Band Engineering to Improve Average Subthreshold Swing by Suppressing Low Electric Field Band-to-Band Tunneling With Epitaxial Tunnel Layer Tunnel FET Structure

2016 ◽  
Vol 15 (1) ◽  
pp. 74-79 ◽  
Author(s):  
Pei-Yu Wang ◽  
Bing-Yue Tsui
Keyword(s):  
Electric Field ◽  
Subthreshold Swing ◽  
Band Engineering ◽  
Tunnel Fet ◽  
Band To Band Tunneling ◽  
Tunnel Layer

Subthreshold swing minimization of cylindrical tunnel FET using binary metal alloy gate

2016 ◽  
Vol 91 ◽  
pp. 105-111 ◽  
Author(s):  
Sidhartha Dash ◽  
Girija Shankar Sahoo ◽  
Guru Prasad Mishra
Keyword(s):  
Metal Alloy ◽  
Subthreshold Swing ◽  
Binary Metal ◽  
Tunnel Fet

Simulation of planar single-gate Si tunnel FET with average subthreshold swing of less than 60 mV/decade for 0.3 V operation

2018 ◽  
Vol 57 (4S) ◽  
pp. 04FD09 ◽  
Author(s):  
Kentaro Kukita ◽  
Tadayoshi Uechi ◽  
Junji Shimokawa ◽  
Masakazu Goto ◽  
Yoshinori Yokota ◽  
...  
Keyword(s):  
Subthreshold Swing ◽  
Tunnel Fet

TCAD simulation of planar single-gate Si tunnel FET with average subthreshold swing less than 60 mV/dec for 0.3 V operation

2017 ◽  
Author(s):  
K. Kukita ◽  
T. Uechi ◽  
J. Shimokawa ◽  
M. Goto ◽  
Y. Yokota ◽  
...  
Keyword(s):  
Subthreshold Swing ◽  
Tunnel Fet ◽  
Tcad Simulation
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