Short-channel performance and mobility analysis of <110>- and <100>-oriented tri-gate nanowire MOSFETs with raised source/drain extensions

Author(s):  
M. Saitoh ◽  
Y. Nakabayashi ◽  
H. Itokawa ◽  
M. Murano ◽  
I. Mizushima ◽  
...  
2002 ◽  
Vol 49 (11) ◽  
pp. 1962-1968 ◽  
Author(s):  
Xiangdong Chen ◽  
Q.C. Ouyang ◽  
Geng Wang ◽  
S.K. Banerjee

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