Correlating the density of trap-states and the field-effect performance in metal-oxide thin-film transistors with high-k gate dielectrics via a trap-limited conduction method

2021 ◽  
pp. 1-1
Author(s):  
Mochamad Januar ◽  
Chun Wen Cheng ◽  
Wen-Kai Lin ◽  
Vito Vito ◽  
Meng-Chyi Wu ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Gate Dielectrics ◽  
Oxide Thin Film ◽  
Trap States ◽  
High K ◽  
Metal Oxide Thin Film ◽  
Limited Conduction

scholarly journals Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors

Materials ◽  
2017 ◽  
Vol 10 (6) ◽  
pp. 612 ◽  
Author(s):  
Jae Heo ◽  
Seungbeom Choi ◽  
Jeong-Wan Jo ◽  
Jingu Kang ◽  
Ho-Hyun Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film ◽  
Mobility Solution

Solution-processed lanthanum-doped Al2O3 gate dielectrics for high-mobility metal-oxide thin-film transistors

2018 ◽  
Vol 660 ◽  
pp. 814-818 ◽  
Author(s):  
Jaeyoung Kim ◽  
Seungbeom Choi ◽  
Jeong-Wan Jo ◽  
Sung Kyu Park ◽  
Yong-Hoon Kim
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film
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