Research on Threshold Voltage Hysteresis of D-mode and Fully Recessed E-mode AlGaN/GaN MIS-HEMTs with HfO2 Dielectric

Author(s):  
Zicheng Yu ◽  
Chi Sun ◽  
Xiaoyu Ding ◽  
Xing Wei ◽  
Weining Liu ◽  
...  
2020 ◽  
Vol 1004 ◽  
pp. 671-679 ◽  
Author(s):  
Salvatore Cascino ◽  
Mario Saggio ◽  
Alfio Guarnera

In this paper, we report on the simulation results of instability threshold voltage of SiC MOSFET device. Hysteresis cycles of threshold voltage suggest that trapping and detrapping phenomena of electrons from the SiC layer into the oxide traps occur. Experiment suggests that positive threshold voltage shifts (ΔVth) caused by a positive stress voltage to the gate, are almost fully recovered by applying negative stress voltage. This work assumes uniform trap densities extending from SiC interface at a limited depth into oxide.


2019 ◽  
Vol 11 (23) ◽  
pp. 20949-20955 ◽  
Author(s):  
Kyu Hyun Han ◽  
Gwang-Sik Kim ◽  
June Park ◽  
Seung-Geun Kim ◽  
Jin-Hong Park ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document