Validation of a Unified Nondiffusive-Diffusive Phonon Transport Model for Nanoscale Heat Transfer Simulations

Author(s):  
Ashok T. Ramu ◽  
Yanbao Ma

Heat transfer in the vicinity of nanoscale hot-spots is qualitatively different from that in the macroscale, which effect stems from the breakdown of Fourier law due to phonon nondiffusive transport. In this work, we validate a recently proposed alternative, high-fidelity phonon transport model, the unified nondiffusive-diffusive (UND) model, which takes into account the mixed ballistic-diffusive nature of heat transport, as well as reduces to the Fourier law as a limiting case. In the UND model, the nondiffusive phonons are treated using the Boltzmann transport equation, while the diffusive phonon gas is treated by the Fourier law. The numerical results of Maznev et al. for the geometry and spatial dependence of variables corresponding to the transient gratings experiments of Johnson et al. are used for validation of the model.

2009 ◽  
Vol 1229 ◽  
Author(s):  
Thomas W Brown ◽  
Edward Hensel

AbstractThermal transport in crystalline materials at various length scales can be modeled by the Boltzmann transport equation (BTE). A statistical phonon transport (SPT) model is presented that solves the BTE in a statistical framework that incorporates a unique state-based phonon transport methodology. Anisotropy of the first Brillouin zone (BZ) is captured by utilizing directionally-dependent dispersion curves obtained from lattice dynamics calculations. A rigorous implementation of phonon energy and pseudo-momentum conservation is implemented in the ballistic thermal transport regime for a homogeneous silicon nanowire with adiabatic specular boundary conditions.


2016 ◽  
Vol 139 (3) ◽  
Author(s):  
Ashok T. Ramu ◽  
John E. Bowers

A generalized enhanced Fourier law (EFL) that accounts for quasi-ballistic phonon transport effects in a formulation entirely in terms of physical observables is derived from the Boltzmann transport equation. It generalizes the previously reported EFL from a gray phonon population to an arbitrary quasi-ballistic phonon mode population, the chief advantage being its formulation in terms of observables like the heat flux and temperature, in a manner akin to the Fourier law albeit rigorous enough to describe quasi-ballistic phonon transport.


Author(s):  
Basil T. Wong ◽  
M. Pinar Mengu¨c¸

In this work, electronic thermal conduction in thin gold film is modeled via the Boltzmann Transport Equation (BTE). The BTE is solved using a Monte Carlo Method (MCM). Temperature profiles for various film thicknesses are computed. Results show that the electronic thermal transport in gold is still diffusion-like at film thicknesses as small as 100 nm, implying that the Fourier law of conduction can be applied at this scale to predict the steady-state thermal heat transfer without comprising the physics. However, the Fourier law does not predict the temperature profiles accurately if the film thickness is reduced to 10 nm or below.


2009 ◽  
Vol 1172 ◽  
Author(s):  
Zhen Huang ◽  
Dhruv Singh ◽  
Jayathi Murthy ◽  
Timothy Fisher

AbstractThe Boltzmann transport equation (BTE) had been successfully used to predict phonon transport in semiconductors including silicon and germanium. However, in a composite system, the method requires external inputs to include accurate boundary conditions at internal interfaces. The atomistic Green's function (AGF) method is particularly useful for addressing interfacial heat transfer problems. In this paper, phonon transmission functions derived using the AGF method are incorporated in a non-gray BTE calculation of phonon transport in a relaxation time approximation. A Landauer-type heat flux is computed at the interface using the transmission function and the lattice temperatures on either side of the interface to compute distribution functions. The formulation is applied to a Si/Ge interface and the dependence of the effective thermal conductivity of the composite medium is investigated as a function of domain length.


2018 ◽  
Vol 777 ◽  
pp. 421-425 ◽  
Author(s):  
Chhengrot Sion ◽  
Chung Hao Hsu

Many methods have been developed to predict the thermal conductivity of the material. Heat transport is complex and it contains many unknown variables, which makes the thermal conductivity hard to define. The iterative solution of Boltzmann transport equation (BTE) can make the numerical calculation and the nanoscale study of heat transfer possible. Here, we review how to apply the iterative method to solve BTE and many linear systems. This method can compute a sequence of progressively accurate iteration to approximate the solution of BTE.


2012 ◽  
Vol 26 (17) ◽  
pp. 1250104 ◽  
Author(s):  
B. S. YILBAS ◽  
S. BIN MANSOOR

Phonon transport in two-dimensional silicon and aluminum films is investigated. The frequency dependent solution of Boltzmann transport equation is obtained numerically to account for the acoustic and optical phonon branches. The influence of film size on equivalent equilibrium temperature distribution in silicon and aluminum films is presented. It is found that increasing film width influences phonon transport in the film; in which case, the difference between the equivalent equilibrium temperature due to silicon and diamond films becomes smaller for wider films than that of the thinner films.


Author(s):  
Keivan Etessam-Yazdani ◽  
Sadegh M. Sadeghipour ◽  
Mehdi Asheghi

The performance and reliability of sub-micron semiconductor transistors demands accurate modeling of electron and phonon transport at nanoscales. The continued downscaling of the critical dimensions, introduces hotspots, inside transistors, with dimensions much smaller than phonon mean free path. This phenomenon, known as localized heating effect, results in a relatively high temperature at the hotspot that cannot be predicted using heat diffusion equation. While the contribution of the localized heating effect to the total device thermal resistance is significant during the normal operation of transistors, it has even greater implications for the thermoelectrical behavior of the device during an electrostatic discharge (ESD) event. The Boltzmann transport equation (BTE) can be used to capture the ballistic phonon transport in the vicinity of a hot spot but many of the existing solutions are limited to the one-dimensional and simple geometry configurations. We report our initial progress in solving the two dimensional Boltzmann transport equation for a hot spot in an infinite media (silicon) with constant temperature boundary condition and uniform heat generation configuration.


Sign in / Sign up

Export Citation Format

Share Document