scholarly journals Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices

2018 ◽  
Vol 65 (1) ◽  
pp. 256-261 ◽  
Author(s):  
A. F. Witulski ◽  
R. Arslanbekov ◽  
A. Raman ◽  
R. D. Schrimpf ◽  
A. L. Sternberg ◽  
...  
Keyword(s):  
Schottky Diode ◽  
High Voltage ◽  
Single Event ◽  
Power Devices

Analysis of Deep Level and Oxide Interface Defects Using 100V HF Schottky Diodes and MOS CV for Silicon and 4H SiC HV MOSFETs, Advanced Power Electronics, and RF ASIC

MRS Advances ◽  
2019 ◽  
Vol 4 (44-45) ◽  
pp. 2377-2382
Author(s):  
J Pan ◽  
S. Afroz ◽  
N. Crain ◽  
W. Henning ◽  
J. Oliver ◽  
...  
Keyword(s):  
Power Electronics ◽  
Schottky Diode ◽  
High Voltage ◽  
Deep Level ◽  
Schottky Diodes ◽  
Wide Bandgap ◽  
Doping Profile ◽  
Power Devices ◽  
Oxide Interface ◽  
Interfacial Defects

AbstractIn this paper we report high voltage MOS and Schottky Diode CV techniques for silicon and SiC power devices. 4H Silicon carbide is a wide bandgap semiconductor suitable for high voltage power electronics and RF applications due to high avalanche breakdown critical electric field, and thermal conductivity. The performance of various power devices, which may include MOSFET and Static Induction Transistor (SIT), can be affected by the deep level traps in the substrate and the oxide interfacial defects. We have characterized deep level trap (High Voltage Schottky Diode HF CV) and oxide interface trap densities (High Voltage HF MOS CV), measured the device channel doping profile for both 4H SiC and silicon, gate metal workfunction, and simulated the effects on DC/AC performance.

Defect engineering in SiC technology for high-voltage power devices

2020 ◽  
Vol 13 (12) ◽  
pp. 120101
Author(s):  
Tsunenobu Kimoto ◽  
Heiji Watanabe
Keyword(s):  
High Voltage ◽  
Defect Engineering ◽  
Power Devices

scholarly journals Portable DC Supply Based on SiC Power Devices for High-Voltage Marx Generator

Electronics ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 313
Author(s):  
Jacek Rąbkowski ◽  
Andrzej Łasica ◽  
Mariusz Zdanowski ◽  
Grzegorz Wrona ◽  
Jacek Starzyński
Keyword(s):  
High Voltage ◽  
Specific Area ◽  
Input Voltage ◽  
Marx Generator ◽  
Power Devices ◽  
Laboratory Setup ◽  
High Voltage Gain ◽  
Main Components ◽  
Two Stages ◽  
Very High

The paper describes major issues related to the design of a portable SiC-based DC supply developed for evaluation of a high-voltage Marx generator. This generator is developed to be a part of an electromagnetic cannon providing very high voltage and current pulses aiming at the destruction of electronics equipment in a specific area. The portable DC supply offers a very high voltage gain: input voltage is 24 V, while the generator requires supply voltages up to 50 kV. Thus, the system contains two stages designed on the basis of SiC power devices operating with frequencies up to 100 kHz. At first, the input voltage is boosted up to 400 V by a non-isolated double-boost converter, and then a resonant DC-DC converter with a special transformer elevates the voltage to the required level. In the paper, the main components of the laboratory setup are presented, and experimental results of the DC supply and whole system are also shown.

Design Considerations of Packaging a High Voltage Current Switch

2015 ◽  
Author(s):  
Ankan De ◽  
Adam Morgan ◽  
Subhashish Bhattacharya ◽  
Douglas C. Hopkins
Keyword(s):  
High Voltage ◽  
Power Devices ◽  
Variable Parameters ◽  
Package Design ◽  
Current Switch ◽  
Density Distributions ◽  
Design Considerations ◽  
Parasitic Parameters ◽  
Electric Potentials ◽  
Switch Design

In this paper an attempt has been made to demonstrate various package design considerations to accommodate series connection of high voltage Si-IGBT (6500V/25A die) and SiC-Diode (6500V/25A die). The effects of connecting the cathode of the series diode to the collector of the IGBT versus connecting the emitter of the IGBT to the anode of the series diode has been analyzed in regards to gate terminal operation and the parasitic line inductance of the structure. ANSYS Q3D/MAXWELL software have been used to analyze and extract parasitic inductance and capacitances in the package along with electromagnetic fields, electric potentials, and current density distributions throughout the package for variable parameters. SIMPLIS-SIMETRIX is used to simulate typical switch behavior for different parasitic parameters under hard switched conditions. Various simulation results have then been used to redesign and justify the optimized package structure for the final current switch design. The thermal behavior of such a package is also conducted in COMSOL in order to ensure that the thermal ratings of the power devices is not exceeded, and to understand where potentially harmful hotspots could arise and estimate the maximum attainable frequency of operation. The main motivation of this work is to enumerate detailed design considerations for packing a high voltage current switch package.

Junction technology in SiC for high-voltage power devices

2013 ◽  
Author(s):  
Tsunenobu Kimoto ◽  
Koutarou Kawahara ◽  
Hiroki Niwa ◽  
Takafumi Okuda ◽  
Jun Suda
Keyword(s):  
High Voltage ◽  
Power Devices

Wide Bandgap Semiconductor Power Devices

1997 ◽  
Vol 483 ◽  
Author(s):  
T. P. Chow ◽  
N. Ramungul ◽  
M. Ghezzo
Keyword(s):  
High Voltage ◽  
Wide Bandgap ◽  
Power Device ◽  
Experimental Demonstration ◽  
Power Devices ◽  
Process Technology ◽  
Power Semiconductor ◽  
Wide Bandgap Semiconductor ◽  
Simulated Performance ◽  
Device Structures

AbstractThe present status of high-voltage power semiconductor switching devices is reviewed. The choice and design of device structures are presented. The simulated performance of the key devices in 4H-SiC is described. The progress in high-voltage power device experimental demonstration is described. The material and process technology issues that need to be addressed for device commercialization are discussed.

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