3D IC/Stacked Device Fault Isolation Using 3D Magnetic Field Imaging

2014 ◽  
Author(s):  
A. Orozco ◽  
N.E. Gagliolo ◽  
C. Rowlett ◽  
E. Wong ◽  
A. Moghe ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Fault Isolation ◽  
Wafer Level ◽  
Wafer Level Packaging ◽  
Current Location ◽  
Geometrical Information ◽  
Magnetic Field Imaging ◽  
Silicon Vias ◽  
Non Destructive ◽  
Field Imaging

Abstract The need to increase transistor packing density beyond Moore's Law and the need for expanding functionality, realestate management and faster connections has pushed the industry to develop complex 3D package technology which includes System-in-Package (SiP), wafer-level packaging, through-silicon-vias (TSV), stacked-die and flex packages. These stacks of microchips, metal layers and transistors have caused major challenges for existing Fault Isolation (FI) techniques and require novel non-destructive, true 3D Failure Localization techniques. We describe in this paper innovations in Magnetic Field Imaging for FI that allow current 3D mapping and extraction of geometrical information about current location for non-destructive fault isolation at every chip level in a 3D stack.

3D Magnetic Field Imaging for Non-Destructive Fault Isolation

2013 ◽  
Author(s):  
A. Orozco ◽  
J. Gaudestad ◽  
N.E. Gagliolo ◽  
C. Rowlett ◽  
E. Wong ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Semiconductor Industry ◽  
Fault Isolation ◽  
Wafer Level ◽  
Moore’S Law ◽  
Moore's Law ◽  
Magnetic Field Imaging ◽  
Silicon Vias ◽  
Non Destructive ◽  
Field Imaging

Abstract While transistor gate lengths may continue to shrink for some time, the semiconductor industry faces increasing difficulties to satisfy Moore’s Law. One solution to satisfying Moore’s Law in the future is to stack transistors in a 3-dimensional (3D) formation. In addition, the need for expanding functionality, real-estate management and faster connections has pushed the industry to develop complex 3D package technology which includes System-in-Package (SiP), wafer-level packaging, through-silicon-vias (TSV), stacked-die and flex packages. These stacks of microchips, metal layers and transistors have caused major challenges for existing Fault Isolation (FI) techniques. We describe in this paper innovations in Magnetic Field Imaging for FI which have the potential to allow 3D characterization of currents for non-destructive fault isolation at every chip level in a 3D stack.

3D Fault Isolation in 2.5D Device Comprising High Bandwidth Memory Stacks and Processor Unit Using 3D Magnetic Field Imaging

2016 ◽  
Author(s):  
Antonio Orozco ◽  
Florencia Rusli ◽  
Christopher Rowlett ◽  
Bernice Zee ◽  
Wen Qiu ◽  
...  
Keyword(s):  
Magnetic Field ◽  
High Volume ◽  
Fault Isolation ◽  
Wafer Level ◽  
Wafer Level Packaging ◽  
High Bandwidth ◽  
Magnetic Field Imaging ◽  
Processor Unit ◽  
Silicon Vias ◽  
Field Imaging

Abstract Process challenges and other technology challenges have slowed the implementation of 3D technology into high volume manufacturing well behind the original ITRS expectations. Nevertheless, although full implementation suffered delays, 2.5D through the use of interposer and TSV 3D devices are being already produced, especially in memory devices. These 3D devices (System-in-Package (SiP), wafer-level packaging, Through-Silicon-Vias (TSV), stacked-die, etc.) present major challenges for Failure Analysis (FA) that require novel nondestructive, true 3D Failure Localization techniques. 3D Magnetic field Imaging (MFI), recently introduced, proved to be a natural, useful technique for non-destructively mapping 3D current paths in devices that allowed for submicron vertical resolution. In this paper, we apply this novel technique for 3D localization of an electrically failing complex 2.5D device combining 4Hi-High Bandwidth Memory (HBM) devices and a processor unit on a Si interposer.

Magnetic Field Imaging for Non-Destructive 3D Package Fault Isolation

2014 ◽  
Vol 2014 (1) ◽  
pp. 000635-000640
Author(s):  
Jan Gaudestad ◽  
David Vallett
Keyword(s):  
Magnetic Field ◽  
Product Life Cycle ◽  
Fault Isolation ◽  
Product Returns ◽  
Magnetic Field Imaging ◽  
The One ◽  
In The Beginning ◽  
3D Package ◽  
Non Destructive ◽  
Field Imaging

While microelectronic packages are becoming more and more advanced, the need for non-destructive Electrical Fault Isolation (EFI) becomes ever more critical for the entire product life-cycle ranging from the chip development yield enhancements to failures on product returns. In the beginning of product development, short failures are often the main issue while opens and cracks become the reliability problems after the product reaches the marketplace. In this paper we present Magnetic Field Imaging (MFI) as the one technique that can find all static defects: shorts, leakages and opens in a true non-destructive way.

Magnetic Field Imaging for 3D applications

2014 ◽  
Vol 2014 (DPC) ◽  
pp. 001937-001965
Author(s):  
Jan Gaudestad ◽  
Antonio Orozco
Keyword(s):  
Magnetic Field ◽  
Field Distribution ◽  
Quantum Interference ◽  
Device Fabrication ◽  
Fault Isolation ◽  
Current Path ◽  
Magnetic Field Imaging ◽  
The Magnetic Field ◽  
Field Imaging ◽  
A Current

The challenges that 3D integration present to Failure Analysis require the development of new Fault Isolation techniques that allows for non-destructive, true 3D failure localization. By injecting a current in the device under test (DUT), the current generates a magnetic field around it and this magnetic field is detected by a sensor above the device. Magnetic field imaging (MFI) is a natural candidate for 3D Fault Isolation of complex 3D interconnected devices. This is because the magnetic field generated by the currents in the DUT passes unaffected through all materials used in device fabrication; the presence of multiple metal layers, dies or other opaque layers do not have any impact on the magnetic field signal. The limitations of the technique are not affected by the number of layers in the stacked devise in samples such as wirebonded stacked memory, Through Silicon Via (TSV) stacked die or even package on package (PoP). The sample is raster scanned and magnetic field is acquired at determined steps providing a magnetic image of the field distribution. This magnetic field data is typically processed using a standard inversion technique to obtain a current density map of the device. The resulting current map can then be compared to a circuit diagram, an optical or infrared image, or a non-failing part to determine the fault location. Today, giant-magnetoresistive (GMR) sensors have been added to the Superconducting Quantum Interference Device (SQUID) sensor to allow higher resolution and Fault Isolation (FI) I at die level. Magnetic Field Imaging (MFI), using SQUID as the high sensitive magnetic sensor in combination with a high resolution GMR sensor. A solver algorithm capable of successfully reconstructing a 3D current path based on an acquired magnetic field image from both sensors has been developed. The generic 3D inverse problem has no unique solution. Given a particular 3D magnetic field distribution, there are an infinite number of current path distributions that will result in such magnetic field. This ill-posed problem has restricted, so far, the use of magnetic imaging to 2D. A different kind of 3D solver can be constructed, nevertheless capable of obtaining a single solution. The 3D solver algorithm is not only capable of extracting the 3D current path, but it also provides valuable geometrical information about the device. Accurately being able to position each current segment in a layer allows the FA engineer to follow the current as it vertically moves from one die (or layer) to another. [1,2,3]

Backside Fault Isolation Using a Magnetic Field Imaging System on SRAMs with Indirect Shorts

2000 ◽  
Author(s):  
L. A. Knauss ◽  
B. M. Frazier ◽  
A. B. Cawthorne ◽  
E. Budiarto ◽  
R. Crandall ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Integrated Circuit ◽  
Quantum Interference ◽  
Flip Chip ◽  
Imaging System ◽  
Fault Isolation ◽  
Image Subtraction ◽  
Magnetic Field Imaging ◽  
The Magnetic Field ◽  
Field Imaging

Abstract With the arrival of flip-chip packaging, present tools and techniques are having increasing difficulty meeting failure-analysis needs. Recently a magneticfield imaging system has been used to localize shorts in buried layers of both packages and dies. Until now, these shorts have been powered directly through simple connections at the package. Power shorts are examples of direct shorts that can be powered through connections to Vdd and Vss at the package level. While power shorts are common types of failure, equally important are defects such as logic shorts, which cannot be powered through simple package connections. These defects must be indirectly activated by driving the part through a set of vectors. This makes the magnetic-field imaging process more complicated due to the large background currents present along with the defect current. Magnetic-field imaging is made possible through the use of a SQUID (Superconducting Quantum Interference Device), which is a very sensitive magnetic sensor that can image magnetic fields generated by magnetic materials or currents (such as those in an integrated circuit). The current-density distribution in the sample can then be calculated from the magnetic-field image revealing the locations of shorts and other current anomalies. Presented here is the application of a SQUID-based magnetic-field imaging system for isolation of indirect shorts. This system has been used to investigate shorts in two flip-chip-packaged SRAMs. Defect currents as small as 38 μA were imaged in a background of 1 A. The measurements were made using a lock-in thechnique and image subtraction. The magnetic-field image from one sample is compared with the results from a corresponding infrared-microscope image.

Comparison of Magnetic Field Imaging and Thermal Laser Stimulation for Detecting Electrically Shorting Defects within a Die BEOL

2015 ◽  
Author(s):  
Kevin A. Distelhurst
Keyword(s):  
Magnetic Field ◽  
Capacitor Bank ◽  
Fault Isolation ◽  
Laser Stimulation ◽  
Advantages And Disadvantages ◽  
Magnetic Field Imaging ◽  
Turn Around Time ◽  
Gmr Sensor ◽  
Magneto Resistance ◽  
Field Imaging

Abstract Magnetic Field Imaging (MFI) and Thermal Laser Stimulation (TLS) failure analysis (FA) techniques (e.g. OBIRCH, XIVA, ect.) both have advantages and disadvantages. The obstacles encountered from these techniques may hinder further fault isolation (FI), lengthen turn-around-time and/or detract from actionable results. MFI using a Giant Magneto Resistance (GMR) sensor is compared to TLS techniques to understand the capability of the MFI technique at finding shorting defects. A short within a capacitor bank is successfully isolated using both techniques.

scholarly journals Non-destructive visualization of short circuits in lithium-ion batteries by a magnetic field imaging system

2021 ◽  
Vol 60 (5) ◽  
pp. 056502
Author(s):  
Shogo Suzuki ◽  
Hideaki Okada ◽  
Kai Yabumoto ◽  
Seiju Matsuda ◽  
Yuki Mima ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Lithium Ion Batteries ◽  
Imaging System ◽  
Lithium Ion ◽  
Magnetic Field Imaging ◽  
Short Circuits ◽  
Non Destructive ◽  
Field Imaging

Magnetic Field Imaging on Stacked Flash Memories by Laser Probing and SQUID Scanning

2017 ◽  
Author(s):  
K. Sanchez ◽  
G. Bascoul ◽  
F. Infante ◽  
N. Courjault ◽  
T. Nakamura
Keyword(s):  
Magnetic Field ◽  
Failure Analysis ◽  
Two Dimensions ◽  
Analysis Tool ◽  
Active Device ◽  
Current Path ◽  
3D Packaging ◽  
Magnetic Field Imaging ◽  
The Magnetic Field ◽  
Field Imaging

Abstract Magnetic field imaging is a well-known technique which gives the possibility to study the internal activity of electronic components in a contactless and non-invasive way. Additional data processing can convert the magnetic field image into a current path and give the possibility to identify current flow anomalies in electronic devices. This technique can be applied at board level or device level and is particularly suitable for the failure analysis of complex packages (stacked device & 3D packaging). This approach can be combined with thermal imaging, X-ray observation and other failure analysis tool. This paper will present two different techniques which give the possibility to measure the magnetic field in two dimensions over an active device. Same device and same level of current is used for the two techniques to give the possibility to compare the performance.

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