Experimental study of back gate bias effect and short channel effect in ultra-thin buried oxide tri-gate nanowire MOSFETs
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2015 ◽
Vol 36
(7)
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pp. 648-650
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2001 ◽
Vol 48
(6)
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pp. 1114-1120
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2011 ◽
Vol 59
(3)
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pp. 2368-2371
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