Threshold Voltage Fluctuation in 16-nm-Gate FinFETs Induced by Random Work Function of Nanosized Metal Grain
2012 ◽
Vol 12
(6)
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pp. 4485-4488
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2012 ◽
Vol 25
(2)
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pp. 266-271
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1994 ◽
Vol 41
(11)
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pp. 2216-2221
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2009 ◽
Vol 30
(3)
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pp. 243-245
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2013 ◽
Vol 03
(01)
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pp. 17-22
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