Random Work-Function-Induced Threshold Voltage Fluctuation in Metal-Gate MOS Devices by Monte Carlo Simulation

2012 ◽  
Vol 25 (2) ◽  
pp. 266-271 ◽  
Author(s):  
Yiming Li ◽  
Hui-Wen Cheng
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Work Function ◽  
Threshold Voltage ◽  
Metal Gate ◽  
Voltage Fluctuation ◽  
Mos Devices

Atomic layer deposition of HfxAlyCz as a work function material in metal gate MOS devices

2014 ◽  
Vol 32 (1) ◽  
pp. 01A118 ◽  
Author(s):  
Albert Lee ◽  
Nobi Fuchigami ◽  
Divya Pisharoty ◽  
Zhendong Hong ◽  
Ed Haywood ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Work Function ◽  
Atomic Layer ◽  
Metal Gate ◽  
Mos Devices ◽  
Layer Deposition

Monte Carlo simulation for ultra-small MOS devices

2000 ◽  
Vol 27 (2-3) ◽  
pp. 137-145 ◽  
Author(s):  
U. Ravaioli ◽  
B. Winstead ◽  
C. Wordelman ◽  
A. Kepkep
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Mos Devices

Suppression of threshold voltage variability of double-gate fin field-effect transistors using amorphous metal gate with uniform work function

2013 ◽  
Vol 102 (16) ◽  
pp. 162104 ◽  
Author(s):  
T. Matsukawa ◽  
Y. X. Liu ◽  
W. Mizubayashi ◽  
J. Tsukada ◽  
H. Yamauchi ◽  
...  
Keyword(s):  
Work Function ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Amorphous Metal ◽  
Double Gate ◽  
Metal Gate
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