conventional TFET ESD impact. On this basis, a SiGe Source/Drain PNN (P+N+N+) tunnel field effect transistors (TFET) was proposed, which was simulated by Sentaurus technology computer aided design (TCAD) software. Simulation results showed that the trigger voltage of SiGe PNN TFET was 46.3% lower, and the failure current was 13.3% higher than Conventional TFET. After analyzing the simulation results, the parameters of the SiGe PNN TFET were optimized. The single current path of the SiGe PNN TFET was analyzed and explained in the case of gate grounding.

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Vertical surround-gated silicon nanowire impact ionization field-effect transistors

Applied Physics Letters ◽

10.1063/1.2720640 ◽

2007 ◽

Vol 90 (14) ◽

pp. 142110 ◽

Cited By ~ 77

Author(s):

M. T. Björk ◽

O. Hayden ◽

H. Schmid ◽

H. Riel ◽

W. Riess

Keyword(s):

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Silicon Nanowire

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AlGaN/GaN HEMTs: RECENT DEVELOPMENTS AND FUTURE DIRECTIONS

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156408005874 ◽

2008 ◽

Vol 18 (04) ◽

pp. 913-922 ◽

Cited By ~ 2

Author(s):

SIDDHARTH RAJAN ◽

UMESH K. MISHRA ◽

TOMÁS PALACIOS

Keyword(s):

Field Effect ◽

High Speed ◽

Digital Circuits ◽

Field Effect Transistors ◽

Rf Power ◽

Power Performance ◽

Future Directions ◽

Recent Developments ◽

Gan Hemts ◽

State Of Art

This paper provides an overview of recent work and future directions in Gallium Nitride transistor research. We discuss the present status of Ga -polar AlGaN / GaN HEMTs and the innovations that have led to record RF power performance. We describe the development of N -polar AlGaN / GaN HEMTs with microwave power performance comparable with state-of-art Ga -polar AlGaN / GaN HEMTs. Finally we will discuss how GaN -based field effect transistors could be promising for a less obvious application: low-power high-speed digital circuits.

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Biologically sensitive field-effect transistors: from ISFETs to NanoFETs

Essays in Biochemistry ◽

10.1042/ebc20150009 ◽

2016 ◽

Vol 60 (1) ◽

pp. 81-90 ◽

Cited By ~ 45

Author(s):

Vivek Pachauri ◽

Sven Ingebrandt

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Label Free ◽

Biomolecular Detection ◽

New Device ◽

Label Free Detection ◽

History Of

Biologically sensitive field-effect transistors (BioFETs) are one of the most abundant classes of electronic sensors for biomolecular detection. Most of the time these sensors are realized as classical ion-sensitive field-effect transistors (ISFETs) having non-metallized gate dielectrics facing an electrolyte solution. In ISFETs, a semiconductor material is used as the active transducer element covered by a gate dielectric layer which is electronically sensitive to the (bio-)chemical changes that occur on its surface. This review will provide a brief overview of the history of ISFET biosensors with general operation concepts and sensing mechanisms. We also discuss silicon nanowire-based ISFETs (SiNW FETs) as the modern nanoscale version of classical ISFETs, as well as strategies to functionalize them with biologically sensitive layers. We include in our discussion other ISFET types based on nanomaterials such as carbon nanotubes, metal oxides and so on. The latest examples of highly sensitive label-free detection of deoxyribonucleic acid (DNA) molecules using SiNW FETs and single-cell recordings for drug screening and other applications of ISFETs will be highlighted. Finally, we suggest new device platforms and newly developed, miniaturized read-out tools with multichannel potentiometric and impedimetric measurement capabilities for future biomedical applications.

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