scholarly journals Theoretical evaluation of maximum electric field approximation of direct band-to-band tunneling Kane model for low bandgap semiconductors

2016 ◽  
Vol 726 ◽  
pp. 012002 ◽  
Author(s):  
Nguyen Dang Chien ◽  
Chun-Hsing Shih ◽  
Phu Chi Hoa ◽  
Nguyen Hong Minh ◽  
Duong Thi Thanh Hien ◽  
...  
Keyword(s):  
Electric Field ◽  
Field Approximation ◽  
Theoretical Evaluation ◽  
Kane Model ◽  
Low Bandgap ◽  
Band To Band Tunneling ◽  
Direct Band ◽  
Maximum Electric Field ◽  
Bandgap Semiconductors

scholarly journals Analysis of Electric Field and Current Density for Different Electrode Configuration of XLPE Insulation

2018 ◽  
Vol 7 (3.36) ◽  
pp. 127 ◽  
Author(s):  
Nishanthi Sunthrasakaran ◽  
Nor Akmal Mohd Jamail ◽  
Qamarul Ezani Kamarudin ◽  
Sujeetha Gunabalan
Keyword(s):  
Electric Field ◽  
Power System ◽  
Field Distribution ◽  
High Voltage ◽  
Current Density ◽  
Electric Field Distribution ◽  
Electrical Power ◽  
High Electric Field ◽  
Electrode Configuration ◽  
Maximum Electric Field

The most important aspect influencing the circumstance and characteristics of electrical discharges is the distribution of electric field in the gap of electrodes. The study of discharge performance requires details on the variation of maximum electric field around the electrode. In electrical power system, the insulation of high voltage power system usually subjected with high electric field. The high electric field causes the degradation performance of insulation and electrical breakdown start to occur. Generally, the standard sphere gaps widely used for protective device in electrical power equipment. This project is study about the electric field distribution and current density for different electrode configuration with XLPE barrier. Hence, the different electrode configuration influences the electric field distribution. This project mainly involves the simulation in order to evaluate the maximum electric field for different electrode configuration. Finite Element Method (FEM) software has been used in this project to perform the simulation. This project also discusses the breakdown characteristics of the XLPE. The accurate evaluation of electric field distribution and maximum electric field is an essential for the determination of discharge behavior of high voltage apparatus and components. The degree of uniformity is very low for pointed rod-plane when compared to other two electrode configurations. The non- uniform electric distribution creates electrical stress within the surface of dielectric barrier. As a conclusion, when the gap distance between the electrodes increase the electric field decrease.  

ON OPTIMUM PUPIL FIELDS WITH MAXIMUM ELECTRIC FIELD COMPONENT IN FOCUS

2010 ◽  
Vol 19 (01) ◽  
pp. 189-201
Author(s):  
H. P. URBACH ◽  
S. F. PEREIRA ◽  
D. J. BROER
Keyword(s):  
Electric Field ◽  
Field Component ◽  
Optical Axis ◽  
Focal Point ◽  
Longitudinal Component ◽  
Electric Field Component ◽  
Incident Power ◽  
Entrance Pupil ◽  
Maximum Electric Field ◽  
High Na Lens

The field in the entrance pupil of a high NA lens can be optimized such that, for given incident power, the electric field component in a given direction in the focal point is maximum. If the field component is chosen parallel to the optical axis, the longitudinal component is maximized and it is found that the optimum longitudinal component is narrower than the Airy spot. We discuss how this can be used to obtain higher resolution in photolithography when a resist is used that is sensitive to only the longitudinal component. We describe a proposition for realizing such resist.

The Electrical and Optical Properties of Amorphous Silicon Alloys by Plasma-Enhanced CVD Method

1989 ◽  
Vol 165 ◽  
Author(s):  
G. H. Lin ◽  
M. Kapur ◽  
J. O'M. Bockris
Keyword(s):  
Amorphous Silicon ◽  
Chemical Vapor ◽  
Elemental Content ◽  
Photovoltaic Devices ◽  
Alloying Element ◽  
Silicon Thin Film ◽  
Electrical And Optical Properties ◽  
Silicon Alloys ◽  
Low Bandgap ◽  
Bandgap Semiconductors

AbstractHigh and low bandgap amorphous silicon thin film alloys (a-Si:Al, a-Si:Se, a-Si:S, and a-Si:Ga) were prepared by plasma-enhanced chemical vapor deposition. It was found that Al and Ga amorphous silicon alloys are low bandgap materials whereas a:SiS and a:SiSe are high bandgap semiconductors. The optical band gap of these systems could be changed from 1.0 eV to 2.0 eV, depending on the alloying element and its concentration in the film. The dark to light conductivity ratio was measured. The elemental content and distribution was analyzed by the SIMS and EPMA techniques. The results show that some of the amorphous silicon alloys studied are promising materials for multi-bandgap photovoltaic devices.

Parametric Analysis of an Optical Log-Spiral Nano-Antenna for Infrared Energy Harvesting

2020 ◽  
Vol 35 (10) ◽  
pp. 1183-1191
Author(s):  
Abdulrahman Alhomrani ◽  
Ali Yahyaoui ◽  
Anas Al Hashmi ◽  
Ameni Mersani ◽  
Majed Nour ◽  
...  
Keyword(s):  
Energy Harvesting ◽  
Electric Field ◽  
Electromagnetic Waves ◽  
Substrate Thickness ◽  
Frequency Range ◽  
Initial Angle ◽  
Spiral Antenna ◽  
Incident Wave Angle ◽  
Maximum Electric Field ◽  
Wave Angle

In this paper, we present the design of a spiral nano-antenna dedicated to infrared energy harvesting at 28.3 THz. A comprehensive, detailed parametric study of key parameters such as the initial angle at the origin arm, width of the spiral arms, gap between the two arms, thickness of substrate, length of substrate, thickness of patch and number of turns of the nano-antenna is also presented and discussed in order to harvest maximum electric field in the gap of the spiral antenna in the frequency range of 28 – 29 THz. The maximum electric field is simulated at 28.1, 28.3, 28.5 and 28.7 THz. A variation of the electric field of the antenna for different value of incident wave angle at the resonance frequency 28.3 THz has been simulated. The main advantages of the studied structure are its ability to reach high confined electric field within its gap, its wideband behavior around the operating frequency 28.3 THz, and its insensitivity to polarization of incident electromagnetic waves.

A Study of Antiferromagnetic-Pinned Multiferroic Composites Nano Read Head

2016 ◽  
Author(s):  
Salinee Choowitsakunlert ◽  
Rardchawadee Silapunt ◽  
Hideki Yokoi
Keyword(s):  
Magnetic Field ◽  
Electric Field ◽  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Piezoelectric Response ◽  
Potential Candidate ◽  
Zirconate Titanate ◽  
Read Head ◽  
Maximum Electric Field

This paper presents a study of the effect of antiferromagnetic (AFM) integration on the nano AFM-pinned multiferroic (MF) composites structure. The nano MF composites structure is a potential candidate for a future magnetic read head. The simulation of the AFM/ferromagnetic (FM) bilayers characteristics and the evaluation of the magnetoelectric (ME) effect induced in the 1-dimensional (1D) L-T mode model of AFM-pinned structure of AFM/FM/Ferroelectric (FE)/FM/AFM are performed. FM, FE, and two types of AFM materials are Terfenol-D, lead zirconate titanate (PZT), and PtMn and Cr2O3, respectively. The magnetoelectric (ME) effect is investigated using the 1D standard square law. Magnetic-field induced strain in the FM layer, piezoelectric response of the PZT layer, and the ME coefficient are determined. Specifically, the influence of AFM on the MF composites structure for various AFM thicknesses is of interest. It is found that the maximum electric field and potential across the PZT layer are achieved at 2.7 nm thick of PtMn. The result is well agreed by associated magnetic field-induced strain and ME coefficient.

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