Glass Wafer Level Packaging Enabled by Laser Induced Deep Etching of Closed Cavities

Author(s):  
Jean-Pol Delrue ◽  
Roman Ostholt ◽  
Norbert Ambrosius
2015 ◽  
Vol 2015 (DPC) ◽  
pp. 001378-001407
Author(s):  
Tim Mobley ◽  
Roupen Keusseyan ◽  
Tim LeClair ◽  
Konstantin Yamnitskiy ◽  
Regi Nocon

Recent developments in hole formations in glass, metalizations in the holes, and glass to glass sealing are enabling a new generation of designs to achieve higher performance while leveraging a wafer level packaging approach for low cost packaging solutions. The need for optical transparency, smoother surfaces, hermetic vias, and a reliable platform for multiple semiconductors is growing in the areas of MEMS, Biometric Sensors, Medical, Life Sciences, and Micro Display packaging. This paper will discuss the types of glass suitable for packaging needs, hole creation methods and key specifications required for through glass vias (TGV's). Creating redistribution layers (RDL) or circuit layers on both sides of large thin glass wafer poses several challenges, which this paper will discuss, as well as, performance and reliability of the circuit layers on TGV wafers or substrates. Additionally, there are glass-to-glass welding techniques that can be utilized in conjunction with TGV wafers with RDL, which provide ambient glass-to-glass attachments of lids and standoffs, which do not outgas during thermal cycle and allow the semiconductor devices to be attached first without having to reflow at lower temperatures. Fabrication challenges, reliability testing results, and performance of this semiconductor packaging system will be discussed in this paper.


2017 ◽  
Vol 14 (4) ◽  
pp. 123-131 ◽  
Author(s):  
John Lau ◽  
Ming Li ◽  
Nelson Fan ◽  
Eric Kuah ◽  
Zhang Li ◽  
...  

This study is for fan-out wafer-level packaging with chip-first (die face-up) formation. Chips with Cu contact-pads on the front side and a die attach film on the backside are picked and placed face-up on a temporary-glass-wafer carrier with a thin layer of light-to-heat conversion material. It is followed by compression molding with an epoxy molding compound (EMC) and a post-mold cure on the reconstituted wafer carrier and then backgrinding the molded EMC to expose the Cu contact-pads of the chips. The next step is to build up the redistribution layers (RDLs) from the Cu contact-pads and then mount the solder balls. This is followed by the debonding of the carrier with a laser and then the dicing of the whole reconstituted wafer into individual packages. A 300-mm reconstituted wafer with a package/die ratio = 1.8 and a die-top EMC cap = 100 μm has also been fabricated (a total of 325 test packages on the reconstituted wafer). This test package has three RDLs; the line width/spacing of the first RDL is 5 μm/5 μm, of the second RDL is 10 μm/10 μm, and of the third RDL is 15 μm/15 μm. The dielectric layer of the RDLs is fabricated with a photosensitive polyimide and the conductor layer of the RDLs is fabricated by electrochemical Cu deposition (ECD).


Author(s):  
J. Wei ◽  
B. K. Lok ◽  
P. C. Lim ◽  
M. L. Nai ◽  
H. J. Lu ◽  
...  

In this paper, the development of wafer level packaging of radio frequency (RF) microelectromechanical system (MEMS) is reported. The packaging process consists of wafer bonding, wafer thinning, via etching, plating, under-bump-metallization (UBM) and bumping processes. 6-inch Si and glass wafers are used in the study. RF MEMS devices are fabricated on Si wafers and sandwiched between Si and glass cap wafers. To maintain the pressure balance between the cavities and outside world after bonding process, Si and glass wafers are anodically bonded at a pressure of 2 bar and a bonding temperature of 400 °C. The cavities are hermetically sealed. The glass wafer of the bonded pair is thinned down to 100 μm using mechanical polishing and chemical etching, the good uniformity of the wafer thickness is maintained with etching process. A layer of Cr/Au is sputtered and patterned as the hard mask for glass via etching process. Via holes with undercut closer to the etching depth are formed in HF+HNO3 acid. After stripping the metal mask, a seed layer of TiW/Cu is deposited using sputtering and plating processes. TiW layer is used to enhance the adhesion of metal and glass. With the completion of the re-routing and via metallization processes, benzocyclobutene (BCB) photoresist is used to planarize via holes and opened for UBM process. Finally, the packaged devices can be assembled using flip chip approach.


2017 ◽  
Vol 2017 (1) ◽  
pp. 000576-000583 ◽  
Author(s):  
John Lau ◽  
Ming Li ◽  
Nelson Fan ◽  
Eric Kuah ◽  
Zhang Li ◽  
...  

Abstract This study is for fan-out wafer-level packaging (FOWLP) with chip-first (die face-up) formation. The chips with Cu contact-pads on the front-side and a die attach film (DAF) on the backside are picked and placed face-up on a temporary glass wafer carrier with a thin layer of light-to-heat conversion (LTHC) material. It is followed by compression molding with epoxy molding compound (EMC) and post mold cure (PMC) on the reconstituted wafer carrier, and then backgrinding the molded EMC to expose the Cu contact-pads of the chips. The next step is to build up the redistribution layers (RDLs) from the Cu contact-pads and then mount the solder balls. Next comes the de-bonding of the carrier with a laser, and then the dicing of the whole reconstituted wafer into individual packages. A 300mm reconstituted wafer with a package/die ratio = 1.8 and a die-top EMC cap = 100μm has also been fabricated (a total of 325 test packages on the reconstituted wafer.) This test package has three RDLs; the line width/spacing of the first RDL is 5μm/5μm, of the second RDL is 10μm/10μm, and of the third RDL is 15μm/15μm. The dielectric layer of the RDLs is fabricated with a photosensitive polyimide (PI) and the conductor layer of the RDLs is fabricated by electrochemical Cu deposition (ECD).


2017 ◽  
Vol 2017 (1) ◽  
pp. 000557-000562 ◽  
Author(s):  
Ming Li ◽  
Qingqian Li ◽  
John Lau ◽  
Nelson Fan ◽  
Eric Kuah ◽  
...  

Abstract The calling for smaller form factor, higher I/O density, higher performance and lower cost has made fan-out wafer level packaging (FOWLP) technology the trend. Good control of die position accuracy and molded wafer warpage are some of the keys to achieve high-yield production for FOWLP. In this study, 10mm×10mm test chips were fabricated and attached (chip-first and die face-up) onto 12 inch glass wafer carriers using die-attach-film (DAF). These reconfigured wafers were compression-molded with selected epoxy molding compounds (EMC). Cu bumps (contact-pads) were revealed by grinding, and redistribution layers (RDLs) were fabricated by lithography and electroplating process. The fan-out wafers were evaluated and characterized after each process step with main focus on the die-misplacement/die shift, re-configured wafer warpage, compression molding defects and RDL fabrication defects. The root causes of these defects were investigated and analyzed, while the possible solutions to overcome the defects were proposed and discussed.


2012 ◽  
Vol 132 (8) ◽  
pp. 246-253 ◽  
Author(s):  
Mamoru Mohri ◽  
Masayoshi Esashi ◽  
Shuji Tanaka

Author(s):  
A. Orozco ◽  
N.E. Gagliolo ◽  
C. Rowlett ◽  
E. Wong ◽  
A. Moghe ◽  
...  

Abstract The need to increase transistor packing density beyond Moore's Law and the need for expanding functionality, realestate management and faster connections has pushed the industry to develop complex 3D package technology which includes System-in-Package (SiP), wafer-level packaging, through-silicon-vias (TSV), stacked-die and flex packages. These stacks of microchips, metal layers and transistors have caused major challenges for existing Fault Isolation (FI) techniques and require novel non-destructive, true 3D Failure Localization techniques. We describe in this paper innovations in Magnetic Field Imaging for FI that allow current 3D mapping and extraction of geometrical information about current location for non-destructive fault isolation at every chip level in a 3D stack.


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