Drain current local variability from linear to saturation region in 28nm bulk NMOSFETs

Electronic devices based on carbon nanotubes (CNTs) show potential for circuit miniaturization due to their superior electrical characteristics and reduced dimensionality. The CNT field effect transistors (CNFETs) offer breakthrough in miniaturization of various electronic circuits. Investigation of ballistic transport governing the operation of CNFETs is essential for understanding the device's functional behavior. This investigation is focused on a study of current–voltage characteristics of device behavior in hard saturation region. The investigation utilizes a set of current–voltage characteristics obtained on typical devices. This work is an extension of our earlier work describing application of our approach to Si -MOSFET behavior in the saturation region.

Download Full-text

Analysis and prospect of local variability of drain current in scaled MOSFETs by a new decomposition method

2010 Symposium on VLSI Technology ◽

10.1109/vlsit.2010.5556185 ◽

2010 ◽

Cited By ~ 24

Author(s):

T. Tsunomura ◽

A. Kumar ◽

T. Mizutani ◽

C. Lee ◽

A. Nishida ◽

...

Keyword(s):

Decomposition Method ◽

Drain Current ◽

Local Variability

Download Full-text

Characterization and modeling of drain current local variability in 28 and 14 nm FDSOI nMOSFETs

Solid-State Electronics ◽

10.1016/j.sse.2016.01.002 ◽

2016 ◽

Vol 118 ◽

pp. 4-11 ◽

Cited By ~ 7

Author(s):

E.G. Ioannidis ◽

S. Haendler ◽

E. Josse ◽

N. Planes ◽

G. Ghibaudo

Keyword(s):

Drain Current ◽

Local Variability

Download Full-text

Design and Research on a Novel NEMS Accelerated Sensor Based on GaAs PHEMT

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.97-101.4221 ◽

2010 ◽

Vol 97-101 ◽

pp. 4221-4224

Author(s):

Bin Zhen Zhang ◽

Xiao Juan Jia ◽

Jun Liu ◽

Chen Yang Xue ◽

Ting Ting Hou

Keyword(s):

Electron Mobility ◽

Sensitive Element ◽

High Sensitivity ◽

Drain Current ◽

High Electron Mobility Transistor ◽

Main Process ◽

High Electron ◽

Micro Machining ◽

High Electron Mobility ◽

Saturation Region

A novel nano electro mechanical system (NEMS) accelerated sensor which is based on piezo-resistive effect of GaAs/AlGaAs/InGaAs Pseudomorph-High Electron Mobility Transistor (PHEMT) has been designed and fabricated. The structures of sensor and sensitive element are described in this paper. The main process of Micro-machining is introduced in the text. The static press test has been performed and the testing results show that the NEMS accelerated sensor could sense exterior stress well. Then, a testing circuit is designed to detect the change of drain current under pressure. Through the vibration experiments of the sensor, the sensitivity has been discussed and given out. The conclusion that the sensitivity is maximizing in the saturation region can be got. And the measurement result shows that the sensor has good linearity and high sensitivity with 0.177mV/g in the saturation region.

Download Full-text

Photoresponses of Zinc Tin Oxide Thin-Film Transistor

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2020.17159 ◽

2020 ◽

Vol 20 (3) ◽

pp. 1704-1708

Author(s):

Wei Lun Huang ◽

Chen-Chuan Yang ◽

Sheng-Po Chang ◽

Shoou-Jinn Chang

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Thin Film Transistor ◽

Drain Current ◽

Oxide Thin Film ◽

Current Ratio ◽

Uv Photodetector ◽

Saturation Region ◽

Zinc Tin Oxide ◽

Sputtering System

In this study, the optical and electrical properties of a zinc tin oxide (ZTO) thin-film transistor (TFT) were investigated. The TFT was fabricated using ZTO as the active layer, which was deposited by a radio frequency magnetron sputtering system, to form an ultraviolet (UV) photodetector. The device has a threshold voltage of 0.48 V, field-effect mobility of 1.47 cm2/Vs in the saturation region, on/off drain current ratio of 2×106, and subthreshold swing of 0.45 V/decade in a dark environment. Moreover, as a UV photodetector, the device has a long photoresponse time, responsivity of 0.329 A/W, and rejection ratio of 3.19×104 at a gate voltage of -15 V under illumination of wavelength 300 nm.

Download Full-text