The Design and Optimization of Low-Voltage Pseudo Differential Pair Operational Transconductance Amplifier in 130 nm CMOS Technology

2016 ◽  
Author(s):  
Fadi R. Shahroury ◽  
Ishraq Riad
Keyword(s):  
Low Voltage ◽  
Cmos Technology ◽  
Operational Transconductance Amplifier ◽  
Design And Optimization ◽  
Transconductance Amplifier ◽  
Differential Pair

Low Power Operational Transconductance Amplifier (OTA) with Enhanced DC Gain and Slew-Rate

2013 ◽  
Vol 411-414 ◽  
pp. 1645-1648
Author(s):  
Xiao Zong Huang ◽  
Lun Cai Liu ◽  
Jian Gang Shi ◽  
Wen Gang Huang ◽  
Fan Liu ◽  
...  
Keyword(s):  
Low Voltage ◽  
Cmos Technology ◽  
Optimization Techniques ◽  
Current Mirror ◽  
Slew Rate ◽  
Operational Transconductance Amplifier ◽  
Theory Analysis ◽  
Transconductance Amplifier ◽  
Dc Gain ◽  
Simulation Results

This paper presents a low-voltage differential operational transconductance amplifier (OTA) with enhanced DC gain and slew-rate. Based on the current mirror OTA topology, the optimization techniques are discussed in this work. The proposed structure achieves enhanced DC gain, unit gain frequency (UGF) and slew-rate (SR) with adding four devices. The design of the OTA is described with theory analysis. The OTA operates at the power supply of 1.8V. Simulation results for 0.18μm standard CMOS technology show that the DC gain increases from 60.6dB to 65dB, the UGF is optimized from 2.5MHz to 4.3MHz, the SR is enhanced from 0.88 V/μs to 4.8 V/μs with close power consumption dramatically.

scholarly journals Ultra-Low-Voltage Low-Power Bulk-Driven Quasi-Floating-Gate Operational Transconductance Amplifier

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Ziad Alsibai ◽  
Salma Bay Abo Dabbous
Keyword(s):  
Signal Processing ◽  
Power Consumption ◽  
Low Power ◽  
Low Voltage ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Bias Current ◽  
Floating Gate ◽  
Operational Transconductance Amplifier ◽  
Transconductance Amplifier

A new ultra-low-voltage (LV) low-power (LP) bulk-driven quasi-floating-gate (BD-QFG) operational transconductance amplifier (OTA) is presented in this paper. The proposed circuit is designed using 0.18 μm CMOS technology. A supply voltage of ±0.3 V and a quiescent bias current of 5 μA are used. The PSpice simulation result shows that the power consumption of the proposed BD-QFG OTA is 13.4 μW. Thus, the circuit is suitable for low-power applications. In order to confirm that the proposed BD-QFG OTA can be used in analog signal processing, a BD-QFG OTA-based diodeless precision rectifier is designed as an example application. This rectifier employs only two BD-QFG OTAs and consumes only 26.8 μW.

Bulk linearized CMOS differential pair transconductor for continuous-time OTA-C filter design

2014 ◽  
Vol 62 (1) ◽  
pp. 77-84 ◽  
Author(s):  
B. Pankiewicz ◽  
S. Szczepański ◽  
M. Wójcikowski
Keyword(s):  
Transfer Function ◽  
Analytical Solution ◽  
Input Signal ◽  
Continuous Time ◽  
Low Voltage ◽  
Filter Design ◽  
Current Transfer ◽  
Operational Transconductance Amplifier ◽  
Transconductance Amplifier ◽  
Differential Pair

Abstract In this paper, the MOS differential pair driven simultaneously from gates and bulk terminals is described. An approximated analytical solution of the voltage to current transfer function has been found for the proposed circuit. Four possible combinations of gate and bulk connections of the input signal are presented. Basing on the configuration giving the best linearity, the operational transconductance amplifier (OTA) has been designed and compared, by computer simulations, to the amplifier utilizing the gate driven classic MOS pair. 3rd order filters using the OTAs with linearized and simple MOS pair have been designed and the resulting parameters have been compared. Linearization through the presented simultaneous use of gate and bulk terminals seems to be useful for low voltage applications.

scholarly journals Design of Low Voltage Low Power High Gain Operational Transconductance Amplifier

2021 ◽  
Vol 7 (4) ◽  
pp. 103-110
Author(s):  
Rajesh Durgam ◽  
S. Tamil ◽  
Nikhil Raj
Keyword(s):  
Low Voltage ◽  
Cmos Technology ◽  
High Gain ◽  
Floating Gate ◽  
Operational Transconductance Amplifier ◽  
Linear Mode ◽  
Low Voltage Operation ◽  
Transconductance Amplifier ◽  
Amplifier Design ◽  
Self Cascode

In this paper, a high gain structure of operational transconductance amplifier is presented. For low voltage operation with improved frequency response bulk driven quasi-floating gate MOSFET is used at the input. Further for achieving high gain the modified self cascode structure is used at the output. Compared to conventional self cascode the modified self cascode structure used provides higher transconductance which helps in significant boosting of gain of the amplifier. The modification is achieved by employing quasi-floating gate transistor which helps in scaling of the threshold which as a result increases the drain-to-source voltage of linear mode transistor thus changing it to saturation. This change of mode boosts the effective transconductance of self cascode MOSFET. The proposed operational transconductance amplifier when compared to its conventional showed improvement in DC gain by 30dB and also the unity gain bandwidth increases by 6 fold. The MOS models used for amplifier design are of 0.18µm CMOS technology at supply of 0.5V.

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