A Dynamic Response of a Module/Array Simulator Using I-V Magnifier Circuit of a PN Photo-Sensor

Solar Energy ◽  
2003 ◽  
Author(s):  
Hiroshi Nagayoshi
Keyword(s):  
Dynamic Response ◽  
Personal Computer ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Maximum Power ◽  
Current Gain ◽  
Led Driver ◽  
Photo Sensor ◽  
Driver Circuit ◽  
Basic Characteristics

Basic characteristics and dynamic response of a 30W module/array simulator using PV I-V magnifier circuit was studied. It was confirmed that each gain of voltage and current was independently adjustable using feedback control of current signal. Simulator circuit output power is controlled by LED irradiation light which works as an irradiation of sun light to real PV modules. Maximum power of the circuit depends on maximum power of the power amplifier used in the circuit. A photo-current of pn photo-sensor was some micro ampere hence the current gain of the simulator needed more than 50dB. The voltage gain was not more than 3dB because a multi junction pn photo-sensor was used. To control the simulator circuit by personal computer, an LED driver circuit was added. A fill factor was also easily changeable by change of shunt resistor connected with pn photo-sensor in parallel. A dynamic response of short circuit current was measured and confirmed that the circuit has enough response ability to apply the MPPT evaluation. A grand line of each module is isolated, hence any topology of connections is available. This circuit simplifies the control system and makes it easy to handle multi simulator units by one personal computer. This system is suitable for the evaluation of multi inverter system.

scholarly journals Closed-Surface Multifunctional Antireflective Coating Made from SiO2 with TiO2 Nanocomposites

Materials ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1367
Author(s):  
Zhiqiu Guo ◽  
Ze Zhu ◽  
Ya Liu ◽  
Changjun Wu ◽  
Hao Tu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Short Circuit ◽  
Sol Gel ◽  
Short Circuit Current ◽  
Closed Surface ◽  
Chain Structure ◽  
High Photocatalytic Activity ◽  
Current Gain ◽  
Antireflective Coating ◽  
Reliability And Robustness

An SiO2-TiO2 closed-surface antireflective coating was fabricated by the one-dipping method. TiO2 nanoparticles were mixed with a nanocomposited silica sol, which was composed of acid-catalyzed nanosilica networks and silica hollow nanospheres (HNs). The microstructure of the sol-gel was characterized by transmission electron microscopy. The silica HNs were approximately 40–50 nm in diameter with a shell thickness of approximately 8–10 nm. The branched-chain structure resulting from acidic hydrolysis grew on these silica HNs, and TiO2 was distributed inside this network. The surface morphology of the coating was measured by field emission scanning electron microscopy and atomic force microscopy. After optimization, transmittance of up to 94.03% was obtained on photovoltaic (PV) glass with a single side coated by this antireflective coating, whose refractive index was around 1.30. The short-circuit current gain of PV module was around 2.14–2.32%, as shown by the current-voltage (IV) curve measurements and external quantum efficiency (EQE) tests. This thin film also exhibited high photocatalytic activity. Due to the lack of voids on its surface, the antireflective coating in this study possessed excellent long-term reliability and robustness in both high-moisture and high-temperature environments. Combined with its self-cleaning function, this antireflective coating has great potential to be implemented in windows and photovoltaic modules.

scholarly journals A New Study on the Temperature and Bias Dependence of the Kink Effects in S22 and h21 for the GaN HEMT Technology

Electronics ◽  
2018 ◽  
Vol 7 (12) ◽  
pp. 353 ◽  
Author(s):  
Giovanni Crupi ◽  
Antonio Raffo ◽  
Valeria Vadalà ◽  
Giorgio Vannini ◽  
Alina Caddemi
Keyword(s):  
Short Circuit ◽  
Equivalent Circuit Model ◽  
Short Circuit Current ◽  
High Electron Mobility Transistor ◽  
Current Gain ◽  
Device Performance ◽  
High Electron ◽  
Gan Hemt ◽  
Temperature Conditions ◽  
Conventional Instrumentation

The aim of this feature article is to provide a deep insight into the origin of the kink effects affecting the output reflection coefficient (S22) and the short-circuit current-gain (h21) of solid-state electronic devices. To gain a clear and comprehensive understanding of how these anomalous phenomena impact device performance, the kink effects in S22 and h21 are thoroughly analyzed over a broad range of bias and temperature conditions. The analysis is accomplished using high-frequency scattering (S-) parameters measured on a gallium-nitride (GaN) high electron-mobility transistor (HEMT). The experiments show that the kink effects might become more or less severe depending on the bias and temperature conditions. By using a GaN HEMT equivalent-circuit model, the experimental results are analyzed and interpreted in terms of the circuit elements to investigate the origin of the kink effects and their dependence on the operating condition. This empirical analysis provides valuable information, simply achievable by conventional instrumentation, that can be used not only by GaN foundries to optimize the technology processes and, as a consequence, device performance, but also by designers that need to face out with the pronounced kink effects of this amazing technology.

scholarly journals Real-Time Experimental Assessment of a New MPPT Algorithm Based on the Direct Detection of the Short-Circuit Current for a PV System

2021 ◽  
Vol 19 ◽  
pp. 598-603 ◽  
Author(s):  
C.B. Nzoundja Fapi ◽  
◽  
P. Wira ◽  
M. Kamta ◽  
Keyword(s):  
Fuzzy Logic Controller ◽  
Direct Detection ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Maximum Power ◽  
Solar Irradiation ◽  
Pv System ◽  
Maximum Power Point ◽  
Pv Panel ◽  
Power Point

To substantially increase the efficiency of photovoltaic (PV) systems, it is important that the Maximum Power Point Tracking (MPPT) system has an output close to 100%.This process is handled by MPPT algorithms such as Fractional Open-Circuit Voltage (FOCV), Perturb and Observe (P&O), Fractional Short-Circuit Current (FSCC), Incremental Conductance (INC), Fuzzy Logic Controller (FLC) and Neural Network (NN) controllers. The FSCC algorithm is simple to be implemented and uses only one current sensor. This method is based on the unique existence of the linear approximation between the Maximum Power Point (MPP) current and the short-circuit current in standard conditions. The speed of this MPPT optimization technic is fast, however this algorithm needs to short-circuit the PV panel each time in order to obtain the short circuit current. This process leads to energy losses and high oscillations. In order to improve the FSCC algorithm, we propose a method based on the direct detection of the shortcircuit current by simply reading the output current of the PV panel. This value allows directly calculating the short circuit current by incrementing or decrementing the solar irradiation. Experimental results show time response attenuation, little oscillations, power losses reduction and better MPPT accuracy of the enhanced algorithm compared to the conventional FSCC method.

Testing and Analysis of Dynamic Response of a High-Voltage Substation Structure to Short-Circuit Current Forces

2018 ◽  
Vol 33 (5) ◽  
pp. 2097-2105 ◽  
Author(s):  
Ian Hodgson ◽  
Andrew V. Zorn ◽  
Richard Sause ◽  
Ebrahim Tahmasebi ◽  
David Birrell ◽  
...  
Keyword(s):  
Dynamic Response ◽  
High Voltage ◽  
Short Circuit ◽  
Short Circuit Current

scholarly journals Modélisation et commande d’un panneau photovoltaïque dans l’environnement PSIM

2019 ◽  
Author(s):  
Saad Motahhir ◽  
Abdelaziz El Ghzizal ◽  
Aziz Derouich
Keyword(s):  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Maximum Power ◽  
Physical Parameters ◽  
Maximum Power Point ◽  
Shunt Resistance ◽  
Photovoltaic Panel ◽  
Current Voltage ◽  
Power Point

The objective of this work is to make a model of photovoltaic cells (PV) dedicated to teaching renewable energy using PSIM software. This model is based on ratings provided by the manufacturer as: open circuit voltage, short circuit current, voltage and current corresponding to the maximum power point. So the resulting model has a better approach and takes into account the influence of different physical parameters including temperature, irradiation, series resistance, shunt resistance and saturation current of the diode. After a general presentation of the photovoltaic conversion chain, the article details, at first, the modeling of a photovoltaic panel. Secondly, we focus on the implementation of a MPPT command for controlling the DC / DC to operate the PV array at maximum power (MPP).

scholarly journals Photovoltaic Cell and Module I-V Characteristic Approximation Using Bézier Curves

2018 ◽  
Author(s):  
Roland Szabo ◽  
Aurel Gontean
Keyword(s):  
Short Circuit ◽  
Short Circuit Current ◽  
Photovoltaic Cell ◽  
Open Circuit ◽  
Maximum Power ◽  
Shunt Resistance ◽  
First Case ◽  
Novel Approach ◽  
Pv Cell ◽  
Different Temperatures

The aim of this work is to introduce new ways to model the I-V characteristic of a PV cell or PV module using straight lines and Bézier curves. This is a complete novel approach, Bézier curves being previously used mainly for computer graphics. The I-V characteristic is divided in three sections, modeled with lines and a quadratic Bézier curve in the first case and with three cubic Bézier curves in the second case. The result proves to be accurate and relies on the fundamental points usually present in the PV cell datasheets: Voc (the open circuit voltage), Isc (the short circuit current), Vmp (the maximum power corresponding voltage) and Imp (the maximum power corresponding current) and the parasitic resistances Rsh0 (shunt resistance at Isc) and Rs0 (series resistance at Voc). The proposed algorithm completely defines all the implied control points and the error is analyzed. The proposed method is validated for different temperatures and irradiances. The model is finally compared and validated using the least squares fitting method.

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