A new integration technology platform: Integrated fan-out wafer-level-packaging for mobile applications

Author(s):  
Douglas Yu
2006 ◽  
Vol 970 ◽  
Author(s):  
Ronald J. Gutmann ◽  
J. Jay McMahon ◽  
Jian-Qiang Lu

ABSTRACTA monolithic, wafer-level three-dimensional (3D) technology platform is described that is compatible with next-generation wafer level packaging (WLP) processes. The platform combines the advantages of both (1) high bonding strength and adaptability to IC wafer topography variations with spin-on dielectric adhesive bonding and (2) process integration and via-area advantages of metal-metal bonding. A copper-benzocyclobutene (Cu-BCB) process is described that incorporates single-level damascene-patterned Cu vias with partially-cured BCB as the bonding adhesive layer. A demonstration vehicle consisting of a two-wafer stack of 2-4 μm diameter vias has shown the bondability of both Cu-to-Cu and BCB-to-BCB. Planarization conditions to achieve BCB-BCB bonding with low-resistance Cu-Cu contacts have been examined, with wafer-scale planarization requirements compared to other 3D platforms. Concerns about stress induced at the tantalum (Ta) liner-to-BCB interface resulting in partial delamination are discussed. While across-wafer uniformity has not been demonstrated, the viability of this WLP-compatible 3D platform has been shown.


2006 ◽  
Vol 970 ◽  
Author(s):  
Piet De Moor ◽  
Wouter Ruythooren ◽  
Philippe Soussan ◽  
Bart Swinnen ◽  
Kris Baert ◽  
...  

ABSTRACTIMEC is focusing its 3D-integration technology developments in 3 distinct directions: 3D-System-in-a-Package (3D-SiP), 3D-Wafer-Level-Packaging (3D-WLP) and 3D-Stacked-IC (3D-SiC). First, the background of these separate approaches will be given. Next the materials and technologies involved, the typical characteristics and the ongoing developments will be discussed. Finally, the roadmap for the 3D-integration in IMEC will be presented.


2012 ◽  
Vol 132 (8) ◽  
pp. 246-253 ◽  
Author(s):  
Mamoru Mohri ◽  
Masayoshi Esashi ◽  
Shuji Tanaka

Author(s):  
A. Orozco ◽  
N.E. Gagliolo ◽  
C. Rowlett ◽  
E. Wong ◽  
A. Moghe ◽  
...  

Abstract The need to increase transistor packing density beyond Moore's Law and the need for expanding functionality, realestate management and faster connections has pushed the industry to develop complex 3D package technology which includes System-in-Package (SiP), wafer-level packaging, through-silicon-vias (TSV), stacked-die and flex packages. These stacks of microchips, metal layers and transistors have caused major challenges for existing Fault Isolation (FI) techniques and require novel non-destructive, true 3D Failure Localization techniques. We describe in this paper innovations in Magnetic Field Imaging for FI that allow current 3D mapping and extraction of geometrical information about current location for non-destructive fault isolation at every chip level in a 3D stack.


2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Che-Jung Chang ◽  
Der-Chiang Li ◽  
Wen-Li Dai ◽  
Chien-Chih Chen

The wafer-level packaging process is an important technology used in semiconductor manufacturing, and how to effectively control this manufacturing system is thus an important issue for packaging firms. One way to aid in this process is to use a forecasting tool. However, the number of observations collected in the early stages of this process is usually too few to use with traditional forecasting techniques, and thus inaccurate results are obtained. One potential solution to this problem is the use of grey system theory, with its feature of small dataset modeling. This study thus uses the AGM(1,1) grey model to solve the problem of forecasting in the pilot run stage of the packaging process. The experimental results show that the grey approach is an appropriate and effective forecasting tool for use with small datasets and that it can be applied to improve the wafer-level packaging process.


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