Full Field Temperature Measurement of Specular Wafers During Rapid Thermal Processing

2007 ◽  
Vol 20 (2) ◽  
pp. 137-142 ◽  
Author(s):  
Joshua D. Maxwell ◽  
Yan Qu ◽  
John R. Howell
Keyword(s):  
Temperature Measurement ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Full Field ◽  
Field Temperature

Difference between Wafer Temperature and Thermocouple Reading during rapid Thermal Processing

1998 ◽  
Vol 525 ◽  
Author(s):  
T. Borca-Tasciuc ◽  
D. A. Achimov ◽  
G. Chen
Keyword(s):  
Temperature Measurement ◽  
Thermophysical Properties ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Simple Analytical Model ◽  
Calibration Standard ◽  
Wafer Temperature ◽  
Thermocouple Reading ◽  
The Difference ◽  
Thermocouple Temperature

ABSTRACTThermocouples are often used as a calibration standard for rapid thermal processing. Although it has been recognized that the thermocouple temperature can be different from the wafer temperature, the magnitude of the temperature difference is difficult to quantify. In this work, we present a simple analytical model to demonstrate the difference between the thermocouple temperature and the true wafer temperature. The results show that a large difference can exist between the thermocouple and the wafer temperature. This is because the optical and thermophysical properties of the thermocouple and the glue material are different from those of the wafer. The model results show that temperature measurement becomes more accurate if fine diameter thermocouple wires with very low emissivity are used.

Temperature Measurement Issues in Rapid Thermal Processing

1997 ◽  
Vol 470 ◽  
Author(s):  
D. P. DeWitt ◽  
F. Y. Sorrell ◽  
J. K. Elliott
Keyword(s):  
Temperature Measurement ◽  
Thermal Processing ◽  
Radiation Effects ◽  
Temperature Scale ◽  
Rapid Thermal Processing ◽  
Radiative Properties ◽  
Spectral Radiance ◽  
Roughness Effects ◽  
Thermal Radiative Properties ◽  
Stray Radiation

ABSTRACTReliable radiometrie temperature measurement has been a major challenge in making rapid thermal processing (RTP) more widely accepted. In order to meet road map requirements involving temperature uncertainty, uniformity and control, new techniques must be demonstrated and/or existing measurement methods must be substantially improved. Critical aspects of radiometrie methods for temperature measurement are centered about the topics: radiative and optical properties of the wafers including layered systems, surface roughness effects, and reflected irradiation from lamp banks and chamber walls. The systematic method for inferring temperature is rooted in the measurement equation which relates the radiometer output to the exitent spectral radiance from the target which reaches the detector and prescribes the roles that emissivity variability and stray radiation have on the result. An overview is provided on the knowledge base for optical and thermal radiative properties. Methods for reducing emissivity and stray radiation effects are summarized. Calibration procedures necessary to assure that the in-chamber or local temperature scale is traceable to the International Temperature Scale (ITS-90) are discussed. The issues which can impact improved temperature measurement practice are summarized.

Meeting RTP Temperature Accuracy Requirements: Measurement and Calibrations at Nist

1998 ◽  
Vol 525 ◽  
Author(s):  
F. J. Lovas ◽  
B. K. Tsai ◽  
C. E. Gibson
Keyword(s):  
Uncertainty Analysis ◽  
Temperature Measurement ◽  
Line Width ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Temperature Calibration ◽  
Technical Challenge ◽  
Technology Roadmap ◽  
Radiometric Temperature Measurement ◽  
National Technology

ABSTRACTAlthough radiometric temperature measurement in rapid thermal processing (RTP) tools has substantially improved in terms of repeatability and uniformity, it still remains a technical challenge. The 1999 requirements of 180 nm line width technology in the 1997 National Technology Roadmap for Semiconductors (NTRS) imply an uncertainty of ± 2 °C in temperature measurement, which will continue the challenge in temperature measurement. In this paper we will discuss the NIST absolute radiometric temperature calibration, measurements, and uncertainty analysis.

Laser Ultrasonic Instrumentation for Accurate Temperature Measurement of Silicon Wafers in Rapid Thermal Processing Systems

1998 ◽  
Vol 525 ◽  
Author(s):  
Dan Klimek ◽  
Brian Anthonyt ◽  
Agostino Abbate ◽  
Petros Kotidis
Keyword(s):  
Temperature Measurement ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Thickness Variation ◽  
Laser Ultrasonic ◽  
Ultrasonic Methods ◽  
Wafer Thickness ◽  
Accurate Temperature ◽  
Accurate Temperature Measurement

ABSTRACTResults are presented that demonstrate the use of laser ultrasonic methods to determine the temperature of silicon wafers under conditions consistent with applications in the RTP industry. The results show that it is possible to measure the temperature of Si(100) wafers to an accuracy approaching ± 1°C (1σ) even with wafer thickness variation over a range of 2 to 3 percent.

In-situ emissivity and temperature measurement during rapid thermal processing (RTP)

1992 ◽  
Vol 260 ◽  
Author(s):  
P. Vandenabeele ◽  
R. J. Schreutelkamp ◽  
K. Maex ◽  
C. Vermeiren ◽  
W. Coppye
Keyword(s):  
Thin Film ◽  
Temperature Measurement ◽  
Measurement Technique ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Temperature Determination ◽  
Optical Detector ◽  
Accurate Temperature ◽  
Temperature Measurement Technique

ABSTRACTA prototype RTP system has been developed which allows for in-situ emissivity and temperature measurements. The wafer emissivity is measured by using an optical detector at a wavelength of 2.4 μm and by modulation of the lamp power. This method permits accurate temperature determination in the range from 400 to 1200°C, independent of wafer backside roughness, backside layers, and transmit tance. The feasibility of the temperature measurement technique is demonstrated by using wafers with built-in thermocouples and highly As-doped wafers with different backside roughnesses or layers. The emissivity variations during processing can also be used to study thin film reactions in-situ. This is demonstrated for Co silicidation using probing wavelengths varying from 0.6 to 3.2 μm.

Model Based Measurement in Advanced Rapid Thermal Processing

2008 ◽  
Vol 573-574 ◽  
pp. 403-413
Author(s):  
Christoph Merkl ◽  
Rolf Bremensdorfer
Keyword(s):  
Thermal Radiation ◽  
Temperature Measurement ◽  
Physical Modeling ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Physical Models ◽  
Wavelength Band ◽  
Background Illumination ◽  
Temperature Changes ◽  
Heating Source

Temperature measurement by means of a pyrometer is affected by changes in the background illumination. Physical modeling is a very effective method to discern the origin of radiation contributions and separate the thermal radiation emitted by the object of interest from parasitic radiation. An observer algorithm making use of physical models was successfully applied to infrared pyrometry for rapid thermal processing. Rapid thermal processing is characterized by fast temperature changes in the range of several hundred degree per second. The heating source typically emits light within a broad wavelength band ranging from visible to infrared. Especially in rapid thermal processors that apply heat to both sides of a silicon wafer, this light is partially picked up by the pyrometer sensor. As a consequence these types of systems require methods to handle the fast changing radiation contribution of the heating source to the pyrometer signal.

Effects of Reflective Surfaces on Silicon Emissivity and Temperature Measurements

1996 ◽  
Vol 429 ◽  
Author(s):  
H. Xu ◽  
J. C. Sturm
Keyword(s):  
Temperature Measurement ◽  
Working Conditions ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Back Side ◽  
Front Side ◽  
Temperature Errors ◽  
Practical Implications ◽  
Error Dependence ◽  
Reflective Surfaces

AbstractThe effects of front-side reflective surfaces on the emissivity and temperature measurement of silicon wafers in a Rapid Thermal Processing chamber with backside heating are examined through optics modeling. Two schemes are contrasted. In (1), the pyrometry detector looks at the back-side of the wafer; in (2), it looks at the front-side of the wafer. In both cases, the temperature errors occur when the reflector's reflectivity deviates from unity. However, the error dependence on the reflector reflectivity exhibits interesting differences in these two schemes. Under the working conditions proposed in this paper, a non-ideal reflector introduces a bigger temperature error in the “backside-detector” scheme than in the “front-detector” scheme. Practical implications of these results are also discussed.

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