Effect of Threshold Voltage Hysteresis on Switching Characteristics of Silicon Carbide MOSFETs

The paper deals with the problem of modelling and analyzing the dynamic properties of a Junction Field Effect Transistor (JFET) made of silicon carbide. An examination of the usefulness of the built-in JFET Simulation Program with Integrated Circuit Emphasis (SPICE) model was performed. A modified model of silicon carbide JFET was proposed to increase modelling accuracy. An evaluation of the accuracy of the modified model was performed by comparison of the measured and calculated capacitance–voltage characteristics as well as the switching characteristics of JFETs.

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Development of 8 mΩ-cm2, 1.8 kV 4H-SiC DMOSFETs

Materials Science Forum ◽

10.4028/www.scientific.net/msf.527-529.1261 ◽

2006 ◽

Vol 527-529 ◽

pp. 1261-1264 ◽

Cited By ~ 10

Author(s):

Sei Hyung Ryu ◽

Sumi Krishnaswami ◽

Brett A. Hull ◽

Bradley Heath ◽

Mrinal K. Das ◽

...

Keyword(s):

Threshold Voltage ◽

Room Temperature ◽

Elevated Temperatures ◽

Gate Length ◽

Gate Bias ◽

Low Loss ◽

Layer Resistance ◽

Switching Characteristics ◽

Mos Gate ◽

Drift Layer

8 mΩ-cm2, 1.8 kV power DMOSFETs in 4H-SiC are presented in this paper. A 0.5 μm long MOS gate length was used to minimize the MOS channel resistance. The DMOSFETs were able to block 1.8 kV with the gate shorted to the source. At room temperature, a specific onresistance of 8 mΩ-cm2 was measured with a gate bias of 15 V. At 150 oC, the specific onresistance increased to 9.6 mΩ-cm2. The increase in drift layer resistance due to a decrease in bulk electron mobility was partly cancelled out by the negative shift in MOS threshold voltage at elevated temperatures. The device demonstrated extremely fast, low loss switching characteristics. A significant improvement in converter efficiency was observed when the 4H-SiC DMOSFET was used instead of an 800 V silicon superjunction MOSFET in a simple boost converter configuration.

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Bipolar resistive switching characteristics of silicon carbide nitride (SiCN)-based devices for nonvolatile memory applications

Ceramics International ◽

10.1016/j.ceramint.2017.04.037 ◽

2017 ◽

Vol 43 (12) ◽

pp. 8970-8974 ◽

Cited By ~ 9

Author(s):

Narendra Singh ◽

Kirandeep Singh ◽

Davinder Kaur

Keyword(s):

Silicon Carbide ◽

Resistive Switching ◽

Nonvolatile Memory ◽

Bipolar Resistive Switching ◽

Switching Characteristics ◽

Memory Applications

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Reliability and Ruggedness of Planar Silicon Carbide MOSFETs

Materials Science Forum ◽

10.4028/www.scientific.net/msf.963.782 ◽

2019 ◽

Vol 963 ◽

pp. 782-787

Author(s):

Kevin Matocha ◽

In Hwan Ji ◽

Sauvik Chowdhury

Keyword(s):

Silicon Carbide ◽

Threshold Voltage ◽

Dielectric Breakdown ◽

Gate Oxide ◽

Time Dependent ◽

Gate Bias ◽

Constant Voltage ◽

Time Dependent Dielectric Breakdown ◽

Planar Silicon ◽

State Of Art

The reliability and ruggedness of Monolith/Littelfuse planar SiC MOSFETs have been evaluated using constant voltage time-dependent dielectric breakdown for gate oxide wearout predictions, showing estimated > 100 year life at VGS=+25V and T=175C. Using extended time high-temperature gate bias, we have shown < 250 mV threshold voltage shifts for > 5000 hours under VGS=+25V and negligible threshold voltage shifts for > 2500 hours under VGS=-10V, both at T=175C. Under unclamped inductive switching, these 1200V, 80 mOhm SiC MOSFETs survive 1000 mJ of avalanche energy, meeting state-of-art ruggedness for 1200V SiC MOSFETs.

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The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters

Crystals ◽

10.3390/cryst10121143 ◽

2020 ◽

Vol 10 (12) ◽

pp. 1143

Author(s):

Maximilian W. Feil ◽

Andreas Huerner ◽

Katja Puschkarsky ◽

Christian Schleich ◽

Thomas Aichinger ◽

...

Keyword(s):

Silicon Carbide ◽

Threshold Voltage ◽

Thermal Conductance ◽

Charge Trapping ◽

Wide Band ◽

Breakdown Field ◽

Parameter Determination ◽

Device Parameter ◽

Measurement Delay ◽

The Impact

Silicon carbide is an emerging material in the field of wide band gap semiconductor devices. Due to its high critical breakdown field and high thermal conductance, silicon carbide MOSFET devices are predestined for high-power applications. The concentration of defects with short capture and emission time constants is higher than in silicon technologies by orders of magnitude which introduces threshold voltage dynamics in the volt regime even on very short time scales. Measurements are heavily affected by timing of readouts and the applied gate voltage before and during the measurement. As a consequence, device parameter determination is not as reproducible as in the case of silicon technologies. Consequent challenges for engineers and researchers to measure device parameters have to be evaluated. In this study, we show how the threshold voltage of planar and trench silicon carbide MOSFET devices of several manufacturers react on short gate pulses of different lengths and voltages and how they influence the outcome of application-relevant pulsed current-voltage characteristics. Measurements are performed via a feedback loop allowing in-situ tracking of the threshold voltage with a measurement delay time of only 1 μs. Device preconditioning, recently suggested to enable reproducible BTI measurements, is investigated in the context of device parameter determination by varying the voltage and the length of the preconditioning pulse.

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Static and Turn-on Switching Characteristics of 4H-Silicon Carbide SITs to 200 C

3rd International Energy Conversion Engineering Conference ◽

10.2514/6.2005-5718 ◽

2005 ◽

Cited By ~ 1

Author(s):

Janis Niedra ◽

Gene Schwarze

Keyword(s):

Silicon Carbide ◽

Turn On ◽

Switching Characteristics

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ENHANCING POWER ELECTRONIC DEVICES WITH WIDE BANDGAP SEMICONDUCTORS

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156406003837 ◽

2006 ◽

Vol 16 (02) ◽

pp. 545-556 ◽

Cited By ~ 3

Author(s):

BURAK OZPINECI ◽

MADHU SUDHAN CHINTHAVALI ◽

LEON M. TOLBERT

Keyword(s):

Silicon Carbide ◽

Field Strength ◽

Schottky Diodes ◽

Electronic Devices ◽

Wide Bandgap ◽

Power Electronic ◽

Different Temperatures ◽

Bandgap Semiconductors ◽

Switching Characteristics ◽

Unipolar Devices

Silicon carbide ( SiC ) unipolar devices have much higher breakdown voltages than silicon ( Si ) unipolar devices because of the ten times greater electric field strength of SiC compared with Si . 4H - SiC unipolar devices have higher switching speeds due to the higher bulk mobility of 4H - SiC compared to other polytypes. In this paper, four commercially available SiC Schottky diodes with different voltage and current ratings, VJFET, and MOSFET samples have been tested to characterize their performance at different temperatures ranging from -50°C to 175°C. Their forward characteristics and switching characteristics in this temperature range are presented. The characteristics of the SiC Schottky diodes are compared with those of a Si pn diode with comparable ratings.

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