Integrated Vapor Chamber Heat Spreader for Power Module Applications

Author(s):  
Clayton L. Hose ◽  
Dimeji Ibitayo ◽  
Lauren M. Boteler ◽  
Jens Weyant ◽  
Bradley Richard

This work presents a demonstration of a coefficient of thermal expansion (CTE) matched, high heat flux vapor chamber directly integrated onto the backside of a direct bond copper (DBC) substrate to improve heat spreading and reduce thermal resistance of power electronics modules. Typical vapor chambers are designed to operate at heat fluxes > 25 W/cm2 with overall thermal resistances < 0.20 °C/W. Due to the rising demands for increased thermal performance in high power electronics modules, this vapor chamber has been designed as a passive, drop-in replacement for a standard heat spreader. In order to operate with device heat fluxes >500 W/cm2 while maintaining low thermal resistance, a planar vapor chamber is positioned onto the backside of the power substrate, which incorporates a specially designed wick directly beneath the active heat dissipating components to balance liquid return and vapor mass flow. In addition to the high heat flux capability, the vapor chamber is designed to be CTE matched to reduce thermally induced stresses. Modeling results showed effective thermal conductivities of up to 950 W/m-K, which is 5 times better than standard copper-molybdenum (CuMo) heat spreaders. Experimental results show a 43°C reduction in device temperature compared to a standard solid CuMo heat spreader at a heat flux of 520 W/cm2.

2021 ◽  
Vol 143 (3) ◽  
Author(s):  
Fabio Battaglia ◽  
Farah Singer ◽  
David C. Deisenroth ◽  
Michael M. Ohadi

Abstract In this paper, we present the results of an experimental study involving low thermal resistance cooling of high heat flux power electronics in a forced convection mode, as well as in a thermosiphon (buoyancy-driven) mode. The force-fed manifold microchannel cooling concept was utilized to substantially improve the cooling performance. In our design, the heat sink was integrated with the simulated heat source, through a single solder layer and substrate, thus reducing the total thermal resistance. The system was characterized and tested experimentally in two different configurations: the passive (buoyancy-driven) loop and the forced convection loop. Parametric studies were conducted to examine the role of different controlling parameters. It was demonstrated that the thermosiphon loop can handle heat fluxes in excess of 200 W/cm2 with a cooling thermal resistance of 0.225 (K cm2)/W for the novel cooling concept and moderate fluctuations in temperature. In the forced convection mode, a more uniform temperature distribution was achieved, while the heat removal performance was also substantially enhanced, with a corresponding heat flux capacity of up to 500 W/cm2 and a thermal resistance of 0.125 (K cm2)/W. A detailed characterization leading to these significant results, a comparison between the performance between the two configurations, and a flow visualization in both configurations are discussed in this paper.


Author(s):  
David H. Altman ◽  
Joseph R. Wasniewski ◽  
Mark T. North ◽  
Sungwon S. Kim ◽  
Timothy S. Fisher

Spreading of high-flux electronics heat is a critical part of any packaging design. This need is particularly profound in advanced devices where the dissipated heat fluxes have been driven well over 100W/cm2. To address this challenge, researchers at Raytheon, Thermacore and Purdue are engaged in the development and characterization of a low resistance, coefficient of thermal expansion (CTE)-matched multi-chip vapor chamber heat spreader, which utilizes capillary driven two-phase heat transport. The vapor chamber technology under development overcomes the limitations of state-of-the-art approaches by combining scaled-down sintered Cu powder and nanostructured materials in the vapor chamber wick to achieve low thermal resistance. Cu-coated vertically aligned carbon nanotubes is the nanostructure of choice in this development. Unique design and construction techniques are employed to achieve CTE-matching with a variety of device and packaging materials in a low-profile form-factor. This paper describes the materials, design, construction and characterization of these vapor chambers. Results from experiments conducted using a unique high-heat flux capable 1DSS test facility are presented, exploring the effects of various microscopic wick configurations, CNT-functionalizations and fluid charges on thermal performance. The impacts of evaporator wick patterning, CNT evaporator functionalization and CNT condenser functionalization on performance are assessed and compared to monolithic Cu wick configurations. Thermal performance is explained as a function of applied heat flux and temperature through the identification of dominant component thermal resistances and heat transfer mechanisms. Finally, thermal performance results are compared to an equivalent solid conductor heat spreader, demonstrating a >40% reduction in thermal resistance. These results indicate great promise for the use of such novel vapor chamber technology in thickness-constrained high heat flux device packaging applications.


Author(s):  
Yuan Zhao ◽  
Chung-Lung Chen

This paper introduces a high performance vapor chamber heat spreader with a novel bi-dispersed wick structure. The main wick structure is a sintered porous network in a latticed pattern, which contains not only small pores to transport liquid by capillary forces, but also many slots to provide large passages to vent vapor from heated surfaces. The copper particles have a diameter of approximately 50 μm; they produce an effective pore radius of approximately 13 μm after sintering. The slots have a typical width of approximately 500 μm. Unlike traditional bi-dispersed wick structures, the latticed wick structures provide undisrupted liquid delivery passages and vapor escape channels and thus greatly improve the heat transfer performance. Preliminary experimental tests were conducted and the results were analyzed. It was shown by the experiments that vapor chamber heat spreaders with the latticed wicks present three times improvement on heat spreading performance, comparing with a solid copper heat spreader, and much improved capacity to handle hot spots with local heat fluxes exceeding 300 W/cm2, which will have great impacts on extending heat pipe technology from traditional low to medium heat fluxes to high heat flux applications.


Author(s):  
Mitsuo Hashimoto ◽  
Hiroto Kasai ◽  
Kazuma Usami ◽  
Hiroyuki Ryoson ◽  
Kazuaki Yazawa ◽  
...  

A two-phase heat spreader has been developed for cooling high heat flux sources in high-power lasers, high-intensity light-emitting diodes, and semiconductor power devices. The heat spreader targets the passive cooling of heat sources with fluxes greater than 5 W/mm2 without requiring any active power consumption for the thermal solution. The prototype vapor chamber consists of an evaporator plate, a condenser plate and an adiabatic section, with water as the phase-change fluid. The custom-designed high heat flux source is composed of a platinum resistive heating pattern and a temperature sensor on an aluminum nitride substrate which is soldered to the outside of the evaporator. Experiments were performed with several different microstructures as evaporator surfaces under varying heat loads. The first microstructure investigated, a screen mesh, dissipated 2 W/mm2 of heat load but with an unacceptably high evaporator temperature. A sintered copper powder microstructure with particles of 50 μm mean diameter supported 8.5 W/mm2 without dryout. Four sets of particle diameters and different thicknesses for the sintered copper powder evaporators were tested. Additionally, some of the sintered structures were coated with multi-walled carbon nanotubes (CNT) that were rendered hydrophilic. Such nano-structured evaporators successfully showed a further reduction in thermal resistance of the vapor chamber.


Author(s):  
Yasuhisa Shinmoto ◽  
Shinichi Miura ◽  
Koichi Suzuki ◽  
Yoshiyuki Abe ◽  
Haruhiko Ohta

Recent development in electronic devices with increased heat dissipation requires severe cooling conditions and an efficient method for heat removal is needed for the cooling under high heat flux conditions. Most researches are concentrated on small semiconductors with high heat flux density, while almost no existing researches concerning the cooling of a large semiconductor, i.e. power electronics, with high heat generation density from a large cooling area. A narrow channel between parallel plates is one of ideal structures for the application of boiling phenomena which uses the cooling for such large semiconductors. To develop high-performance cooling systems for power electronics, experiments on increase in critical heat flux (CHF) for flow boiling in narrow channels by improved liquid supply was conducted. To realize the cooling of large areas at extremely high heat flux under the conditions for a minimum gap size and a minimum flow rate of liquid supplied, the structure with auxiliary liquid supply was devised to prevent the extension of dry-patches underneath flattened bubbles generated in a narrow channel. The heating surface was experimented in two channels with different dimensions. The heating surfaces have the width of 30mm and the lengths of 50mm and 150mm in the flow direction. A large width of actual power electronics is realizable by the parallel installation of the same channel structure in the transverse direction. The cooling liquid is additionally supplied via sintered metal plates from the auxiliary unheated channels located at sides or behind the main heated channel. To supply the liquid to the entire heating surface, fine grooves are machined on the heating surface for enhance the spontaneous liquid supply by the aid of capillary force. The gap size of narrow channels are varied as 0.7mm, 2mm and 5mm. Distribution of liquid flow rate to the main heated channel and the auxiliary unheated channels were varied to investigate its effect on the critical heat flux. Test liquids employed are R113, FC72 and water. The systematic experiments by using water as a test liquid were conducted. Critical heat flux values larger than 2×106W/m2 were obtained at both gap sizes of 2mm and 5mm for a heated length of 150mm. A very high heat transfer coefficient as much as 1×105W/m2K was obtained at very high heat flux near CHF for the gap size of 2mm. This paper is a summary of experimental results obtained in the past by the present authors.


Author(s):  
Jensen Hoke ◽  
Todd Bandhauer ◽  
Jack Kotovsky ◽  
Julie Hamilton ◽  
Paul Fontejon

Liquid-vapor phase change heat transfer in microchannels offers a number of significant advantages for thermal management of high heat flux laser diodes, including reduced flow rates and near constant temperature heat rejection. Modern laser diode bars can produce waste heat loads >1 kW cm−2, and prior studies show that microchannel flow boiling heat transfer at these heat fluxes is possible in very compact heat exchanger geometries. This paper describes further performance improvements through area enhancement of microchannels using a pyramid etching scheme that increases heat transfer area by ∼40% over straight walled channels, which works to promote heat spreading and suppress dry-out phenomenon when exposed to high heat fluxes. The device is constructed from a reactive ion etched silicon wafer bonded to borosilicate to allow flow visualization. The silicon layer is etched to contain an inlet and outlet manifold and a plurality of 40μm wide, 200μm deep, 2mm long channels separated by 40μm wide fins. 15μm wide 150μm long restrictions are placed at the inlet of each channel to promote uniform flow rate in each channel as well as flow stability in each channel. In the area enhanced parts either a 3μm or 6μm sawtooth pattern was etched vertically into the walls, which were also scalloped along the flow path with the a 3μm periodicity. The experimental results showed that the 6μm area-enhanced device increased the average maximum heat flux at the heater to 1.26 kW cm2 using R134a, which compares favorably to a maximum of 0.95 kw cm2 dissipated by the plain walled test section. The 3μm area enhanced test sections, which dissipated a maximum of 1.02 kW cm2 showed only a modest increase in performance over the plain walled test sections. Both area enhancement schemes delayed the onset of critical heat flux to higher heat inputs.


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