Aero-Thermodynamic Consideration of Single-Crystal-Silicon Premixed-Fuel Microscale Can Combustor

Author(s):  
Moriaki Namura ◽  
Toshiyuki Toriyama

This paper describes the aero-thermodynamic design, microfabrication and combustion test results for a single-crystal-silicon premixed-fuel microscale can combustor. The combustion chamber volume is 277 mm3, and the microscale can combustor was fabricated by silicon bulk micromachining technology. Hydrogen fuel-air premixing was performed in the combustion test. The operation space in which stable combustion occurred was experimentally determined from the combustion temperature and efficiency for various mass flow rates and equivalence ratios. The expression for the combustion efficiency under conditions where the overall rate of heat release is limited by the chemical kinetics was consistent with the burning velocity model. The flame stabilization, the range of equivalence ratios and the maximum air velocity that the combustor can tolerate before flame extinction occurs were in agreement with the well - stirred reactor (WSR) and combustion loading parameter (CLP) models. A proposed aero-thermodynamic design approach based on these three models provides a physical interpretation of the experimental results in the operation space of stable combustion. Furthermore, this approach provides a unified physical interpretation of the stable combustion operation spaces of microscale combustors with various dimensions and configurations. Therefore, it is demonstrated that the proposed aero-thermodynamic approach has an important role in predicting the preliminary aerodynamic design performances of new microscale combustors.

2011 ◽  
Vol 18 (1) ◽  
pp. 25-30 ◽  
Author(s):  
Guoqiang Wu ◽  
Dehui Xu ◽  
Bin Xiong ◽  
Yuelin Wang

2013 ◽  
Vol 135 (8) ◽  
Author(s):  
Moriaki Namura ◽  
Toshiyuki Toriyama

In this paper, the design, microfabrication, and direct measurement of the static pressure distribution for the aerodynamics of a single-crystal-silicon microscale supersonic nozzle are described. The microscale supersonic nozzle has a convergent–divergent section and a throat area of 100μm × 300μm. The microscale supersonic nozzle was fabricated by silicon bulk micromachining technology. The degree of the rarefaction of nozzle flow was determined by the Knudsen number (Kn). The operation envelope that determines whether the continuum or rarefied flow assumption is appropriate can be expressed as a function of Kn and related parameters. The effect of nonadiabatic operation on microscale nozzle flow was investigated on the basis of wall heat transfer. These physical correlations were taken into account for the classical Shapiro's equations to analyze the microscale nozzle flow aerodynamics (Shapiro, 1953, The Dynamics and Thermodynamics of Compressible Fluid Flow, Ronald, New York, Chap. 7,8; Greitzer et al., 2006, Internal Flow, Cambridge University, Cambridge, UK, Chap. 2,10). Furthermore, the solutions of Shapiro's equations were compared with the experimental results by the authors and other research institutions in order to demonstrate the validity of the proposed aerodynamics design concept for microscale continuum flow.


Sensors ◽  
2017 ◽  
Vol 17 (7) ◽  
pp. 1507 ◽  
Author(s):  
Yuan Zhao ◽  
Qingrui Yang ◽  
Ye Chang ◽  
Wei Pang ◽  
Hao Zhang ◽  
...  

2008 ◽  
Vol 29 (7) ◽  
pp. 701-703 ◽  
Author(s):  
Joshua E.-Y. Lee ◽  
Behraad Bahreyni ◽  
Yong Zhu ◽  
Ashwin A. Seshia

Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.


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