scholarly journals Nonlinear dielectric thin films for high-power electric storage with energy density comparable with electrochemical supercapacitors

Author(s):  
Kui Yao ◽  
Shuting Chen ◽  
M. Rahimabady ◽  
M. S. Mirshekarloo ◽  
Shuhui Yu ◽  
...  
1995 ◽  
Vol 31 (21) ◽  
pp. 1814-1815 ◽  
Author(s):  
A.T. Findikoglu ◽  
D.W. Reagor ◽  
Q.X. Jia ◽  
X.D. Wu

2019 ◽  
Vol 45 (17) ◽  
pp. 22523-22527 ◽  
Author(s):  
Zongxin Li ◽  
Hanxing Liu ◽  
Zhonghua Yao ◽  
Juan Xie ◽  
Xixi Li ◽  
...  

2016 ◽  
Vol 498 (1) ◽  
pp. 47-51 ◽  
Author(s):  
Hiroyuki Odagawa ◽  
Koshiro Terada ◽  
Hiroaki Nishikawa ◽  
Takahiko Yanagitani ◽  
Yasuo Cho

2018 ◽  
Author(s):  
K. A. Rubin ◽  
W. Jolley ◽  
Y. Yang

Abstract Scanning Microwave Impedance Microscopy (sMIM) can be used to characterize dielectric thin films and to quantitatively discern film thickness differences. FEM modeling of the sMIM response provides understanding of how to connect the measured sMIM signals to the underlying properties of the dielectric film and its substrate. Modeling shows that sMIM can be used to characterize a range of dielectric film thicknesses spanning both low-k and medium-k dielectric constants. A model system consisting of SiO2 thin films of various thickness on silicon substrates is used to illustrate the technique experimentally.


Sign in / Sign up

Export Citation Format

Share Document