Sol-Gel Coating Facilitating Si-to-Si Wafer Bonding at Low Temperature

2005 ◽  
Author(s):  
J. Wei ◽  
S. S. Deng ◽  
C. M. Tan
Keyword(s):  
Low Temperature ◽  
Bond Strength ◽  
Wafer Bonding ◽  
Intermediate Layer ◽  
Bonding Temperature ◽  
Sol Gel ◽  
Bond Quality ◽  
Bubble Generation ◽  
High Bond ◽  
High Bond Strength

Silicon-to-silicon wafer bonding by sol-gel intermediate layer has been performed using acid-catalyzed tetraethylthosilicate-ethanol-water sol solution. High bond strength near to the fracture strength of bulk silicon is obtained at low temperature, for example 100°C. However, The bond efficiency and bond strength of this intermediate layer bonding sharply decrease when the bonding temperature increases to elevated temperature, such as 300 °C. The degradation of bond quality is found to be related to the decomposition of residual organic species at elevated bonding temperature. The bubble generation and the mechanism of the high bond strength at low temperature are exploited.

Low Temperature Wafer Bonding Process Using Sol-Gel Intermediate Layer

2004 ◽  
Author(s):  
S. S. Deng ◽  
J. Wei ◽  
C. M. Tan ◽  
W. B. Yu ◽  
S. M. L. Nai ◽  
...  
Keyword(s):  
Low Temperature ◽  
Bond Strength ◽  
Silicon Wafer ◽  
Process Parameters ◽  
Wafer Bonding ◽  
Intermediate Layer ◽  
Bonding Temperature ◽  
Sol Gel ◽  
Dominant Factor ◽  
Bond Quality

Silicon-to-silicon wafer bonding has been successful prepared using sol-gel intermediate layer, which is deposited by spinning acid catalyzed tetraethylthosilicate (TEOS) solution on both two silicon wafer surfaces. To investigate the effects of the process parameters, Draper-Lin small composite design is used, as it requires the minimum runs in the design of experiments. Four process parameters, bonding temperature, solution PH value, solution concentration and solution aging time, have been considered to influence the bond quality, including bond efficiency and bond strength. The bond efficiency is in the range of 40%–90% and bond strength is up to 35 MPa. Statistic analysis shows that the bonding temperature is the dominant factor for the bond quality, while the interaction between temperature and concentration is significant on bond strength. Various characterization techniques, including differential thermal analysis (DTA), atomic force microscopy (AFM), scanning electron microscope (SEM), contact angle measurement and ellipsometry, have been used to study the surface and interface properties. The residual organic species inside the sol-gel coating may be the origin of the significant effect of bonding temperature on the bond efficiency. The interaction effect on bond strength is attributed to the surface hydrophilicity and porosity of sol-gel coating. Higher concentration solution can form lower hydrophilic wafer surface, which results in lower bond strength when bonding temperature is at low level. Whereas, at high bonding temperatures, the increase of porosity of the sol-gel coating prepared by higher sol concentration can absorb more undesired hydrocarbon gas molecules and lead to higher bond strength. The bonding mechanism for the low temperature sol-gel intermediate layer bonding technique is related to the smooth coating surface, porous intermediate layer and water-absent bonding groups.

Low-temperature sol–gel intermediate layer wafer bonding

2006 ◽  
Vol 496 (2) ◽  
pp. 560-565 ◽  
Author(s):  
S.S. Deng ◽  
C.M. Tan ◽  
J. Wei ◽  
W.B. Yu ◽  
S.M.L. Nai ◽  
...  
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Intermediate Layer ◽  
Sol Gel

Mechanism of sol–gel intermediate layer low temperature wafer bonding

2005 ◽  
Vol 38 (8) ◽  
pp. 1308-1312 ◽  
Author(s):  
C M Tan ◽  
S S Deng ◽  
J Wei ◽  
W B Yu
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Intermediate Layer ◽  
Sol Gel

Low Temperature Wafer Level Bonding Using Benzocyclobutene Adhesive Polymers

2012 ◽  
Vol 2012 (DPC) ◽  
pp. 1-24
Author(s):  
Michael Gallagher ◽  
Jong-Uk Kim ◽  
Eric Huenger ◽  
Kai Zoschke ◽  
Christina Lopper ◽  
...  
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Flip Chip ◽  
Bonding Temperature ◽  
Bonding Process ◽  
Curing Temperature ◽  
Wafer Level ◽  
Mechanical Adhesion ◽  
3D Stacking ◽  
Dry Etch

3D stacking, one of the 3D integration technologies using through silicon vias (TSVs), is considered as a desirable 3D solution due to its cost effectiveness and matured technical background. For successful 3D stacking, precisely controlled bonding of the two substrates is necessary, so that various methods and materials have been developed over the last decade. Wafer bonding using polymeric adhesives has advantages. Surface roughness, which is critical in direct bonding and metal-to-metal bonding, is not a significant issue, as the organic adhesive can smooth out the unevenness during bonding process. Moreover, bonding of good quality can be obtained using relatively low bonding pressure and low bonding temperature. Benzocyclobutene (BCB) polymers have been commonly used as bonding adhesives due to their relatively low curing temperature (~250 °C), very low water uptake (<0.2%), excellent planarizing capability, and good affinity to Cu metal lines. In this study, we present wafer bonding with BCB at various conditions. In particular, bonding experiments are performed at low temperature range (180 °C ~ 210 °C), which results in partially cured state. In order to examine the effectiveness of the low temperature process, the mechanical (adhesion) strength and dimensional changes are measured after bonding, and compared with the values of the fully cured state. Two different BCB polymers, dry-etch type and photo type, are examined. Dry etch BCB is proper for full-area bonding, as it has low degree of cure and therefore less viscosity. Photo-BCB has advantages when a pattern (frame or via open) is to be structured on the film, since it is photoimageable (negative tone), and its moderate viscosity enables the film to sustain the patterns during the wafer bonding process. The effect of edge beads at the wafer rim area and the soft cure (before bonding) conditions on the bonding quality are also studied. Alan/Rey ok move from Flip Chip and Wafer Level Packaging 1-6-12.

Bonding of Polyethylene to Metals and Rubber with Hydrogenated Polybutadiene

1962 ◽  
Vol 35 (4) ◽  
pp. 1060-1062
Author(s):  
A. I. Yakubchik ◽  
S. Ya Grilikhes ◽  
B. I. Tikhomirov ◽  
V. S. Purlova
Keyword(s):  
Bond Strength ◽  
Adhesive Composition ◽  
High Bond ◽  
High Bond Strength ◽  
Hydrogenated Polybutadiene

Abstract The adhesive composition based on hydrogenated unbranched 1,4-polybutadiene gives a high bond strength between polyethylene and brass, and brass-plated metal, and rubber.

scholarly journals Numerical Analysis for the Progressive Failure of Binary-Medium Interface under Shearing

2018 ◽  
Vol 2018 ◽  
pp. 1-11 ◽  
Author(s):  
Rihong Cao ◽  
Wenyu Tang ◽  
Hang Lin ◽  
Xiang Fan
Keyword(s):  
Shear Strength ◽  
Bond Strength ◽  
Normal Stress ◽  
Strength Ratio ◽  
Normal Stresses ◽  
Stress Increase ◽  
Tensile Cracks ◽  
Medium Interface ◽  
High Bond ◽  
High Bond Strength

Binary-medium specimens were fabricated using the particle flow code, and the shear strength, dilatancy, and failure behavior of the binary-medium specimens with different bond strength ratios (0.25, 0.5, 0.75, and 1.0) under different normal stresses were studied. Numerical results show that the bond strength ratio and normal stresses considerably influence the shear strengths of binary-medium interface. Shear strength increases as the bond strength ratio and normal stress increase. The dilation of interfaces with high bond strength ratios is more evident than those of interfaces with lower bond strength ratios, and the curves for the high bond strength ratio exhibit remarkable fluctuations during the residual stage. At increased normal stress and bond strength ratio, the peak dilation angle shows decreasing and increasing trends successively. In this study, the specimens exhibited three kinds of failure modes. In mode II, the sawtooth experienced shear failure, but some tensile cracks appeared on the interface of the binary-medium. In mode III, no sawtooth was cut off, indicating tensile failure on the interface. At a low bond strength ratio, damage or failure is mostly concentrated in the upper part of the model. Failure parts gradually transfer to the lower part of the model when the bond strength ratio and normal stress increase. Furthermore, evident tensile cracks occur on the interface. When the bond strength ratio reaches 1.0, the failure mode of the specimen gradually transforms from sheared-off failure to chip-off failure. The number of microcracks in the specimens indicates that the lower the bond strength ratio, the more severe the damage on the specimens.

scholarly journals Research on the Properties of High-strength Gypsum Based Tile Adhesive in Interior Decoration

2020 ◽  
Vol 165 ◽  
pp. 05015
Author(s):  
Ji Xiu Zhang ◽  
Ye Zhang ◽  
Ji Kang Liu ◽  
Yuan Chao Miao ◽  
Sai Hong Duan
Keyword(s):  
Bond Strength ◽  
Dimensional Stability ◽  
High Strength ◽  
High Dimensional ◽  
Strength Development ◽  
Interior Decoration ◽  
High Bond ◽  
High Bond Strength ◽  
Early Strength ◽  
Interface Treatment

In this paper, a new early strength tile adhesive is prepared by using α- high strength gypsum and its properties are discussed. The research methods refer to relevant Chinese standards. The results show that the tensile bond strength of the adhesive can reach 0.6 MPa in one day and 1.5 MPa in 7 days, which is close to 80% of 28-day strength. It is indicating that the adhesive has high bond strength, rapid strength development, and high dimensional stability. It effectively solves the problems that the traditional cement-based tile adhesive is prone to hollowing, falling off, and cracking. Additionally, no interface treatment is required during the using process of this gypsum-based adhesive.

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