Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs

The threshold voltage of β-Ga2O3 metal–insulator–semiconductor field-effect transistors is controlled via remote fluorine plasma treatment, enabling an enhancement-mode operation under double gate condition.

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Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V

Applied Physics Express ◽

10.7567/apex.8.036502 ◽

2015 ◽

Vol 8 (3) ◽

pp. 036502 ◽

Cited By ~ 6

Author(s):

Kean B. Lee ◽

Ivor Guiney ◽

Sheng Jiang ◽

Zaffar H. Zaidi ◽

Hongtu Qian ◽

...

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

Blocking Voltage ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Threshold Voltage Instability in Al$_{2}$O$_{3}$/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.110202 ◽

2011 ◽

Vol 50 ◽

pp. 110202 ◽

Cited By ~ 25

Author(s):

Sen Huang ◽

Shu Yang ◽

John Roberts ◽

Kevin J. Chen

Keyword(s):

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Voltage Instability ◽

Electron Mobility Transistors

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Controllable capacitance–voltage hysteresis width in the aluminum–cerium-dioxide–silicon metal–insulator–semiconductor structure: Application to nonvolatile memory devices without ferroelectrics

Applied Physics Letters ◽

10.1063/1.126199 ◽

2000 ◽

Vol 76 (14) ◽

pp. 1881-1883 ◽

Cited By ~ 29

Author(s):

L. Kim ◽

J. Kim ◽

D. Jung ◽

Y. Roh

Keyword(s):

Nonvolatile Memory ◽

Cerium Dioxide ◽

Semiconductor Structure ◽

Memory Devices ◽

Metal Insulator ◽

Hysteresis Width ◽

Metal Insulator Semiconductor ◽

Capacitance Voltage ◽

Nonvolatile Memory Devices ◽

Voltage Hysteresis

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Current–Voltage Characteristics of AlN/GaN Heterostructure Metal Insulator Semiconductor Diode

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.1194 ◽

2001 ◽

Vol 40 (Part 1, No. 3A) ◽

pp. 1194-1198 ◽

Cited By ~ 9

Author(s):

Syunji Imanaga ◽

Fumihiko Nakamura ◽

Hiroji Kawai

Keyword(s):

Semiconductor Diode ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Gan Heterostructure

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AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si3N4Gate Insulator

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.2278 ◽

2003 ◽

Vol 42 (Part 1, No. 4B) ◽

pp. 2278-2280 ◽

Cited By ~ 37

Author(s):

Masaru Ochiai ◽

Mitsutoshi Akita ◽

Yutaka Ohno ◽

Shigeru Kishimoto ◽

Kouichi Maezawa ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Electron Mobility Transistors ◽

Gan Heterostructure

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6.5 V High Threshold Voltage AlGaN/GaN Power Metal-Insulator-Semiconductor High Electron Mobility Transistor Using Multilayer Fluorinated Gate Stack

IEEE Electron Device Letters ◽

10.1109/led.2015.2401736 ◽

2015 ◽

Vol 36 (4) ◽

pp. 381-383 ◽

Cited By ~ 31

Author(s):

Yun-Hsiang Wang ◽

Yung C. Liang ◽

Ganesh S. Samudra ◽

Huolin Huang ◽

Bo-Jhang Huang ◽

...

Keyword(s):

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Threshold ◽

High Electron ◽

Gate Stack ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor

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Characterization of Transient Threshold Voltage Shifts in Enhancement- and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs

2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) ◽

10.1109/edssc.2018.8487160 ◽

2018 ◽

Cited By ~ 2

Author(s):

Miao Cui ◽

Yutao Cai ◽

Sang Lam ◽

Wen Liu ◽

Chun Zhao ◽

...

Keyword(s):

Threshold Voltage ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.4930076 ◽

2015 ◽

Vol 107 (9) ◽

pp. 093507 ◽

Cited By ~ 38

Author(s):

Tian-Li Wu ◽

Denis Marcon ◽

Benoit Bakeroot ◽

Brice De Jaeger ◽

H. C. Lin ◽

...

Keyword(s):

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Threshold Voltage Shift ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Voltage Shift ◽

Electron Mobility Transistors

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Threshold voltage drift of InPn‐channel enhancement mode metal‐insulator‐semiconductor field‐effect transistors

Applied Physics Letters ◽

10.1063/1.99423 ◽

1988 ◽

Vol 52 (6) ◽

pp. 495-497 ◽

Cited By ~ 5

Author(s):

J. G. Johnson ◽

S. R. Forrest ◽

C. R. Zeisse ◽

R. Nguyen

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

Voltage Drift

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