scholarly journals Integrated Sustainability Analysis of Atomic Layer Deposition for Microelectronics Manufacturing

Author(s):  
Chris Y. Yuan ◽  
David A. Dornfeld

Atomic layer deposition (ALD) is a promising nanotechnology for wide applications in microelectronics manufacturing due to its ability to control layer growth at atomic scale. Sustainability of ALD technology needs to be quantitatively investigated in this early development stage to improve its economic and environmental performance. In this paper, we present an integrated sustainability analysis of ALD technology through material and energy flow analyses. The study is performed on the ALD of Al2O3 high-κ dielectric film through trimethylaluminum and water binary reactions. The precursor utilizations, methane emissions, and nanowaste generations from the ALD process are all quantitatively studied. Energy flow analysis demonstrates that the ALD process energy consumption is mainly determined by the ALD cycle time rather than the process temperature. Scale-up performance of the ALD technology is also studied for both emission generations and energy consumptions. Strategies and methods for improving the sustainability performance of the ALD technology are suggested based on the analysis.

Author(s):  
Jingwan Huo ◽  
Xiu Lin ◽  
Chris Yuan

Atomic layer deposition (ALD) is a key enabling nanotechnology for a broad array of applications due to its ability to grow conformal and pinhole-free thin films and control layer growth at atomic scale. Like many nanotechnologies, the potential amount of nano-particle emissions from ALD nano-manufacturing system is a significant concern for both occupational and public health exposure. Here we report our preliminary investigations of nano-particle emissions at end-of-the-pipe of ALD nano-manufacturing system. Scanning Mobility Particle Sizer (SMPS) spectrometer is used for the nano-particle measurement during the ALD process of Al2O3 high-k dielectric gate materials using Trimethyl Aluminum (TMA) and H2O binary reactions. Under various experimental conditions tested in our project, the results demonstrate that the aerosol nanoparticle emissions from ALD nano-manufacturing system are averaged with a mean diameter of 201.28 nm and 940,850 particle concentrations at 200 °C reaction temperature.


ChemPhysChem ◽  
2021 ◽  
Author(s):  
Dan Xu ◽  
Junqing Yin ◽  
Ya Gao ◽  
Di Zhu ◽  
Shuyuan Wang

Nanoscale ◽  
2017 ◽  
Vol 9 (32) ◽  
pp. 11410-11417 ◽  
Author(s):  
D. Zhang ◽  
M. J. Quayle ◽  
G. Petersson ◽  
J. R. van Ommen ◽  
S. Folestad

Few atomic surface layers via atomic layer deposition under near ambient conditions significantly altered dissolution and dispersion of pharmaceutical particles.


2021 ◽  
Author(s):  
Jerome W. F. Innocent ◽  
Mari Napari ◽  
Andrew L. Johnson ◽  
Thom R. Harris-Lee ◽  
Miriam Regue ◽  
...  

Here we report the development of a new scalable and transferable plasma assisted atomic layer deposition (PEALD) process for the production of uniform, conformal and pinhole free NiO with sub-nanometre control on a commercial ALD reactor.


Author(s):  
Oksana Yu. Gants ◽  
Vladimir M. Kashkin ◽  
Angelina D. Yudina ◽  
Valentina O. Zhirnova ◽  
Anna S. Timonina ◽  
...  

An approach to the synthesis of LiFePO4 and LiMn2O4 by atomic layer deposition is proposed and successfully implemented. The main regularities of the process are revealed and the method of synthesis realization is proposed. The following reagents were proposed and used: 2,2,6,6-tetramethylheptan-3,5 - dione of manganese, oxygen, iron (II) chloride, trimethyl phosphate, water and lithium tret-butylate. Nitrogen was used as an inert gas for purging the reactor and as a carrier gas. The influence of process parameters on the synthesis of thin films based on LiFePO4 and LiMn2O4 is described. It has been established that the phase composition of the resulting films is influenced by the time of precursor release and the process temperature. It is concluded that the increase in process temperature has a positive effect on the density of thin films of LiFePO4 and LiMn2O4. The optimum deposition temperature of LiFePO4 and LiMn2O4 is 400 ºC. It was shown that it is possible to regulate the content of each element and phase composition in films based on LiFePO4 and LiMn2O4 by changing the time of precursors release. The optimal time for the release of precursors for the synthesis of LiFePO4 and LiMn2O4 is 4 s under the stated conditions. Of great importance is the time of release of oxidizing agents-4 and 6 s for the deposition of LiFePO4 and LiMn2O4, respectively. The correlation of the layer growth rate per cycle was revealed, which was 0.2 nm/cycle for the synthesis of LiFePO4. The film obtained in the process is X-ray amorphous. To obtain the crystal structure, the films were annealed in argon at a temperature of 800 ºC. The mechanism of interaction of precursors with the substrate surface is studied. The influence of substrate activation on the uniformity of film growth is revealed.


2017 ◽  
Vol 29 (5) ◽  
pp. 2232-2238 ◽  
Author(s):  
Yucheng Zhang ◽  
Carlos Guerra-Nuñez ◽  
Ivo Utke ◽  
Johann Michler ◽  
Piyush Agrawal ◽  
...  

2016 ◽  
Vol 120 (5) ◽  
pp. 2628-2641 ◽  
Author(s):  
R. C. Longo ◽  
J. H. G. Owen ◽  
S. McDonnell ◽  
D. Dick ◽  
J. B. Ballard ◽  
...  

Materials ◽  
2018 ◽  
Vol 11 (8) ◽  
pp. 1426 ◽  
Author(s):  
Walter Giurlani ◽  
Andrea Giaccherini ◽  
Nicola Calisi ◽  
Giovanni Zangari ◽  
Emanuele Salvietti ◽  
...  

The Electrochemical Atomic Layer Deposition (E-ALD) technique is used for the deposition of ultrathin films of bismuth (Bi) compounds. Exploiting the E-ALD, it was possible to obtain highly controlled nanostructured depositions as needed, for the application of these materials for novel electronics (topological insulators), thermoelectrics and opto-electronics applications. Electrochemical studies have been conducted to determine the Underpotential Deposition (UPD) of Bi on selenium (Se) to obtain the Bi2Se3 compound on the Ag (111) electrode. Verifying the composition with X-ray Photoelectron Spectroscopy (XPS) showed that, after the first monolayer, the deposition of Se stopped. Thicker deposits were synthesized exploiting a time-controlled deposition of massive Se. We then investigated the optimal conditions to deposit a single monolayer of metallic Bi directly on the Ag.


Coatings ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 806
Author(s):  
Guang-Jie Yuan ◽  
Jie-Fei Xie ◽  
Hao-Hao Li ◽  
Hong-Liang Lu ◽  
Ying-Zhong Tian

Vertically aligned carbon nanotube arrays (VACNTs) have many excellent properties and show great potential for various applications. Recently, there has been a desire to grow VACNTs on nonplanar surfaces and synthesize core-sheath-structured VACNT–inorganic hybrids. To achieve this aim, atomic layer deposition (ALD) has been extensively applied, especially due to its atomic-scale thickness controllability and excellent conformality of films on three-dimensional (3D) structures with high aspect ratios. In this paper, the ALD of catalyst thin films for the growth of VACNTs, such as Co3O4, Al2O3, and Fe2O3, was first mentioned. After that, the ALD of thin films for the synthesis of VACNT–inorganic hybrids was also discussed. To highlight the importance of these hybrids, their potential applications in supercapacitors, solar cells, fuel cells, and sensors have also been reviewed.


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