scholarly journals SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation

2018 ◽  
Author(s):  
Besar Asllani ◽  
Herve Morel ◽  
Dominique Planson ◽  
Asad Fayyaz ◽  
Alberto Castellazzi
Keyword(s):  
Threshold Voltage ◽  
Short Circuit ◽  
Power Mosfets ◽  
Voltage Hysteresis

scholarly journals The Road to a Robust and Affordable SiC Power MOSFET Technology

Energies ◽  
2021 ◽  
Vol 14 (24) ◽  
pp. 8283
Author(s):  
Hema Lata Rao Maddi ◽  
Susanna Yu ◽  
Shengnan Zhu ◽  
Tianshi Liu ◽  
Limeng Shi ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Short Circuit ◽  
Power Mosfets ◽  
The Road ◽  
Trade Offs ◽  
Voltage Variation ◽  
Higher Power ◽  
Power Handling Capability ◽  
Extrinsic Defects

This article provides a detailed study of performance and reliability issues and trade-offs in silicon carbide (SiC) power MOSFETs. The reliability issues such as threshold voltage variation across devices from the same vendor, instability of threshold voltage under positive and negative gate bias, long-term reliability of gate oxide, screening of devices with extrinsic defects by means of gate voltage, body diode degradation, and short circuit withstand time are investigated through testing of commercial devices from different vendors and two-dimensional simulations. Price roadmap and foundry models of SiC MOSFETs are discussed. Future development of mixed-mode CMOS circuits with high voltage lateral MOSFETs along with 4−6× higher power handling capability compared to silicon circuits has been described.

Critical Technical Issues in High Voltage SiC Power Devices

2008 ◽  
Vol 600-603 ◽  
pp. 895-900 ◽  
Author(s):  
Anant K. Agarwal ◽  
Albert A. Burk ◽  
Robert Callanan ◽  
Craig Capell ◽  
Mrinal K. Das ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Carrier Mobility ◽  
Negative Charge ◽  
State Of The Art ◽  
Power Devices ◽  
Power Mosfets ◽  
Large Numbers ◽  
Technical Issues ◽  
The Difference ◽  
Difficult Issue

In this paper, we review the state of the art of SiC switches and the technical issues which remain. Specifically, we will review the progress and remaining challenges associated with SiC power MOSFETs and BJTs. The most difficult issue when fabricating MOSFETs has been an excessive variation in threshold voltage from batch to batch. This difficulty arises due to the fact that the threshold voltage is determined by the difference between two large numbers, namely, a large fixed oxide charge and a large negative charge in the interface traps. There may also be some significant charge captured in the bulk traps in SiC and SiO2. The effect of recombination-induced stacking faults (SFs) on majority carrier mobility has been confirmed with 10 kV Merged PN Schottky (MPS) diodes and MOSFETs. The same SFs have been found to be responsible for degradation of BJTs.

scholarly journals A Comprehensive Study of Short-Circuit Ruggedness of Silicon Carbide Power MOSFETs

2016 ◽  
Vol 4 (3) ◽  
pp. 978-987 ◽  
Author(s):  
Gianpaolo Romano ◽  
Asad Fayyaz ◽  
Michele Riccio ◽  
Luca Maresca ◽  
Giovanni Breglio ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Short Circuit ◽  
Power Mosfets ◽  
Comprehensive Study

Comprehensive Analysis of Electrical Parameters Degradations for SiC Power MOSFETs Under Repetitive Short-Circuit Stress

2018 ◽  
Vol 65 (12) ◽  
pp. 5440-5447 ◽  
Author(s):  
Jiaxing Wei ◽  
Siyang Liu ◽  
Lanlan Yang ◽  
Jiong Fang ◽  
Ting Li ◽  
...  
Keyword(s):  
Short Circuit ◽  
Comprehensive Analysis ◽  
Electrical Parameters ◽  
Power Mosfets

Impact of Device Structure on Neutron-Induced Single-Event Effect in SiC MOSFETs

2019 ◽  
Vol 963 ◽  
pp. 738-741
Author(s):  
Hiroshi Kono ◽  
Teruyuki Ohashi ◽  
Takao Noda ◽  
Kenya Sano
Keyword(s):  
Threshold Voltage ◽  
Drift Region ◽  
Single Event ◽  
Drain Voltage ◽  
Device Structure ◽  
Pin Diodes ◽  
Power Mosfets ◽  
Single Event Effect ◽  
Significant Difference ◽  
Avalanche Breakdown Voltage

Neutron single event effect (SEE) tolerance of SiC power MOSFETs with different drift region design were evaluated. The SEE is detected over the SEE threshold voltage (VSEE). The failure rate increases exponentially as the drain voltage increases above VSEE. The device with higher avalanche breakdown voltage has higher SEE threshold voltage. The neutron SEE tolerance of MOSFETs and PiN diodes of the same epitaxial structure were also evaluated. There was no significant difference in the neutron SEE tolerance of these devices.

Sign in / Sign up

Export Citation Format

Share Document