Reduction of Threshold Voltage Hysteresis of MoS2 Transistors with 3-Aminopropyltriethoxysilane Passivation and Its Application for Improved Synaptic Behavior

2019 ◽  
Vol 11 (23) ◽  
pp. 20949-20955 ◽  
Author(s):  
Kyu Hyun Han ◽  
Gwang-Sik Kim ◽  
June Park ◽  
Seung-Geun Kim ◽  
Jin-Hong Park ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Voltage Hysteresis

Modeling of Threshold Voltage Hysteresis in SiC MOSFET Device

2020 ◽  
Vol 1004 ◽  
pp. 671-679 ◽  
Author(s):  
Salvatore Cascino ◽  
Mario Saggio ◽  
Alfio Guarnera
Keyword(s):  
Threshold Voltage ◽  
Instability Threshold ◽  
Positive Threshold ◽  
Voltage Hysteresis ◽  
Simulation Results ◽  
Oxide Traps ◽  
Limited Depth ◽  
Stress Voltage

In this paper, we report on the simulation results of instability threshold voltage of SiC MOSFET device. Hysteresis cycles of threshold voltage suggest that trapping and detrapping phenomena of electrons from the SiC layer into the oxide traps occur. Experiment suggests that positive threshold voltage shifts (ΔVth) caused by a positive stress voltage to the gate, are almost fully recovered by applying negative stress voltage. This work assumes uniform trap densities extending from SiC interface at a limited depth into oxide.

Sign in / Sign up

Export Citation Format

Share Document